A Schottky gate resonant tunneling transistor （SGRTT） is fabricated. Relying on simulation by ATLAS software,we find that the gate voltages can be used to control the current of SGRTT when the emitter terminal is gr...A Schottky gate resonant tunneling transistor （SGRTT） is fabricated. Relying on simulation by ATLAS software,we find that the gate voltages can be used to control the current of SGRTT when the emitter terminal is grounded and a positive bias voltage is applied to the collector terminal. When the collector terminal is grounded, the gate voltages can control the peak voltage. As revealed by measurement results, the reason is that the gate voltages and the electric field distribution on emitter and collector terminal change the distribution of the depletion region.展开更多
A wideband monolithic optoelectronic integrated receiver with a high-speed photo-detector,completely compatible with standard CMOS processes,is designed and implemented in 0.6μm standard CMOS technology.The experimen...A wideband monolithic optoelectronic integrated receiver with a high-speed photo-detector,completely compatible with standard CMOS processes,is designed and implemented in 0.6μm standard CMOS technology.The experimental results demonstrate that its performance approaches applicable requirements,where the photo-detector achieves a -3dB frequency of 1.11GHz,and the receiver achieves a 3dB bandwidth of 733MHz and a sensitivity of -9dBm for λ=850nm at BER=10-12.展开更多
A novel high-bandwidth, high-sensitivity differential optical receiver without any additional cost compared to general optical receivers, is proposed for high-speed optical communications and interconnections. High ba...A novel high-bandwidth, high-sensitivity differential optical receiver without any additional cost compared to general optical receivers, is proposed for high-speed optical communications and interconnections. High bandwidth and high sensitivity are achieved through a fully differential transimpedance amplifier with balanced input loads and two photodetectors to convert the incident light into a pair of differential photogenerated currents,respectively. In addition,a corresponding 0.35μm standard CMOS optoelectronic integrated receiver with two 60μm × 30μm, 1. 483pF fingered p^＋/n- well/p-substrate photodiodes is also presented. The simulation results demonstrate that it achieves a 1.37GHz bandwidth and a 81.9dBΩ transimpedance gain,supporting data rates up to at least 2Gbit/s. The device consumes a core area of 0. 198mm^2 and the optical sensitivity is at least - 13dBm for a 10^-12 bit error rate under a 2^15 - 1 PRBS input signal.展开更多
文摘A Schottky gate resonant tunneling transistor （SGRTT） is fabricated. Relying on simulation by ATLAS software,we find that the gate voltages can be used to control the current of SGRTT when the emitter terminal is grounded and a positive bias voltage is applied to the collector terminal. When the collector terminal is grounded, the gate voltages can control the peak voltage. As revealed by measurement results, the reason is that the gate voltages and the electric field distribution on emitter and collector terminal change the distribution of the depletion region.
文摘A wideband monolithic optoelectronic integrated receiver with a high-speed photo-detector,completely compatible with standard CMOS processes,is designed and implemented in 0.6μm standard CMOS technology.The experimental results demonstrate that its performance approaches applicable requirements,where the photo-detector achieves a -3dB frequency of 1.11GHz,and the receiver achieves a 3dB bandwidth of 733MHz and a sensitivity of -9dBm for λ=850nm at BER=10-12.
文摘A novel high-bandwidth, high-sensitivity differential optical receiver without any additional cost compared to general optical receivers, is proposed for high-speed optical communications and interconnections. High bandwidth and high sensitivity are achieved through a fully differential transimpedance amplifier with balanced input loads and two photodetectors to convert the incident light into a pair of differential photogenerated currents,respectively. In addition,a corresponding 0.35μm standard CMOS optoelectronic integrated receiver with two 60μm × 30μm, 1. 483pF fingered p^＋/n- well/p-substrate photodiodes is also presented. The simulation results demonstrate that it achieves a 1.37GHz bandwidth and a 81.9dBΩ transimpedance gain,supporting data rates up to at least 2Gbit/s. The device consumes a core area of 0. 198mm^2 and the optical sensitivity is at least - 13dBm for a 10^-12 bit error rate under a 2^15 - 1 PRBS input signal.
