利用直流电弧等离子体法在甲烷气氛中制备碳包覆磁性镍纳米胶囊（Carbon-coated Ni nanocapsules,Ni（C）NCs）,将它作为电磁波吸收剂,按照质量比10%、20%、30%和40%与有机石蜡基体复合,在0.1～18GHz范围内测定其复介电常数和复磁导率,...利用直流电弧等离子体法在甲烷气氛中制备碳包覆磁性镍纳米胶囊（Carbon-coated Ni nanocapsules,Ni（C）NCs）,将它作为电磁波吸收剂,按照质量比10%、20%、30%和40%与有机石蜡基体复合,在0.1～18GHz范围内测定其复介电常数和复磁导率,并对其电磁波响应特性及吸收机制进行了研究。研究结果表明,Ni（C）纳米胶囊具有明显的极化损耗特征,其介电常数在低频范围内随频率提高而急剧衰减,而磁导率具有宽化的多重共振峰;随着Ni（C）纳米胶囊添加量的增加,其介电常数逐渐增加,其复磁导率实部和虚部分别在0.1～8GHz、0.1～10GHz出现增加,而在8～18GHz和10～18GHz范围内出现实部减小和虚部平缓变化的特征。根据极化、涡流以及反射损耗的理论分析,发现Ni（C）纳米胶囊以介电损耗为主,并对相关机制进行了探讨。展开更多
A novel structure of low-voltage trigger silicon-controlled rectifiers(LVTSCRs) with low trigger voltage and high holding voltage is proposed for electrostatic discharge(ESD) protection. The proposed ESD protection de...A novel structure of low-voltage trigger silicon-controlled rectifiers(LVTSCRs) with low trigger voltage and high holding voltage is proposed for electrostatic discharge(ESD) protection. The proposed ESD protection device possesses an ESD implant and a floating structure. This improvement enhances the current discharge capability of the gate-grounded NMOS and weakens the current gain of the silicon-controlled rectifier current path. According to the simulation results, the proposed device retains a low trigger voltage characteristic of LVTSCRs and simultaneously increases the holding voltage to 5.53 V, providing an effective way to meet the ESD protection requirement of the 5 V CMOS process.展开更多
Monocrystal Sn nanorods encapsulated in the multi-walled carbon nanotubes(Sn@CNT NRs), were fabricated by a facile arc-discharge plasma process, using bulk Sn as the raw target and methane as the gaseous carbon source...Monocrystal Sn nanorods encapsulated in the multi-walled carbon nanotubes(Sn@CNT NRs), were fabricated by a facile arc-discharge plasma process, using bulk Sn as the raw target and methane as the gaseous carbon source. The typical Sn@CNT NRs are 40–90 nm in diameter and400–500 nm in length. The CNTs protect the inner Sn nanorods from oxidation. Temperature dependent I–V curve and electronic resistance reveal that the dielectric behavior of Sn@CNT NRs is attributed to the multi-wall CNTs shell and follows Mott-David variable range hopping [ln R(T)∝T-1/4]model above the superconducting critical temperature of3.69 K, with semiconductor–superconductor transition(SST).Josephson junction of Sn/CNT/Sn layered structure is responsible for the superconducting behavior of Sn@CNT NRs.展开更多
文摘利用直流电弧等离子体法在甲烷气氛中制备碳包覆磁性镍纳米胶囊（Carbon-coated Ni nanocapsules,Ni（C）NCs）,将它作为电磁波吸收剂,按照质量比10%、20%、30%和40%与有机石蜡基体复合,在0.1～18GHz范围内测定其复介电常数和复磁导率,并对其电磁波响应特性及吸收机制进行了研究。研究结果表明,Ni（C）纳米胶囊具有明显的极化损耗特征,其介电常数在低频范围内随频率提高而急剧衰减,而磁导率具有宽化的多重共振峰;随着Ni（C）纳米胶囊添加量的增加,其介电常数逐渐增加,其复磁导率实部和虚部分别在0.1～8GHz、0.1～10GHz出现增加,而在8～18GHz和10～18GHz范围内出现实部减小和虚部平缓变化的特征。根据极化、涡流以及反射损耗的理论分析,发现Ni（C）纳米胶囊以介电损耗为主,并对相关机制进行了探讨。
基金supported by the National Natural Science Foundation of China (Grant No. 61904110)。
文摘A novel structure of low-voltage trigger silicon-controlled rectifiers(LVTSCRs) with low trigger voltage and high holding voltage is proposed for electrostatic discharge(ESD) protection. The proposed ESD protection device possesses an ESD implant and a floating structure. This improvement enhances the current discharge capability of the gate-grounded NMOS and weakens the current gain of the silicon-controlled rectifier current path. According to the simulation results, the proposed device retains a low trigger voltage characteristic of LVTSCRs and simultaneously increases the holding voltage to 5.53 V, providing an effective way to meet the ESD protection requirement of the 5 V CMOS process.
基金financially supported by the National Natural Science Foundation of China(51331006 and 51271044)
文摘Monocrystal Sn nanorods encapsulated in the multi-walled carbon nanotubes(Sn@CNT NRs), were fabricated by a facile arc-discharge plasma process, using bulk Sn as the raw target and methane as the gaseous carbon source. The typical Sn@CNT NRs are 40–90 nm in diameter and400–500 nm in length. The CNTs protect the inner Sn nanorods from oxidation. Temperature dependent I–V curve and electronic resistance reveal that the dielectric behavior of Sn@CNT NRs is attributed to the multi-wall CNTs shell and follows Mott-David variable range hopping [ln R(T)∝T-1/4]model above the superconducting critical temperature of3.69 K, with semiconductor–superconductor transition(SST).Josephson junction of Sn/CNT/Sn layered structure is responsible for the superconducting behavior of Sn@CNT NRs.
