Spin pumping in yttrium-iron-garnet（YIG）/nonmagnetic-metal（NM） layer systems under ferromagnetic resonance（FMR） conditions is a popular method of generating spin current in the NM layer.A good understanding of t...Spin pumping in yttrium-iron-garnet（YIG）/nonmagnetic-metal（NM） layer systems under ferromagnetic resonance（FMR） conditions is a popular method of generating spin current in the NM layer.A good understanding of the spin current source is essential in extracting spin Hall angle of the NM and in potential spintronics applications.It is widely believed that spin current is pumped from precessing YIG magnetization into NM layer.Here,by combining microwave absorption and DC-voltage measurements on thin YIG/Pt and YIG/NM_1/NM_2（NM_1 =Cu or Al,NM_2 =Pt or Ta）,we unambiguously showed that spin current in NM,instead of from the precessing YIG magnetization,came from the magnetized NM surface（in contact with thin YIG）,either due to the magnetic proximity effect（MPE） or from the inevitable diffused Fe ions from YIG to NM.This conclusion is reached through analyzing the FMR microwave absorption peaks with the DC-voltage peak from the inverse spin Hall effect（ISHE）.The voltage signal is attributed to the magnetized NM surface,hardly observed in the conventional FMR experiments,and was greatly amplified when the electrical detection circuit was switched on.展开更多
The low Gilbert damping factor, which is usually measured by ferromagnetic resonance, is crucial in spintronic applications. Two-magnon scattering occurs when the orthogonMity of the ferromagnetic resonance mode and o...The low Gilbert damping factor, which is usually measured by ferromagnetic resonance, is crucial in spintronic applications. Two-magnon scattering occurs when the orthogonMity of the ferromagnetic resonance mode and other degenerate spin wave modes was broken by magnetic anisotropy, voids, second phase, surface defects, etc., which is important in analysis of ferromagnetic resonance linewidth. Direct fitting to linewidth with Gilbert damping is advisable only when the measured linewidth is a linear function of measuring frequency in a broad band measurement. We observe the nonlinear ferromagnetic resonance linewidth of Co2MnSi thin films with respect to measuring frequency in broad band measurement. Experimental data could be well fitted with the model including two-magnon scattering with no fixed parameters. The fitting results show that two-magnon scattering results in the nonlinear linewidth behavior, and the Gilbert damping factor is much smaller than reported ones, indicating that our Co2MnSi films are more suitable for the applications of spin transfer torque.展开更多
The spin transparency at the normal/ferromagnetic metal （NM/FM） interface was studied in PffYIG/Cu/FM multilayers. The spin current generated by the spin Hall effect （SHE） in Pt flows into Cu/FM due to magnetic in...The spin transparency at the normal/ferromagnetic metal （NM/FM） interface was studied in PffYIG/Cu/FM multilayers. The spin current generated by the spin Hall effect （SHE） in Pt flows into Cu/FM due to magnetic insulator YIG blocking charge current and transmitting spin current via the magnon current. Therefore, the nonlocal voltage induced by an inverse spin Hall effect （ISHE） in FM can be detected. With the magnetization of FM parallel or antiparallel to the spin polarization of pure spin currents （σsc）, the spin-independent nonlocal voltage is induced. This indicates that the spin transparency at the Cu/FM interface is spin-independent, which demonstrates that the influence of spin-dependent electro-chemical potential due to spin accumulation on the interfacial spin transparency is negligible. Furthermore, a larger spin Hall angle of Fe20Ni80 （Py） than that of Ni is obtained from the nonlocal voltage measurements.展开更多
Copper phthalocyanine junctions, fabricated by magnetron sputtering and evaporating methods, show multi-polar （unipolar and bipolar） resistance switching and the memory effect. The multi-polar resistance switching h...Copper phthalocyanine junctions, fabricated by magnetron sputtering and evaporating methods, show multi-polar （unipolar and bipolar） resistance switching and the memory effect. The multi-polar resistance switching has not been observed simultaneously in one organic material before. With both electrodes being cobalt, the unipolar resistance switching is universal. The high resistance state is switched to the low resistance state when the bias reaches the set voltage. Generally, the set voltage increases with the thickness of copper phthalocyanine and decreases with increasing dwell time of bias. Moreover, the low resistance state could be switched to the high resistance state by absorbing the phonon energy. The stability of the low resistance state could be tuned by different electrodes. In Au/copper phthalocyanine/Co system, the low resistance state is far more stable, and the bipolar resistance switching is found. Temperature dependence of electrical transport measurements demonstrates that there are no obvious differences in the electrical transport mechanism before and after the resistance switching. They fit quite well with Mott variable range hopping theory. The effect of A1203 on the resistance switching is excluded by control experiments. The holes trapping and detrapping in copper phthalocyanine layer are responsible for the resistance switching, and the interfacial effect between electrodes and copper phthalocyanine layer affects the memory effect.展开更多
Co2MnSi thin films are made by magnetron sputtering onto MgO （001） substrates. The crystalline quality is improved by increasing depositing temperature and/or annealing temperature. The sample deposited at 550℃ and...Co2MnSi thin films are made by magnetron sputtering onto MgO （001） substrates. The crystalline quality is improved by increasing depositing temperature and/or annealing temperature. The sample deposited at 550℃ and subsequently annealed at 550℃ （sample I） exhibits a pseudo-epitaxial growth with partially ordered L21 phase. Sample I shows a four-fold magnetic anisotropy, in addition to a relatively weak uniaxial anisotropy. The Gilbert damping factor of sample I is smaller than 0.001, much smaller than reported ones. The possible reasons responsible for the small Gilbert damping factor are discussed, including weak spin-orbit coupling, small density of states at Fermi level, and so on.展开更多
基金Project supported by the National Basic Research Program of China(Grant Nos.2015CB921502 and 2013CB922303)the National Natural Science Foundation of China(Grant Nos.11474184,116627805,and 11504203)+2 种基金the 111 Project(Grant No.B13029)Zhang Yin and Wang Xiangrong were supported by the Hong Kong RGC Grants(Grant Nos.16301816 and 605413)Wu Yong and Jiang Yong were supported by the National Natural Science Foundation of China(Grant No.51501007)
文摘Spin pumping in yttrium-iron-garnet（YIG）/nonmagnetic-metal（NM） layer systems under ferromagnetic resonance（FMR） conditions is a popular method of generating spin current in the NM layer.A good understanding of the spin current source is essential in extracting spin Hall angle of the NM and in potential spintronics applications.It is widely believed that spin current is pumped from precessing YIG magnetization into NM layer.Here,by combining microwave absorption and DC-voltage measurements on thin YIG/Pt and YIG/NM_1/NM_2（NM_1 =Cu or Al,NM_2 =Pt or Ta）,we unambiguously showed that spin current in NM,instead of from the precessing YIG magnetization,came from the magnetized NM surface（in contact with thin YIG）,either due to the magnetic proximity effect（MPE） or from the inevitable diffused Fe ions from YIG to NM.This conclusion is reached through analyzing the FMR microwave absorption peaks with the DC-voltage peak from the inverse spin Hall effect（ISHE）.The voltage signal is attributed to the magnetized NM surface,hardly observed in the conventional FMR experiments,and was greatly amplified when the electrical detection circuit was switched on.
基金Supported by the National Basic Research Program of China under Grant No 2015CB921502the National Natural Science Foundation of China under Grant Nos 11474184 and 11174183+4 种基金the Program for New Century Excellent Talents of China under Grant No NCET-10-0541the Scientific Research Foundation for Returned Overseas Chinese Scholars under Grant No B13029the Natural Science Foundation of Shandong Province under Grant No JQ201201the Doctorate Foundation of Shandong Province under Grant No BS2013CL042the Young Scientists Fund of the National Natural Science Foundation of China under Grant No 11204164
文摘The low Gilbert damping factor, which is usually measured by ferromagnetic resonance, is crucial in spintronic applications. Two-magnon scattering occurs when the orthogonMity of the ferromagnetic resonance mode and other degenerate spin wave modes was broken by magnetic anisotropy, voids, second phase, surface defects, etc., which is important in analysis of ferromagnetic resonance linewidth. Direct fitting to linewidth with Gilbert damping is advisable only when the measured linewidth is a linear function of measuring frequency in a broad band measurement. We observe the nonlinear ferromagnetic resonance linewidth of Co2MnSi thin films with respect to measuring frequency in broad band measurement. Experimental data could be well fitted with the model including two-magnon scattering with no fixed parameters. The fitting results show that two-magnon scattering results in the nonlinear linewidth behavior, and the Gilbert damping factor is much smaller than reported ones, indicating that our Co2MnSi films are more suitable for the applications of spin transfer torque.
基金Project supported by the National Basic Research Program of China(Grant No.2015CB921502)the National Natural Science Foundation of China(Grant Nos.11474184 and 11627805)+1 种基金the 111 Project,China(Grant No.B13029)the Fundamental Research Funds of Shandong University,China
文摘The spin transparency at the normal/ferromagnetic metal （NM/FM） interface was studied in PffYIG/Cu/FM multilayers. The spin current generated by the spin Hall effect （SHE） in Pt flows into Cu/FM due to magnetic insulator YIG blocking charge current and transmitting spin current via the magnon current. Therefore, the nonlocal voltage induced by an inverse spin Hall effect （ISHE） in FM can be detected. With the magnetization of FM parallel or antiparallel to the spin polarization of pure spin currents （σsc）, the spin-independent nonlocal voltage is induced. This indicates that the spin transparency at the Cu/FM interface is spin-independent, which demonstrates that the influence of spin-dependent electro-chemical potential due to spin accumulation on the interfacial spin transparency is negligible. Furthermore, a larger spin Hall angle of Fe20Ni80 （Py） than that of Ni is obtained from the nonlocal voltage measurements.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.50971080,11174183,and 50901043)the Program for New Century Excellent Talents of China(Grant No.NCET-10-0541)+3 种基金the Scientific Research Foundation for Returned Overseas Chinese Scholars,111 Project(Grant No.B13029)the Natural Science Foundation of Shandong Province,China(Grant No.JQ201201)the Doctorate Foundation of Shandong Province,China(Grant No.BS2013CL042)the Young Scientists Fund of the National Natural Science Foundation of China(Grant No.11204164)
文摘Copper phthalocyanine junctions, fabricated by magnetron sputtering and evaporating methods, show multi-polar （unipolar and bipolar） resistance switching and the memory effect. The multi-polar resistance switching has not been observed simultaneously in one organic material before. With both electrodes being cobalt, the unipolar resistance switching is universal. The high resistance state is switched to the low resistance state when the bias reaches the set voltage. Generally, the set voltage increases with the thickness of copper phthalocyanine and decreases with increasing dwell time of bias. Moreover, the low resistance state could be switched to the high resistance state by absorbing the phonon energy. The stability of the low resistance state could be tuned by different electrodes. In Au/copper phthalocyanine/Co system, the low resistance state is far more stable, and the bipolar resistance switching is found. Temperature dependence of electrical transport measurements demonstrates that there are no obvious differences in the electrical transport mechanism before and after the resistance switching. They fit quite well with Mott variable range hopping theory. The effect of A1203 on the resistance switching is excluded by control experiments. The holes trapping and detrapping in copper phthalocyanine layer are responsible for the resistance switching, and the interfacial effect between electrodes and copper phthalocyanine layer affects the memory effect.
基金Supported by the National Basic Research Program of China under Grant No 2015CB921502the National Natural Science Foundation of China under Grant Nos 11474184 and 11174183+3 种基金the 111 Project under Grant No B13029the Natural Science Foundation of Shandong Province under Grant No JQ201201the Doctorate Foundation of Shandong Province under Grant No BS2013CL042the Young Scientists Fund of the National Natural Science Foundation of China under Grant No 11204164
文摘Co2MnSi thin films are made by magnetron sputtering onto MgO （001） substrates. The crystalline quality is improved by increasing depositing temperature and/or annealing temperature. The sample deposited at 550℃ and subsequently annealed at 550℃ （sample I） exhibits a pseudo-epitaxial growth with partially ordered L21 phase. Sample I shows a four-fold magnetic anisotropy, in addition to a relatively weak uniaxial anisotropy. The Gilbert damping factor of sample I is smaller than 0.001, much smaller than reported ones. The possible reasons responsible for the small Gilbert damping factor are discussed, including weak spin-orbit coupling, small density of states at Fermi level, and so on.
