ZnO films grown by metal organic chemical vapor deposition at atmospheric pressure are annealed at 850℃ ,with the film surfaces exposed to air or covered by a sapphire wafer. The optical properties of the as-grown an...ZnO films grown by metal organic chemical vapor deposition at atmospheric pressure are annealed at 850℃ ,with the film surfaces exposed to air or covered by a sapphire wafer. The optical properties of the as-grown and the annealed samples are studied by photoluminescence （PL） spectroscopy. It is found that the air-exposure annealing effectively removes the hydrogen impurities from the ZnO films but greatly increases the deep-level emission. In the surface-covered annealed sample, an elimination of the hydrogen impurities is also observed, and the deep-level emission disappears completely. The free exciton emission is significantly enhanced in the ZnO film after surface-covered annealing.展开更多
文摘ZnO films grown by metal organic chemical vapor deposition at atmospheric pressure are annealed at 850℃ ,with the film surfaces exposed to air or covered by a sapphire wafer. The optical properties of the as-grown and the annealed samples are studied by photoluminescence （PL） spectroscopy. It is found that the air-exposure annealing effectively removes the hydrogen impurities from the ZnO films but greatly increases the deep-level emission. In the surface-covered annealed sample, an elimination of the hydrogen impurities is also observed, and the deep-level emission disappears completely. The free exciton emission is significantly enhanced in the ZnO film after surface-covered annealing.
