The influences of slight amount of B element on the microstructure and properties of AlCoCrFeNiBx high entropy alloys（x = 0,0.01,…,0.09 and 0.1,mole fraction） were investigated.The AlCoCrFeNi high entropy alloy exh...The influences of slight amount of B element on the microstructure and properties of AlCoCrFeNiBx high entropy alloys（x = 0,0.01,…,0.09 and 0.1,mole fraction） were investigated.The AlCoCrFeNi high entropy alloy exhibits equiaxed grain structures with obvious composition segregation.However,with the addition of B element,the alloys exhibit dendrite structures.Inside the dendrites,spinodal decomposition structure can be clearly observed.With the addition of B element,the crystal structures change from（B2 ＋ BCC） to（B2 ＋ BCC ＋ FCC） structures,and the hardness firstly increases from HV 486.7 to HV 502.4,then declines to HV 460.7（x ≥ 0.02）.The compressive fracture strength firstly shows a trend of increasing,and then declining（x ≥ 0.08）.The coercive forces and the specific saturation magnetizations of the alloys decrease as B addition contents increase,the decreasing coercive forces show a better soft magnetic behavior.展开更多
A new purification process was developed to remove impurities in metallurgical grade silicon （MG-Si） by electromagnetic induction slag melting （EISM）. Vacuum melting furnace was used to purify boron in different s...A new purification process was developed to remove impurities in metallurgical grade silicon （MG-Si） by electromagnetic induction slag melting （EISM）. Vacuum melting furnace was used to purify boron in different slag systems. The results show that the removal effect in SiO2-CaO-Al2O3 systems is better than that in other slag systems by EISM. The boron content in MG-Si is successfully reduced from 1.5× 10^-5 to 0.2× 10^-5 during EISM at 1 823 K for 2 h. Meanwhile, Al, Ca and Mg elements in MG-Si are also well removed and their removal efficiencies reach 85.0%, 50.2% and 66.7%, respectively, which indicates that EISM is very effective to remove boron and metal impurities in silicon.展开更多
基金Projects(51134013,51104029,51471044)supported by the National Natural Science Foundation of ChinaProject supported by the Fundamental Research Funds for the Central Universities,China+1 种基金Project(LZ2014007)supported by the Key Laboratory of Basic Research Projects of Liaoning Province Department of Education,ChinaProject(2014028013)supported by the Natural Science Foundation of Liaoning Province,China
文摘The influences of slight amount of B element on the microstructure and properties of AlCoCrFeNiBx high entropy alloys（x = 0,0.01,…,0.09 and 0.1,mole fraction） were investigated.The AlCoCrFeNi high entropy alloy exhibits equiaxed grain structures with obvious composition segregation.However,with the addition of B element,the alloys exhibit dendrite structures.Inside the dendrites,spinodal decomposition structure can be clearly observed.With the addition of B element,the crystal structures change from（B2 ＋ BCC） to（B2 ＋ BCC ＋ FCC） structures,and the hardness firstly increases from HV 486.7 to HV 502.4,then declines to HV 460.7（x ≥ 0.02）.The compressive fracture strength firstly shows a trend of increasing,and then declining（x ≥ 0.08）.The coercive forces and the specific saturation magnetizations of the alloys decrease as B addition contents increase,the decreasing coercive forces show a better soft magnetic behavior.
基金Project (50674018) supported by the National Natural Science Foundation of China
文摘A new purification process was developed to remove impurities in metallurgical grade silicon （MG-Si） by electromagnetic induction slag melting （EISM）. Vacuum melting furnace was used to purify boron in different slag systems. The results show that the removal effect in SiO2-CaO-Al2O3 systems is better than that in other slag systems by EISM. The boron content in MG-Si is successfully reduced from 1.5× 10^-5 to 0.2× 10^-5 during EISM at 1 823 K for 2 h. Meanwhile, Al, Ca and Mg elements in MG-Si are also well removed and their removal efficiencies reach 85.0%, 50.2% and 66.7%, respectively, which indicates that EISM is very effective to remove boron and metal impurities in silicon.
