Gallium oxide （Ga203） films were deposited on singlecrystalline sapphire （0001） substrate by radio frequency （RF） magnetron sputtering technique in the temperature range of 300--500 ℃. The microstructure of the...Gallium oxide （Ga203） films were deposited on singlecrystalline sapphire （0001） substrate by radio frequency （RF） magnetron sputtering technique in the temperature range of 300--500 ℃. The microstructure of the fl-Ga203 films were investigated in detail using X-ray diffractometer （XRD） and scanning electron microscope （SEM）. The results show that the film prepared at 500℃ exhibits the best crystallinity with a monoclinic structure （fl-Ga203）. Structure analysis reveals a clear out-of-plane orientation offl-Ga203 （201） II A1203 （0001）. The average transmittance of these films in the visible wavelength range exceeds 90%, and the optical band gap of the films varies from 4.68 eV to 4.94 eV which were measured by an ultraviolet-visible-near infrared （UV-vis-NIR） spectrophotometer. Therefore, it is hopeful that the fl-Ga203 film can be used in the UV optoelectronic devices.展开更多
Indium oxide(In_2O_3) films were prepared on Al_2O_3(0001) substrates at 700 °C by metal-organic chemical vapor deposition(MOCVD).Then the samples were annealed at 800 °C,900 °C and 1 000 °C,respec...Indium oxide(In_2O_3) films were prepared on Al_2O_3(0001) substrates at 700 °C by metal-organic chemical vapor deposition(MOCVD).Then the samples were annealed at 800 °C,900 °C and 1 000 °C,respectively.The X-ray diffraction(XRD) analysis reveals that the samples were polycrystalline films before and after annealing treatment.Triangle or quadrangle grains can be observed,and the corner angle of the grains becomes smooth after annealing.The highest Hall mobility is obtained for the sample annealed at 900 °C with the value about 24.74 cm^2·V^(-1)·s^(-1).The average transmittance for the films in the visible range is over 90%.The optical band gaps of the samples are about 3.73 e V,3.71 e V,3.70 eV and 3.69 eV corresponding to the In_2O_3 films deposited at 700 °C and annealed at 800 °C,900 °C and 1 000 °C,respectively.展开更多
Gallium oxide(Ga2O3) thin films were prepared on Si substrate by magnetron sputtering. The obtained samples were comprehensively characterized by X-ray photoelectron spectroscopy(XPS) and scanning electron microscope(...Gallium oxide(Ga2O3) thin films were prepared on Si substrate by magnetron sputtering. The obtained samples were comprehensively characterized by X-ray photoelectron spectroscopy(XPS) and scanning electron microscope(SEM). Ti, Pt, Ni and AZO were deposited on the Ga2O3 thin films as electrodes. This paper mainly studies the metal-semiconductor contact formed by these four materials on the films and the influence of annealing at 500℃ on the metal-semiconductor contact. The I-V characteristics show a good linear relationship, which indicates ohmic contact between Ga2O3 and other electrodes.展开更多
基金supported by the National Natural Science Foundation of China(Nos.61274113,61404091,61505144,51502203 and 51502204)the Opening Fund of Key Laboratory of Silicon Device Technology in Chinese Academy of Sciencesthe Tianjin Natural Science Foundation(Nos.14JCZDJC31500 and 14JCQNJC00800)
文摘Gallium oxide （Ga203） films were deposited on singlecrystalline sapphire （0001） substrate by radio frequency （RF） magnetron sputtering technique in the temperature range of 300--500 ℃. The microstructure of the fl-Ga203 films were investigated in detail using X-ray diffractometer （XRD） and scanning electron microscope （SEM）. The results show that the film prepared at 500℃ exhibits the best crystallinity with a monoclinic structure （fl-Ga203）. Structure analysis reveals a clear out-of-plane orientation offl-Ga203 （201） II A1203 （0001）. The average transmittance of these films in the visible wavelength range exceeds 90%, and the optical band gap of the films varies from 4.68 eV to 4.94 eV which were measured by an ultraviolet-visible-near infrared （UV-vis-NIR） spectrophotometer. Therefore, it is hopeful that the fl-Ga203 film can be used in the UV optoelectronic devices.
基金supported by the National Natural Science Foundation of China(Nos.6127411311204212 and 61404091)+5 种基金the Program for New Century Excellent Talents in University(No.NCET-11-1064)the Tianjin Natural Science Foundation(Nos.13JCYBJC1570013JCZDJC2610014JCZDJC31500 and 14JCQNJC00800)the Tianjin Science and Technology Developmental Funds of Universities and Colleges(Nos.2010070320130701 and 20130702)
文摘Indium oxide(In_2O_3) films were prepared on Al_2O_3(0001) substrates at 700 °C by metal-organic chemical vapor deposition(MOCVD).Then the samples were annealed at 800 °C,900 °C and 1 000 °C,respectively.The X-ray diffraction(XRD) analysis reveals that the samples were polycrystalline films before and after annealing treatment.Triangle or quadrangle grains can be observed,and the corner angle of the grains becomes smooth after annealing.The highest Hall mobility is obtained for the sample annealed at 900 °C with the value about 24.74 cm^2·V^(-1)·s^(-1).The average transmittance for the films in the visible range is over 90%.The optical band gaps of the samples are about 3.73 e V,3.71 e V,3.70 eV and 3.69 eV corresponding to the In_2O_3 films deposited at 700 °C and annealed at 800 °C,900 °C and 1 000 °C,respectively.
基金supported by the National Undergraduate Innovation and Entrepreneurship Training Program(No.201910060034)the Science and Technology Development Fund Program of Universities of Tianjin(No.2017KJ250)+2 种基金the Key Program of Tianjin Science and Technology Development Plan(No.18YFYSZC00180)the Tianjin Natural Science Foundation(Nos.18JCQNJC72700 and 18JCZDJC99800)the Tianjin Science and Technology Foundation(No.17ZXZNGX00090).
文摘Gallium oxide(Ga2O3) thin films were prepared on Si substrate by magnetron sputtering. The obtained samples were comprehensively characterized by X-ray photoelectron spectroscopy(XPS) and scanning electron microscope(SEM). Ti, Pt, Ni and AZO were deposited on the Ga2O3 thin films as electrodes. This paper mainly studies the metal-semiconductor contact formed by these four materials on the films and the influence of annealing at 500℃ on the metal-semiconductor contact. The I-V characteristics show a good linear relationship, which indicates ohmic contact between Ga2O3 and other electrodes.
