The electrochemical deposition technique was applied to achieve porous silicon （PS） surface passivated with Ag deposition for improving the properties of PS photoluminescence. The relation of Ag depositing forms to ...The electrochemical deposition technique was applied to achieve porous silicon （PS） surface passivated with Ag deposition for improving the properties of PS photoluminescence. The relation of Ag depositing forms to current density and the effect of PS hydrophilic surface on deposition uniformity were investigated. The experimental results indicated that there were two critical current densities （maximum and minimum） in which Ag was absent and electroplated on PS surface correspondingly, and the range of current density for deposition of Ag on porous silicon was from 50 μA/cm^2 to 400 μA/cm^2. The process of changing PS surface from hydrophobic into hydrophilic had positive effect on Ag deposition uniformity. Under the same experimental conditions, PS hydrophobic surface presented uneven Ag deposition.However, hydrophilic surface treated with SC-1 solution was even. Finally, the effect of PS surface passivation with Ag even deposition on photoluminescence intensity and stabilization of PS was studied. It was discovered that Ag passivation inhibited the degradation of PL intensity effectively. In addition, excessive Ag deposition had a quenching effect on room-temperature visible photoluminescence of PS.展开更多
Using cetyltrimethylammonium bromide （CTAB） as the template agent, cerium nitrate as the cerium resource, yttrium nitrate as the yttrium resource, and ammonium carbonate as the precipitating agent, mesoporous CeO2 p...Using cetyltrimethylammonium bromide （CTAB） as the template agent, cerium nitrate as the cerium resource, yttrium nitrate as the yttrium resource, and ammonium carbonate as the precipitating agent, mesoporous CeO2 powders doped with different yttrium contents were successfully synthesized using a chemical precipitation method, under an alkalescent condition. Properties of the obtained samples were characterized and analyzed with X-ray diffraction （XRD）, energy dispersive analysis of X-rays （EDAX）, transmission electron microscopy （TEM）, infrared （IR） absorbance, and the BET method. For the prepared samples with 20% （molar ratio） Y-doped content, a BET specific surface area of 106. 6 m^2 · g^- 1, with an average pore size of3~27 nm were obtained. XRD patterns showed that the doped samples were with a cubic fluorite structure. TEM micrographs revealed that the doped samples showed a spherical morphology with a diameter ranging from 20 to 30 nm and a round pore shape. IR results indicated that the Ce-O-Ce vibration intensity decreased as the Y-doped content increased. N2 adsorption-desorption isotherms showed that the samples possessed typical mesopore characteristics. The average pore size of the samples decreased alter mesoporous CeO2 was doped with yttrium, and the average pore size decreased largely as the Y-doped content increased.展开更多
The electrochemical behavior of silicon wafer in alkaline slurry with nano-sized CeO2 abrasive was investigated.The variations of corrosion potential(φcorr)and corrosion current density(Jcorr)of the P-type(100)silico...The electrochemical behavior of silicon wafer in alkaline slurry with nano-sized CeO2 abrasive was investigated.The variations of corrosion potential(φcorr)and corrosion current density(Jcorr)of the P-type(100)silicon wafer with the slurry pH value and the concentration of abrasive CeO2 were studied by polarization curve technologies.The dependence of the polishing rate on the pH and the concentration of CeO2 in slurries during chemical mechanical polishing(CMP)were also studied.It is discovered that there is a large change of φcorr and Jcorr when slurry pH is altered and the Jcorr reaches the maximum(1.306 μA/cm2)at pH 10.5 when the material removal rate(MRR)comes to the fastest value.The Jcorr increases gradually from 0.994 μA/cm2 with 1% CeO2 to 1.304 μA/cm2 with 3% CeO2 and reaches a plateau with the further increase of CeO2 concentration.There is a considerable MRR in the slurry with 3% CeO2 at pH 10.5.The coherence between Jcorr and MRR elucidates that the research on the electrochemical behavior of silicon wafers in the alkaline slurry could offer theoretic guidance on silicon polishing rate and ensure to adjust optimal components of slurry.展开更多
文摘The electrochemical deposition technique was applied to achieve porous silicon （PS） surface passivated with Ag deposition for improving the properties of PS photoluminescence. The relation of Ag depositing forms to current density and the effect of PS hydrophilic surface on deposition uniformity were investigated. The experimental results indicated that there were two critical current densities （maximum and minimum） in which Ag was absent and electroplated on PS surface correspondingly, and the range of current density for deposition of Ag on porous silicon was from 50 μA/cm^2 to 400 μA/cm^2. The process of changing PS surface from hydrophobic into hydrophilic had positive effect on Ag deposition uniformity. Under the same experimental conditions, PS hydrophobic surface presented uneven Ag deposition.However, hydrophilic surface treated with SC-1 solution was even. Finally, the effect of PS surface passivation with Ag even deposition on photoluminescence intensity and stabilization of PS was studied. It was discovered that Ag passivation inhibited the degradation of PL intensity effectively. In addition, excessive Ag deposition had a quenching effect on room-temperature visible photoluminescence of PS.
基金Project supported by the International Cooperation of Science and Technology Ministry PRC (2005DFBA028)the National Natural Science Foundation of China (59925412)
文摘Using cetyltrimethylammonium bromide （CTAB） as the template agent, cerium nitrate as the cerium resource, yttrium nitrate as the yttrium resource, and ammonium carbonate as the precipitating agent, mesoporous CeO2 powders doped with different yttrium contents were successfully synthesized using a chemical precipitation method, under an alkalescent condition. Properties of the obtained samples were characterized and analyzed with X-ray diffraction （XRD）, energy dispersive analysis of X-rays （EDAX）, transmission electron microscopy （TEM）, infrared （IR） absorbance, and the BET method. For the prepared samples with 20% （molar ratio） Y-doped content, a BET specific surface area of 106. 6 m^2 · g^- 1, with an average pore size of3~27 nm were obtained. XRD patterns showed that the doped samples were with a cubic fluorite structure. TEM micrographs revealed that the doped samples showed a spherical morphology with a diameter ranging from 20 to 30 nm and a round pore shape. IR results indicated that the Ce-O-Ce vibration intensity decreased as the Y-doped content increased. N2 adsorption-desorption isotherms showed that the samples possessed typical mesopore characteristics. The average pore size of the samples decreased alter mesoporous CeO2 was doped with yttrium, and the average pore size decreased largely as the Y-doped content increased.
基金Project(2005DFBA028)supported by the International Cooperation of Science and Technology Ministry of ChinaProject(LA07023)supported by the National Undergraduate Innovative Experiment Plan
文摘The electrochemical behavior of silicon wafer in alkaline slurry with nano-sized CeO2 abrasive was investigated.The variations of corrosion potential(φcorr)and corrosion current density(Jcorr)of the P-type(100)silicon wafer with the slurry pH value and the concentration of abrasive CeO2 were studied by polarization curve technologies.The dependence of the polishing rate on the pH and the concentration of CeO2 in slurries during chemical mechanical polishing(CMP)were also studied.It is discovered that there is a large change of φcorr and Jcorr when slurry pH is altered and the Jcorr reaches the maximum(1.306 μA/cm2)at pH 10.5 when the material removal rate(MRR)comes to the fastest value.The Jcorr increases gradually from 0.994 μA/cm2 with 1% CeO2 to 1.304 μA/cm2 with 3% CeO2 and reaches a plateau with the further increase of CeO2 concentration.There is a considerable MRR in the slurry with 3% CeO2 at pH 10.5.The coherence between Jcorr and MRR elucidates that the research on the electrochemical behavior of silicon wafers in the alkaline slurry could offer theoretic guidance on silicon polishing rate and ensure to adjust optimal components of slurry.
