SPAD阵列的规模不断扩大对读出电路(Read-out Integrated Circuit,ROIC)提出了更高的要求,时间数字转换器(Time to Digital Converter,TDC)是ROIC的核心电路,完成对光子飞行时间(Time-of-Flight,TOF)高精度量化。为避免大规模阵列中高...SPAD阵列的规模不断扩大对读出电路(Read-out Integrated Circuit,ROIC)提出了更高的要求,时间数字转换器(Time to Digital Converter,TDC)是ROIC的核心电路,完成对光子飞行时间(Time-of-Flight,TOF)高精度量化。为避免大规模阵列中高频时钟信号长距离走线而引起的串扰和噪声干扰,抑制初相误差引起的检测精度退化,设计了一种基于内置时钟的ROIC阵列电路,阵列像素间距均为100μm,内置于各像素内的门控环形振荡器(Gated Ring Oscillator,GRO)独立提供像素TDC所需的高频分相时钟信号,各像素GRO均由像素外置锁相环(Phase Locked Loop,PLL)产生的压控信号控制。由于采用一种基于事件驱动的检测策略,只量化光子事件有效触发的TOF,有效降低了系统功耗。该芯片采用TSMC 0.18μm 1.8 V标准CMOS工艺制造,测试结果表明:TDC的时间分辨率和量程分别为102 ps和100 ns,微分非线性DNL低于0.8 LSB,积分非线性INL低于1.3 LSB,系统功耗小于59.3 mW。展开更多
The on-resistance degradations of the p-type lateral extended drain MOS transistor （pLEDMOS） with thick gate oxide under different hot carrier stress conditions are different, which has been experimentally investiga...The on-resistance degradations of the p-type lateral extended drain MOS transistor （pLEDMOS） with thick gate oxide under different hot carrier stress conditions are different, which has been experimentally investigated. This difference results from the interface trap generation and the hot electron injection, and trapping into the thick gate oxide and field oxide of the pLEDMOS transistor. An improved method to reduce the on-resistance degradations is also presented, which uses the field oxide as the gate oxide instead of the thick gate oxide. The effects are analyzed with a MEDICI simulator.展开更多
研究了常规LEDM O S,带有两块多晶硅场极板LEDM O S以及带有两块多晶硅场极板和一块铝场极板的LEDM O S表面电场分布情况,重点研究了多块场极板在不同的外加电压下,三种LEDM O S的表面峰值电场和导通电阻的变化情况。模拟结果和流水实...研究了常规LEDM O S,带有两块多晶硅场极板LEDM O S以及带有两块多晶硅场极板和一块铝场极板的LEDM O S表面电场分布情况,重点研究了多块场极板在不同的外加电压下,三种LEDM O S的表面峰值电场和导通电阻的变化情况。模拟结果和流水实验结果都表明:多块场极板是提高LEDM O S击穿电压的一种有效方法,而且场极板对导通电阻的影响很小。研究结果还表明:由于金属铝引线下面的氧化层很厚,所以铝引线几乎不会影响到LEDM O S的击穿特性。展开更多
文摘The on-resistance degradations of the p-type lateral extended drain MOS transistor （pLEDMOS） with thick gate oxide under different hot carrier stress conditions are different, which has been experimentally investigated. This difference results from the interface trap generation and the hot electron injection, and trapping into the thick gate oxide and field oxide of the pLEDMOS transistor. An improved method to reduce the on-resistance degradations is also presented, which uses the field oxide as the gate oxide instead of the thick gate oxide. The effects are analyzed with a MEDICI simulator.
文摘研究了常规LEDM O S,带有两块多晶硅场极板LEDM O S以及带有两块多晶硅场极板和一块铝场极板的LEDM O S表面电场分布情况,重点研究了多块场极板在不同的外加电压下,三种LEDM O S的表面峰值电场和导通电阻的变化情况。模拟结果和流水实验结果都表明:多块场极板是提高LEDM O S击穿电压的一种有效方法,而且场极板对导通电阻的影响很小。研究结果还表明:由于金属铝引线下面的氧化层很厚,所以铝引线几乎不会影响到LEDM O S的击穿特性。
