A novel matching cell circuitry using charge transfer circuit technique for high precision correlation calculation is presented.The cell calculates the absolute value of the difference between two analog input volt...A novel matching cell circuitry using charge transfer circuit technique for high precision correlation calculation is presented.The cell calculates the absolute value of the difference between two analog input voltages and amplifies the result.Amplification gain can be designed by the capacitance size in the cell and threshold voltage mismatch can be canceled automatically,thus high precision operation of the circuit is achieved.The circuit can be operated with low power dissipation of about 12μW at a frequency of 50MHz.Because of its simple structure and small silicon area,the matching cell is suitable to realize the correlation dealing with many template vectors that have many elements in a chip.展开更多
The resistivity instability of the boron-doped polysilicon resistors being a line resistance element of ICs is within the range of several kΩ's,especially when our running the underneath metal interconnects.Polys...The resistivity instability of the boron-doped polysilicon resistors being a line resistance element of ICs is within the range of several kΩ's,especially when our running the underneath metal interconnects.Polysilicon resistors have been fabricated under various processing conditions as well as some electrical and crystallographic characteristics have been obtained.It is shown the resistivity instability mainly results from the variational carrier mobility.By analyzing the Seto's model,the barrier height and trapped charge density are observed reducing under the Al over layer.Therefore,the resistance instability is also caused by both the charge trapping/detrapping occurring at polysilicon grain boundaries and the resultant variation in the potential barrier height.The formation of high-stability polysilicon resistors in the range of several kΩ's has been decided by compensating the ion implantation,which makes the charge trapping/detrapping at the grain boundary less susceptible to the hydrogen annealing.展开更多
利用小波软阈值消噪法和快速傅里叶变换研究不同温度条件下芦荟叶片电信号的基本特征及变化规律。通过植物电信号谱边缘频率(SEF)、谱重心频率(SGF)和功率谱熵(PSE)研究不同温度下芦荟(Aloe vera L.)叶片电信号功率谱的变化。结果表明,...利用小波软阈值消噪法和快速傅里叶变换研究不同温度条件下芦荟叶片电信号的基本特征及变化规律。通过植物电信号谱边缘频率(SEF)、谱重心频率(SGF)和功率谱熵(PSE)研究不同温度下芦荟(Aloe vera L.)叶片电信号功率谱的变化。结果表明,芦荟的电信号是一种强度为mV数量级、频率分布在5 Hz以下的低频信号;随着温度的升高,电信号的SEF和SGF向高频段移动,细胞活动受到激发,PSE急剧增加;在升温过程中SEF、SGF和PSE三者的变化趋势趋于一致,PSE与SGF的变化之间有很强的关联性,因而植物电信号PSE或SGF的变化可以作为叶片细胞响应外界环境变化的灵敏指标,而对植物生长发育的生理生化过程实施科学调控。展开更多
文摘A novel matching cell circuitry using charge transfer circuit technique for high precision correlation calculation is presented.The cell calculates the absolute value of the difference between two analog input voltages and amplifies the result.Amplification gain can be designed by the capacitance size in the cell and threshold voltage mismatch can be canceled automatically,thus high precision operation of the circuit is achieved.The circuit can be operated with low power dissipation of about 12μW at a frequency of 50MHz.Because of its simple structure and small silicon area,the matching cell is suitable to realize the correlation dealing with many template vectors that have many elements in a chip.
文摘The resistivity instability of the boron-doped polysilicon resistors being a line resistance element of ICs is within the range of several kΩ's,especially when our running the underneath metal interconnects.Polysilicon resistors have been fabricated under various processing conditions as well as some electrical and crystallographic characteristics have been obtained.It is shown the resistivity instability mainly results from the variational carrier mobility.By analyzing the Seto's model,the barrier height and trapped charge density are observed reducing under the Al over layer.Therefore,the resistance instability is also caused by both the charge trapping/detrapping occurring at polysilicon grain boundaries and the resultant variation in the potential barrier height.The formation of high-stability polysilicon resistors in the range of several kΩ's has been decided by compensating the ion implantation,which makes the charge trapping/detrapping at the grain boundary less susceptible to the hydrogen annealing.
文摘利用小波软阈值消噪法和快速傅里叶变换研究不同温度条件下芦荟叶片电信号的基本特征及变化规律。通过植物电信号谱边缘频率(SEF)、谱重心频率(SGF)和功率谱熵(PSE)研究不同温度下芦荟(Aloe vera L.)叶片电信号功率谱的变化。结果表明,芦荟的电信号是一种强度为mV数量级、频率分布在5 Hz以下的低频信号;随着温度的升高,电信号的SEF和SGF向高频段移动,细胞活动受到激发,PSE急剧增加;在升温过程中SEF、SGF和PSE三者的变化趋势趋于一致,PSE与SGF的变化之间有很强的关联性,因而植物电信号PSE或SGF的变化可以作为叶片细胞响应外界环境变化的灵敏指标,而对植物生长发育的生理生化过程实施科学调控。
