This investigation explores a low-noise amplifier （LNA） with a coplanar waveguide （CPW） structure, in which a two-stage amplifier is associated with a cascade schematic circuit, implemented in 0.15μm GaAs pseudom...This investigation explores a low-noise amplifier （LNA） with a coplanar waveguide （CPW） structure, in which a two-stage amplifier is associated with a cascade schematic circuit, implemented in 0.15μm GaAs pseudomorphic high electron mobility transistor （pHEMT） technology in a Ka-band （26.540.0 GHz） microwave monolithic integrated circuit （MMIC）. The experimental results demonstrate that the proposed LNA has a peak gain of 12.53 dt3 at 30 GHz and a minimum noise figure of 3.3 dB at 29.5 GHz, when biased at a Vds of 2 V and a Vgs of-0.6 V with a drain current of 16 mA in the circuit. The results show that the millimeter-wave LNA with coplanar waveguide structure has a higher gain and wider bandwidth than a conventional circuit. Finally, the overall LNA characterization exhibits high gain and low noise, indicating that the LNA has a compact circuit and favorable RF characteristics. The strong RF character exhibited by the LNA circuit can be used in millimeter-wave circuit applications.展开更多
A built-in linearizer was applied to improve the linearity in a 5.2-GHz power amplifier microwave monolithic integrated circuit（MMIC）,which was undertaken with 0.15-μm AlGaAs/InGaAs D-mode PHEMT technology. The pow...A built-in linearizer was applied to improve the linearity in a 5.2-GHz power amplifier microwave monolithic integrated circuit（MMIC）,which was undertaken with 0.15-μm AlGaAs/InGaAs D-mode PHEMT technology. The power amplifier（PA） was studied taking into account the linearizer circuit and the coplanar waveguide（CPW） structures.Based on these technologies,the power amplifier,which has a chip size of 1.44×1.10 mm^2,obtained an output power of 13.3 dBm and a power gain of 14 dB in the saturation region.An input third-order intercept point （IIP3） of-3 dBm,an output third-order intercept point（OIP3） of 21.1 dBm and a power added efficiency（PAE） of 22% were attained,respectively.Finally,the overall power characterization exhibited high gain and high linearity,which illustrates that the power amplifier has a compact circuit size and exhibits favorable RF characteristics.This power circuit demonstrated high RF characterization and could be used for microwave power circuit applications at 5.2 GHz.展开更多
文摘This investigation explores a low-noise amplifier （LNA） with a coplanar waveguide （CPW） structure, in which a two-stage amplifier is associated with a cascade schematic circuit, implemented in 0.15μm GaAs pseudomorphic high electron mobility transistor （pHEMT） technology in a Ka-band （26.540.0 GHz） microwave monolithic integrated circuit （MMIC）. The experimental results demonstrate that the proposed LNA has a peak gain of 12.53 dt3 at 30 GHz and a minimum noise figure of 3.3 dB at 29.5 GHz, when biased at a Vds of 2 V and a Vgs of-0.6 V with a drain current of 16 mA in the circuit. The results show that the millimeter-wave LNA with coplanar waveguide structure has a higher gain and wider bandwidth than a conventional circuit. Finally, the overall LNA characterization exhibits high gain and low noise, indicating that the LNA has a compact circuit and favorable RF characteristics. The strong RF character exhibited by the LNA circuit can be used in millimeter-wave circuit applications.
文摘A built-in linearizer was applied to improve the linearity in a 5.2-GHz power amplifier microwave monolithic integrated circuit（MMIC）,which was undertaken with 0.15-μm AlGaAs/InGaAs D-mode PHEMT technology. The power amplifier（PA） was studied taking into account the linearizer circuit and the coplanar waveguide（CPW） structures.Based on these technologies,the power amplifier,which has a chip size of 1.44×1.10 mm^2,obtained an output power of 13.3 dBm and a power gain of 14 dB in the saturation region.An input third-order intercept point （IIP3） of-3 dBm,an output third-order intercept point（OIP3） of 21.1 dBm and a power added efficiency（PAE） of 22% were attained,respectively.Finally,the overall power characterization exhibited high gain and high linearity,which illustrates that the power amplifier has a compact circuit size and exhibits favorable RF characteristics.This power circuit demonstrated high RF characterization and could be used for microwave power circuit applications at 5.2 GHz.
