南京电子器件研究所基于芯片微凸点制备工艺和倒装互连工艺,进行了GaAs,GaN等晶圆级异构集成3D芯片互连工艺的研究,实现了芯片与芯片堆叠(Die to die,D2D)到芯片与圆片堆叠(Die to wafer,D2W)的技术性突破。芯粒间采用耐腐蚀、抗氧化、...南京电子器件研究所基于芯片微凸点制备工艺和倒装互连工艺,进行了GaAs,GaN等晶圆级异构集成3D芯片互连工艺的研究,实现了芯片与芯片堆叠(Die to die,D2D)到芯片与圆片堆叠(Die to wafer,D2W)的技术性突破。芯粒间采用耐腐蚀、抗氧化、有良好塑性变形的金凸点作为互连材料。展开更多
The doping dependence of dry thermal oxidation rates in n-type 6H-SiC was studied. The oxidation temperature ranged from 1050 to 1150℃ and the nitrogen doping concentration ranged from 9.53× 10^16, 1.44× 10...The doping dependence of dry thermal oxidation rates in n-type 6H-SiC was studied. The oxidation temperature ranged from 1050 to 1150℃ and the nitrogen doping concentration ranged from 9.53× 10^16, 1.44× 10^17, to 2.68×10^18 cm ^3. By combining the modified deal-grove model and Arrhenius equation, the linear and parabolic rate constants, and their corresponding activation energies were extracted. The results show that： higher temperature corresponded to thicker oxides; dry thermal oxidation rate in n-type 6H-SiC depended on the doping concentration; both linear-rate-constant and parabolic-rate-constant increased with the doping concentration; the parabolic activation energy increased from 0.082 to 0.104 e V, both linear and parabolic activation energies increasing with the doping concentration; and, the parabolic pre-exponential factor increased from 2.6 ×10^4 to 2.7 ×10^5nm^2/s, both linear and parabolic pre-exponential factor increasing with doping concentration. Moreover, the experiment also illustrated that it is unreasonable to use a variation of the Arrhenius activation energy to explain the doping dependence of thermal oxidation on SiC.展开更多
文摘南京电子器件研究所基于芯片微凸点制备工艺和倒装互连工艺,进行了GaAs,GaN等晶圆级异构集成3D芯片互连工艺的研究,实现了芯片与芯片堆叠(Die to die,D2D)到芯片与圆片堆叠(Die to wafer,D2W)的技术性突破。芯粒间采用耐腐蚀、抗氧化、有良好塑性变形的金凸点作为互连材料。
基金Project supported by the National Natural Science Foundation of China(No.F040405)
文摘The doping dependence of dry thermal oxidation rates in n-type 6H-SiC was studied. The oxidation temperature ranged from 1050 to 1150℃ and the nitrogen doping concentration ranged from 9.53× 10^16, 1.44× 10^17, to 2.68×10^18 cm ^3. By combining the modified deal-grove model and Arrhenius equation, the linear and parabolic rate constants, and their corresponding activation energies were extracted. The results show that： higher temperature corresponded to thicker oxides; dry thermal oxidation rate in n-type 6H-SiC depended on the doping concentration; both linear-rate-constant and parabolic-rate-constant increased with the doping concentration; the parabolic activation energy increased from 0.082 to 0.104 e V, both linear and parabolic activation energies increasing with the doping concentration; and, the parabolic pre-exponential factor increased from 2.6 ×10^4 to 2.7 ×10^5nm^2/s, both linear and parabolic pre-exponential factor increasing with doping concentration. Moreover, the experiment also illustrated that it is unreasonable to use a variation of the Arrhenius activation energy to explain the doping dependence of thermal oxidation on SiC.
