A novel structure of low-voltage trigger silicon-controlled rectifiers(LVTSCRs) with low trigger voltage and high holding voltage is proposed for electrostatic discharge(ESD) protection. The proposed ESD protection de...A novel structure of low-voltage trigger silicon-controlled rectifiers(LVTSCRs) with low trigger voltage and high holding voltage is proposed for electrostatic discharge(ESD) protection. The proposed ESD protection device possesses an ESD implant and a floating structure. This improvement enhances the current discharge capability of the gate-grounded NMOS and weakens the current gain of the silicon-controlled rectifier current path. According to the simulation results, the proposed device retains a low trigger voltage characteristic of LVTSCRs and simultaneously increases the holding voltage to 5.53 V, providing an effective way to meet the ESD protection requirement of the 5 V CMOS process.展开更多
The non-Markov process exists widely in thermodymanic process,while it usually requires the packing of many transistors and memories with great system complexity in a traditional device structure to minic such functio...The non-Markov process exists widely in thermodymanic process,while it usually requires the packing of many transistors and memories with great system complexity in a traditional device structure to minic such functions.Two-dimensional(2D)material-based resistive random access memory(RRAM)devices have the potential for next-generation computing systems with much-reduced complexity.Here,we achieve a non-Markov chain in an individual RRAM device based on 2D mineral material mica with a vertical metal/mica/metal structure.We find that the potassium ions(K+)in 2D mica gradually move in the direction of the applied electric field,making the initially insulating mica conductive.The accumulation of K+is changed by an electric field,and the 2D-mica RRAM has both single and double memory windows,a high on/off ratio,decent stability,and repeatability.This is the first time a non-Markov chain process has been established in a single RRAM,in which the movement of K+is dependent on the stimulated voltage as well as their past states.This work not only uncovers an intrinsic inner ionic conductivity of 2D mica,but also opens the door for the production of such RRAM devices with numerous functions and applications.展开更多
基金supported by the National Natural Science Foundation of China (Grant No. 61904110)。
文摘A novel structure of low-voltage trigger silicon-controlled rectifiers(LVTSCRs) with low trigger voltage and high holding voltage is proposed for electrostatic discharge(ESD) protection. The proposed ESD protection device possesses an ESD implant and a floating structure. This improvement enhances the current discharge capability of the gate-grounded NMOS and weakens the current gain of the silicon-controlled rectifier current path. According to the simulation results, the proposed device retains a low trigger voltage characteristic of LVTSCRs and simultaneously increases the holding voltage to 5.53 V, providing an effective way to meet the ESD protection requirement of the 5 V CMOS process.
基金This work was supported by the National Natural Science Foundation of China(51920105002,51991340,51722206,and 51991343)Guangdong Innovative and Entrepreneurial Research Team Program(2017ZT07C341)+1 种基金the Bureau of Industry and Information Technology of Shenzhen for the“2017 Graphene Manufacturing Innovation Center Project”(201901171523)the Shenzhen Basic Research Program(JCYJ20200109144620815 and JCYJ20200109144616617).
文摘The non-Markov process exists widely in thermodymanic process,while it usually requires the packing of many transistors and memories with great system complexity in a traditional device structure to minic such functions.Two-dimensional(2D)material-based resistive random access memory(RRAM)devices have the potential for next-generation computing systems with much-reduced complexity.Here,we achieve a non-Markov chain in an individual RRAM device based on 2D mineral material mica with a vertical metal/mica/metal structure.We find that the potassium ions(K+)in 2D mica gradually move in the direction of the applied electric field,making the initially insulating mica conductive.The accumulation of K+is changed by an electric field,and the 2D-mica RRAM has both single and double memory windows,a high on/off ratio,decent stability,and repeatability.This is the first time a non-Markov chain process has been established in a single RRAM,in which the movement of K+is dependent on the stimulated voltage as well as their past states.This work not only uncovers an intrinsic inner ionic conductivity of 2D mica,but also opens the door for the production of such RRAM devices with numerous functions and applications.
