设计了一种应用于反激式AC-DC变换器的控制芯片。为了提高AC-DC变换器的工作稳定性,降低成本,实现全负载范围较高的转换效率,采用PSM流限控制模式。PSM流限控制模式结构简单,可有效降低系统成本。系统根据负载情况分段调节流限值,实现...设计了一种应用于反激式AC-DC变换器的控制芯片。为了提高AC-DC变换器的工作稳定性,降低成本,实现全负载范围较高的转换效率,采用PSM流限控制模式。PSM流限控制模式结构简单,可有效降低系统成本。系统根据负载情况分段调节流限值,实现各负载点较高的转换效率,减小输出电压纹波,避免轻载时开关频率进入音频范围。芯片主要采用数字控制,具有高稳定性和低功耗,内置700 V耐压功率MOSFET。整个系统采用3μm 700 V BCD工艺实现。展开更多
In this paper, a new structure of a 4H-SiC bipolar junction transistor （BJT） with a buried layer （BL） in the base is presented. The current gain shows an approximately 100% increase compared with that of the conve...In this paper, a new structure of a 4H-SiC bipolar junction transistor （BJT） with a buried layer （BL） in the base is presented. The current gain shows an approximately 100% increase compared with that of the conventional structure. This is attributed to the creation of a built-in electric field for the minority carriers to transport in the base which is explained based on 2D device simulations. The optimized design of the buried layer region is also considered by numeric simulations.展开更多
文摘设计了一种应用于反激式AC-DC变换器的控制芯片。为了提高AC-DC变换器的工作稳定性,降低成本,实现全负载范围较高的转换效率,采用PSM流限控制模式。PSM流限控制模式结构简单,可有效降低系统成本。系统根据负载情况分段调节流限值,实现各负载点较高的转换效率,减小输出电压纹波,避免轻载时开关频率进入音频范围。芯片主要采用数字控制,具有高稳定性和低功耗,内置700 V耐压功率MOSFET。整个系统采用3μm 700 V BCD工艺实现。
文摘In this paper, a new structure of a 4H-SiC bipolar junction transistor （BJT） with a buried layer （BL） in the base is presented. The current gain shows an approximately 100% increase compared with that of the conventional structure. This is attributed to the creation of a built-in electric field for the minority carriers to transport in the base which is explained based on 2D device simulations. The optimized design of the buried layer region is also considered by numeric simulations.
