采用电子束蒸镀方法在Si(100)衬底上沉积了ZnO:Al(ZAO)薄膜.在氧气气氛下对ZnO:Al薄膜进行了退火处理,退火温度的范围为400～800℃.X射线衍射(XRD)图样表明所制备的ZnO:Al薄膜具有六方结构,为c轴(002)择优取向的多晶薄膜.用Van der Pau...采用电子束蒸镀方法在Si(100)衬底上沉积了ZnO:Al(ZAO)薄膜.在氧气气氛下对ZnO:Al薄膜进行了退火处理,退火温度的范围为400～800℃.X射线衍射(XRD)图样表明所制备的ZnO:Al薄膜具有六方结构,为c轴(002)择优取向的多晶薄膜.用Van der Pauw法测量了ZAO薄膜的电学特性,结果显示其电导率在500℃达到最大值.测量了ZAO薄膜的室温微区光致发光和变温发光光谱,观测到了ZnO自由激子、束缚在中性施主中心(D0)上的束缚激子以及束缚在离化施主中心(D+0)上的束缚激子发射.展开更多
Transient memories,which can physically disappear without leaving traceable remains over a period of normal operation,are attracting increasing attention for potential applications in the fields of data security and g...Transient memories,which can physically disappear without leaving traceable remains over a period of normal operation,are attracting increasing attention for potential applications in the fields of data security and green electronics.Resistive random access memory(RRAM)is a promising candidate for next-generation memory.In this context,biocompatible l-carrageenan(l-car),extracted from natural seaweed,is introduced for the fabrication of RRAM devices(Ag/l-car/Pt).Taking advantage of the complexation processes between the functional groups(C–O–C,C–O–H,et al.)and Ag metal ions,a lower migration barrier of Ag ions and a high-speed switching(22.2 ns for SET operation/26 ns for RESET operation)were achieved,resulting in an ultralow power consumption of 56 fJ.And the prepared Ag/l-car/Pt RRAM devices also revealed the capacities of multilevel storage and flexibility.In addition,thanks to the hydrophilic groups of l-car molecule,the RRAM devices can be rapidly dissolved in deionized(DI)water within 13 minutes,showing excellent transient characteristics.This work demonstrates that l-car based RRAM devices have great potential for applications in secure storage applications,flexible electronics and transient electronics.展开更多
文摘采用电子束蒸镀方法在Si(100)衬底上沉积了ZnO:Al(ZAO)薄膜.在氧气气氛下对ZnO:Al薄膜进行了退火处理,退火温度的范围为400～800℃.X射线衍射(XRD)图样表明所制备的ZnO:Al薄膜具有六方结构,为c轴(002)择优取向的多晶薄膜.用Van der Pauw法测量了ZAO薄膜的电学特性,结果显示其电导率在500℃达到最大值.测量了ZAO薄膜的室温微区光致发光和变温发光光谱,观测到了ZnO自由激子、束缚在中性施主中心(D0)上的束缚激子以及束缚在离化施主中心(D+0)上的束缚激子发射.
基金Project supported by National Natural Science Foundation of China(50725205,60907016)Science Foundation for Young Scholars of Jilin Province,China(20080102)Cultivation Fund of NENU(NENU-STC08001)~~
基金supported financially by the National Key Research and Development Program of China(Grant No.2023YFB4402301)the National Science Fund for Distinguished Young Scholars(Grant No.52025022)+3 种基金the National Natural Science Foundation of China(Grant Nos.U19A2091,62004016,51732003,52072065,11974072,52372137,and 52272140)the“111”Project(Grant No.B13013)the Fundamental Research Funds for the Central Universities(Grant Nos.2412022QD036 and 2412023YQ004)the funding from Jilin Province(Grant Nos.20210201062GX,20220502002GH,20230402072GH,20230101017JC,and 20210509045RQ)。
文摘Transient memories,which can physically disappear without leaving traceable remains over a period of normal operation,are attracting increasing attention for potential applications in the fields of data security and green electronics.Resistive random access memory(RRAM)is a promising candidate for next-generation memory.In this context,biocompatible l-carrageenan(l-car),extracted from natural seaweed,is introduced for the fabrication of RRAM devices(Ag/l-car/Pt).Taking advantage of the complexation processes between the functional groups(C–O–C,C–O–H,et al.)and Ag metal ions,a lower migration barrier of Ag ions and a high-speed switching(22.2 ns for SET operation/26 ns for RESET operation)were achieved,resulting in an ultralow power consumption of 56 fJ.And the prepared Ag/l-car/Pt RRAM devices also revealed the capacities of multilevel storage and flexibility.In addition,thanks to the hydrophilic groups of l-car molecule,the RRAM devices can be rapidly dissolved in deionized(DI)water within 13 minutes,showing excellent transient characteristics.This work demonstrates that l-car based RRAM devices have great potential for applications in secure storage applications,flexible electronics and transient electronics.
