Contacting mode atomic force microscopy (AFM) is used to measure the In 0.35 Ga 0.65 As/GaAs epilayer grown at low temperature (460℃).Unlike the normal layer by layer growth (FvdM mode) or self organized i...Contacting mode atomic force microscopy (AFM) is used to measure the In 0.35 Ga 0.65 As/GaAs epilayer grown at low temperature (460℃).Unlike the normal layer by layer growth (FvdM mode) or self organized islands growth (SK mode),samples grown under 460℃ are found to be large islands with atomic thick terraces.AFM measurements reveale near one monolayer high steps.This kind of growth is good between FvdM and SK growth modes and can be used to understand the evolution of strained epitaxy from FvdM to SK mode.展开更多
The dark current of In_(0.47) Ga_(0.53) As/InP heterojunction photodiodes (HPDs) was analysed. We found that there exists a new dark current component──deep level-assisted tunnelling current.DLTS was used to measure...The dark current of In_(0.47) Ga_(0.53) As/InP heterojunction photodiodes (HPDs) was analysed. We found that there exists a new dark current component──deep level-assisted tunnelling current.DLTS was used to measure the In_(0.47)Ga_(0.53)As/InP HPDs. An electronic trap which has a thermal activation energy of O.44 eV, level concentration of 3.10×10￣(13)cm￣(-3) and electronic capture cross section of 1.72×10￣(12)cm￣2 has been found.It's existence results in the new tunnelling current.展开更多
文摘Contacting mode atomic force microscopy (AFM) is used to measure the In 0.35 Ga 0.65 As/GaAs epilayer grown at low temperature (460℃).Unlike the normal layer by layer growth (FvdM mode) or self organized islands growth (SK mode),samples grown under 460℃ are found to be large islands with atomic thick terraces.AFM measurements reveale near one monolayer high steps.This kind of growth is good between FvdM and SK growth modes and can be used to understand the evolution of strained epitaxy from FvdM to SK mode.
文摘The dark current of In_(0.47) Ga_(0.53) As/InP heterojunction photodiodes (HPDs) was analysed. We found that there exists a new dark current component──deep level-assisted tunnelling current.DLTS was used to measure the In_(0.47)Ga_(0.53)As/InP HPDs. An electronic trap which has a thermal activation energy of O.44 eV, level concentration of 3.10×10￣(13)cm￣(-3) and electronic capture cross section of 1.72×10￣(12)cm￣2 has been found.It's existence results in the new tunnelling current.
