Inspired by the increasing demand for energy-storage capacitors in electrical and electronic systems, dielectrics with high energy-storage performance have attracted more and more attention. AgNbO_(3) -based lead-free...Inspired by the increasing demand for energy-storage capacitors in electrical and electronic systems, dielectrics with high energy-storage performance have attracted more and more attention. AgNbO_(3) -based lead-free ceramics serve as one of the most promising environmental-friendly candidates. However, their energy storage optimization is seriously limited by the low breakdown strength. Fortunately, thin film as a form of AgNbO3 materials can effectively improve the breakdown strength. In this work, AgNbO_(3)film with ∼550 nm in thickness was deposited on SrRuO_(3 )/(001)SrTiO_(3) using pulsed laser deposition. The AgNbO_(3) film reveals typical relaxor ferroelectric hysteresis loops due to the new nanopillar structure, which contributes to high breakdown strength of up to 1200 kV cm^(-1) . Benefiting from the high breakdown strength, a recoverable energy storage density of 10.3 J cm^(-3) and an energy efficiency of 72.2% are obtained in the AgNbO_(3) film, which demonstrates the promising prospect of AgNbO_(3) film for energy storage applications.展开更多
基金supported by the Natural Science Foundation of Hebei Province,China(No.E2021201044)the National Natural Science Foundation of China(Nos.51802068 and 52073144)+3 种基金the Natural Science Foundation of Jiangsu Province,China(No.BK20201301)State Key Laboratory of New Ceramic and Fine Processing Tsinghua University(No.KF202114)the Research Fund of State Key Laboratory of Mechanics and Control of Mechani-cal Structures(Nanjing University of Aeronautics and Astronautics)(No.MCMS-I-0522G02)the Priority Academic Program Development of Jiangsu Higher Education Institutions(PAPD).
文摘Inspired by the increasing demand for energy-storage capacitors in electrical and electronic systems, dielectrics with high energy-storage performance have attracted more and more attention. AgNbO_(3) -based lead-free ceramics serve as one of the most promising environmental-friendly candidates. However, their energy storage optimization is seriously limited by the low breakdown strength. Fortunately, thin film as a form of AgNbO3 materials can effectively improve the breakdown strength. In this work, AgNbO_(3)film with ∼550 nm in thickness was deposited on SrRuO_(3 )/(001)SrTiO_(3) using pulsed laser deposition. The AgNbO_(3) film reveals typical relaxor ferroelectric hysteresis loops due to the new nanopillar structure, which contributes to high breakdown strength of up to 1200 kV cm^(-1) . Benefiting from the high breakdown strength, a recoverable energy storage density of 10.3 J cm^(-3) and an energy efficiency of 72.2% are obtained in the AgNbO_(3) film, which demonstrates the promising prospect of AgNbO_(3) film for energy storage applications.
