The discovery of efficient,selective,and stable electrocatalysts can be a key point to produce the largescale chemical fuels via electrochemical CO_(2) reduction(ECR).In this study,an earth-abundant and nontoxic ZnO-b...The discovery of efficient,selective,and stable electrocatalysts can be a key point to produce the largescale chemical fuels via electrochemical CO_(2) reduction(ECR).In this study,an earth-abundant and nontoxic ZnO-based electrocatalyst was developed for use in gas-diffusion electrodes(GDE),and the effect of nitrogen(N)doping on the ECR activity of ZnO electrocatalysts was investigated.Initially,a ZnO nanosheet was prepared via the hydrothermal method,and nitridation was performed at different times to control the N-doping content.With an increase in the N-doping content,the morphological properties of the nanosheet changed significantly,namely,the 2D nanosheets transformed into irregularly shaped nanoparticles.Furthermore,the ECR performance of Zn O electrocatalysts with different N-doping content was assessed in 1.0 M KHCO_(3) electrolyte using a gas-diffusion electrode-based ECR cell.While the ECR activity increased after a small amount of N doping,it decreased for higher N doping content.Among them,the N:ZnO-1 h electrocatalysts showed the best CO selectivity,with a faradaic efficiency(FE_(CO))of 92.7%at-0.73 V vs.reversible hydrogen electrode(RHE),which was greater than that of an undoped Zn O electrocatalyst(FE_(CO)of 63.4%at-0.78 V_(RHE)).Also,the N:ZnO-1 h electrocatalyst exhibited outstanding durability for 16 h,with a partial current density of-92.1 mA cm^(-2).This improvement of N:ZnO-1 h electrocatalyst can be explained by density functional theory calculations,demonstrating that this improvement of N:ZnO-1 h electrocatalyst comes from(ⅰ)the optimized active sites lowering the free energy barrier for the rate-determining step(RDS),and(ⅱ)the modification of electronic structure enhancing the electron transfer rate by N doping.展开更多
Self-destructing chips have promising applications for securing data.This paper proposes a new concept of energetic diodes for the first time,which can be used for self-destructive chips.A simple two-step electrochemi...Self-destructing chips have promising applications for securing data.This paper proposes a new concept of energetic diodes for the first time,which can be used for self-destructive chips.A simple two-step electrochemical deposition method is used to prepare ZnO/CuO/Al energetic diode,in which N-type ZnO and P-type CuO are constricted to a PN junction.This paper comprehensively discusses the material properties,morphology,semiconductor characteristics,and exploding performances of the energetic diode.Experimental results show that the energetic diode has typical rectification with a turn-on voltage of about 1.78 V and a reverse leakage current of about 3×10^(-4)A.When a constant voltage of 70 V loads to the energetic diode in the forward direction for about 0.14 s or 55 V loads in the reverse direction for about 0.17 s,the loaded power can excite the energetic diode exploding and the current rises to about100 A.Due to the unique performance of the energetic diode,it has a double function of rectification and explosion.The energetic diode can be used as a logic element in the normal chip to complete the regular operation,and it can release energy to destroy the chip accurately.展开更多
基金supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) (Grant Nos.2018R1A6A1A03024334,2019R1A2C1007637,2021M3I3A1082880,2021R1I1A1A01044174)the Basic Science Research Capacity Enhancement Project through Korea Basic Science Institute (Grant No.2019R1A6C1010024)。
文摘The discovery of efficient,selective,and stable electrocatalysts can be a key point to produce the largescale chemical fuels via electrochemical CO_(2) reduction(ECR).In this study,an earth-abundant and nontoxic ZnO-based electrocatalyst was developed for use in gas-diffusion electrodes(GDE),and the effect of nitrogen(N)doping on the ECR activity of ZnO electrocatalysts was investigated.Initially,a ZnO nanosheet was prepared via the hydrothermal method,and nitridation was performed at different times to control the N-doping content.With an increase in the N-doping content,the morphological properties of the nanosheet changed significantly,namely,the 2D nanosheets transformed into irregularly shaped nanoparticles.Furthermore,the ECR performance of Zn O electrocatalysts with different N-doping content was assessed in 1.0 M KHCO_(3) electrolyte using a gas-diffusion electrode-based ECR cell.While the ECR activity increased after a small amount of N doping,it decreased for higher N doping content.Among them,the N:ZnO-1 h electrocatalysts showed the best CO selectivity,with a faradaic efficiency(FE_(CO))of 92.7%at-0.73 V vs.reversible hydrogen electrode(RHE),which was greater than that of an undoped Zn O electrocatalyst(FE_(CO)of 63.4%at-0.78 V_(RHE)).Also,the N:ZnO-1 h electrocatalyst exhibited outstanding durability for 16 h,with a partial current density of-92.1 mA cm^(-2).This improvement of N:ZnO-1 h electrocatalyst can be explained by density functional theory calculations,demonstrating that this improvement of N:ZnO-1 h electrocatalyst comes from(ⅰ)the optimized active sites lowering the free energy barrier for the rate-determining step(RDS),and(ⅱ)the modification of electronic structure enhancing the electron transfer rate by N doping.
基金the National Natural Science Foundation of China(Grant Nos.22275092,52372084)the Fundamental Research Funds for the Central Universities(Grant No.30923010920)。
文摘Self-destructing chips have promising applications for securing data.This paper proposes a new concept of energetic diodes for the first time,which can be used for self-destructive chips.A simple two-step electrochemical deposition method is used to prepare ZnO/CuO/Al energetic diode,in which N-type ZnO and P-type CuO are constricted to a PN junction.This paper comprehensively discusses the material properties,morphology,semiconductor characteristics,and exploding performances of the energetic diode.Experimental results show that the energetic diode has typical rectification with a turn-on voltage of about 1.78 V and a reverse leakage current of about 3×10^(-4)A.When a constant voltage of 70 V loads to the energetic diode in the forward direction for about 0.14 s or 55 V loads in the reverse direction for about 0.17 s,the loaded power can excite the energetic diode exploding and the current rises to about100 A.Due to the unique performance of the energetic diode,it has a double function of rectification and explosion.The energetic diode can be used as a logic element in the normal chip to complete the regular operation,and it can release energy to destroy the chip accurately.
