A physical model for scaling and optimizing InGaAs/InP double heterojunction bipolar transistors（DHBTs） based on hydrodynamic simulation is developed.The model is based on the hydrodynamic equation,which can accurat...A physical model for scaling and optimizing InGaAs/InP double heterojunction bipolar transistors（DHBTs） based on hydrodynamic simulation is developed.The model is based on the hydrodynamic equation,which can accurately describe non-equilibrium conditions such as quasi-ballistic transport in the thin base and the velocity overshoot effect in the depleted collector.In addition,the model accounts for several physical effects such as bandgap narrowing,variable effective mass,and doping-dependent mobility at high fields.Good agreement between the measured and simulated values of cutoff frequency,f t,and maximum oscillation frequency,f max,are achieved for lateral and vertical device scalings.It is shown that the model in this paper is appropriate for downscaling and designing InGaAs/InP DHBTs.展开更多
A self-built accurate and flexible large-signal model based on an analysis of the characteristics of InP double heterojunction bipolar transistors （DHBTs） is implemented as a seven-port symbolically defined device ...A self-built accurate and flexible large-signal model based on an analysis of the characteristics of InP double heterojunction bipolar transistors （DHBTs） is implemented as a seven-port symbolically defined device （SDD） in Agilent ADS. The model accounts for most physical phenomena incluuing the self-heating effect, Kirk effect, soft knee effect, base collector capacitance and collector transit time. The validity and the accuracy of the large-signal model are assessed by comparing the simulation with the measurement of DC, multi-bias small signal S parameters for InP DHBTs.展开更多
The importance of high-performance,low-cost and millimeter-wave transmitters for digital communications and radar applications is increasing.The design and performance of a Ka-band balanced in-phase and quadrature-ph...The importance of high-performance,low-cost and millimeter-wave transmitters for digital communications and radar applications is increasing.The design and performance of a Ka-band balanced in-phase and quadrature-phase（I-Q）type vector modulator,using GaAs heterojunction bipolar transistors（HBTs）as switching elements,are presented.The balanced technique is used to remove the parasitics of the HBTs to result in near perfect constellations.Measurements of the monolithic microwave integrated circuit（MMIC）chip with a size of 1.89×2.26 mm^2 demonstrate an amplitude error below 1.5 dB and the phase error within 3°between 26 and 40 GHz except for a singular point at 35.6 GHz.The results show that the technique is suitable for millimeter-wave digital communications.展开更多
A two-stage MMIC power amplifier has been realized by use of a l-μm InP double heterojunction bipolar transistor（DHBT）.The cascode structure,low-loss matching networks,and low-parasite cell units enhance the power ...A two-stage MMIC power amplifier has been realized by use of a l-μm InP double heterojunction bipolar transistor（DHBT）.The cascode structure,low-loss matching networks,and low-parasite cell units enhance the power gain.The optimum load impedance is determined from load-pull simulation.A coplanar waveguide transmission line is adopted for its ease of fabrication.The chip size is 1.5×1.7 mm^2 with the emitter area of 16×1μm×15μm in the output stage.Measurements show that small signal gain is more than 20 dB over 75.5-84.5 GHz and the saturated power is 16.9 dBm @ 79 GHz with gain of 15.2 dB.The high power gain makes it very suitable for medium power amplification.展开更多
A W-band frequency doubler MMIC is designed and fabricated using 1-μm InP DHBT technology. Ac tive halun is employed to transform the single-ended signal into differential output. Push-push configuration loaded with ...A W-band frequency doubler MMIC is designed and fabricated using 1-μm InP DHBT technology. Ac tive halun is employed to transform the single-ended signal into differential output. Push-push configuration loaded with harmonic resonant network is utilized to acquire the second harmonic frequency. A multi-stage differential structure improves the conversion gain and suppresses the fundamental frequency. The MMIC occupies an area of 0.55 x 0.5 mm2 with 18 DHBTs integrated. Measurements show that the output power is above 5.8 dBm with the suppression of fundamental frequency below -16 dBc and the conversion Rain above 4.7 dB over 75-80 GHz.展开更多
A large signal model for InP/InGaAs double heterojunction bipolar transistors including thermal effects has been reported,which demonstrated good agreements of simulations with measurements.On the basis of the previou...A large signal model for InP/InGaAs double heterojunction bipolar transistors including thermal effects has been reported,which demonstrated good agreements of simulations with measurements.On the basis of the previous model in which the double heterojunction effect,current blocking effect and high current effect in current expression are considered,the effect of bandgap narrowing with temperature has been considered in transport current while a formula for model parameters as a function of temperature has been developed.This model is implemented by Verilog-A and embedded in ADS.The proposed model is verified with DC and large signal measurements.展开更多
An 88 nm gate-length In0.53Ga0.47As/In0.52Alo.48As InP-based high electron mobility transistor （HEMT） was successfully fabricated with a gate width of 2× 50 μm and source-drain space of 2.4μm. The T-gate was ...An 88 nm gate-length In0.53Ga0.47As/In0.52Alo.48As InP-based high electron mobility transistor （HEMT） was successfully fabricated with a gate width of 2× 50 μm and source-drain space of 2.4μm. The T-gate was defined by electron beam lithography in a trilayer of PMMA/A1/UVIII. The exposure dose and the development time were optimized, and followed by an appropriate residual resist removal process. These devices also demonstrated excellent DC and RF characteristics： the extrinsic maximum transconductance, the full channel cur- rent, the threshold voltage, the current gain cutoff frequency and the maximum oscillation frequency of the HEMTs were 765 mS/mm, 591 mA/mm, -0.5 V, 150 GHz and 201 GHz, respectively. The HEMTs are promising for use in millimeter-wave integrated circuits.展开更多
AW-bandtwo-stageamplifierMMIChasbeendevelopedusingafullypassivated 2 × 20 μm gate-width and 0.15 μm gate-length InP-based high electron mobility transistor （HEMT） technology. The two-stage amplifier has been ...AW-bandtwo-stageamplifierMMIChasbeendevelopedusingafullypassivated 2 × 20 μm gate-width and 0.15 μm gate-length InP-based high electron mobility transistor （HEMT） technology. The two-stage amplifier has been realized in combination with a coplanar waveguide technique and cascode topology, thus leading to a compact chip-size of 1.85 × 0.932 mm^2 and an excellent small-signal gain of 25.7 dB at 106 GHz. Additionally, an inter-digital coupling capacitor blocks low-frequency signal, thereby enhancing the stability of the amplifier. The successful design of the two-stage amplifier MMIC indicates that InP HEMT technology has a great potential for W-band applications.展开更多
We fabricated 88 nm gate-length InP-based InAlAs/InGaAs high electron mobility transistors（HEMTs） with a current gain cutoff frequency of 100 GHz and a maximum oscillation frequency of 185 GHz.The characteristics of...We fabricated 88 nm gate-length InP-based InAlAs/InGaAs high electron mobility transistors（HEMTs） with a current gain cutoff frequency of 100 GHz and a maximum oscillation frequency of 185 GHz.The characteristics of HEMTs with side-etched region lengths（L_（Side）） of 300,412 and 1070 nm were analyzed.With the increase in L_（Side）,the kink effect became notable in the DC characteristics,which resulted from the surface state and the effect of impact ionization.The kink effect was qualitatively explained through energy band diagrams,and then eased off by reducing the L_（Side）.Meanwhile,the L_（Side） dependence of the radio frequency characteristics,which were influenced by the parasitic capacitance,as well as the parasitic resistance of the source and drain,was studied.This work will be of great importance in fabricating high-performance InP HEMTs.展开更多
基金Project supported by the National Basic Research Program of China (Grant No. 2010CB327502)
文摘A physical model for scaling and optimizing InGaAs/InP double heterojunction bipolar transistors（DHBTs） based on hydrodynamic simulation is developed.The model is based on the hydrodynamic equation,which can accurately describe non-equilibrium conditions such as quasi-ballistic transport in the thin base and the velocity overshoot effect in the depleted collector.In addition,the model accounts for several physical effects such as bandgap narrowing,variable effective mass,and doping-dependent mobility at high fields.Good agreement between the measured and simulated values of cutoff frequency,f t,and maximum oscillation frequency,f max,are achieved for lateral and vertical device scalings.It is shown that the model in this paper is appropriate for downscaling and designing InGaAs/InP DHBTs.
文摘A self-built accurate and flexible large-signal model based on an analysis of the characteristics of InP double heterojunction bipolar transistors （DHBTs） is implemented as a seven-port symbolically defined device （SDD） in Agilent ADS. The model accounts for most physical phenomena incluuing the self-heating effect, Kirk effect, soft knee effect, base collector capacitance and collector transit time. The validity and the accuracy of the large-signal model are assessed by comparing the simulation with the measurement of DC, multi-bias small signal S parameters for InP DHBTs.
基金Project supported by the State Key Development Program for Basic Research of China(No2010CB327505)
文摘The importance of high-performance,low-cost and millimeter-wave transmitters for digital communications and radar applications is increasing.The design and performance of a Ka-band balanced in-phase and quadrature-phase（I-Q）type vector modulator,using GaAs heterojunction bipolar transistors（HBTs）as switching elements,are presented.The balanced technique is used to remove the parasitics of the HBTs to result in near perfect constellations.Measurements of the monolithic microwave integrated circuit（MMIC）chip with a size of 1.89×2.26 mm^2 demonstrate an amplitude error below 1.5 dB and the phase error within 3°between 26 and 40 GHz except for a singular point at 35.6 GHz.The results show that the technique is suitable for millimeter-wave digital communications.
基金Project supported by the National Basic Research Program of China(No.2010CB327502)
文摘A two-stage MMIC power amplifier has been realized by use of a l-μm InP double heterojunction bipolar transistor（DHBT）.The cascode structure,low-loss matching networks,and low-parasite cell units enhance the power gain.The optimum load impedance is determined from load-pull simulation.A coplanar waveguide transmission line is adopted for its ease of fabrication.The chip size is 1.5×1.7 mm^2 with the emitter area of 16×1μm×15μm in the output stage.Measurements show that small signal gain is more than 20 dB over 75.5-84.5 GHz and the saturated power is 16.9 dBm @ 79 GHz with gain of 15.2 dB.The high power gain makes it very suitable for medium power amplification.
基金supported by the National Basic Research Program of China(No.2010CB327502)
文摘A W-band frequency doubler MMIC is designed and fabricated using 1-μm InP DHBT technology. Ac tive halun is employed to transform the single-ended signal into differential output. Push-push configuration loaded with harmonic resonant network is utilized to acquire the second harmonic frequency. A multi-stage differential structure improves the conversion gain and suppresses the fundamental frequency. The MMIC occupies an area of 0.55 x 0.5 mm2 with 18 DHBTs integrated. Measurements show that the output power is above 5.8 dBm with the suppression of fundamental frequency below -16 dBc and the conversion Rain above 4.7 dB over 75-80 GHz.
基金supported by the State Key Development Program tor Basic Research of China(No.2010CB327504)
文摘A large signal model for InP/InGaAs double heterojunction bipolar transistors including thermal effects has been reported,which demonstrated good agreements of simulations with measurements.On the basis of the previous model in which the double heterojunction effect,current blocking effect and high current effect in current expression are considered,the effect of bandgap narrowing with temperature has been considered in transport current while a formula for model parameters as a function of temperature has been developed.This model is implemented by Verilog-A and embedded in ADS.The proposed model is verified with DC and large signal measurements.
文摘An 88 nm gate-length In0.53Ga0.47As/In0.52Alo.48As InP-based high electron mobility transistor （HEMT） was successfully fabricated with a gate width of 2× 50 μm and source-drain space of 2.4μm. The T-gate was defined by electron beam lithography in a trilayer of PMMA/A1/UVIII. The exposure dose and the development time were optimized, and followed by an appropriate residual resist removal process. These devices also demonstrated excellent DC and RF characteristics： the extrinsic maximum transconductance, the full channel cur- rent, the threshold voltage, the current gain cutoff frequency and the maximum oscillation frequency of the HEMTs were 765 mS/mm, 591 mA/mm, -0.5 V, 150 GHz and 201 GHz, respectively. The HEMTs are promising for use in millimeter-wave integrated circuits.
基金Project supported by the National Basic Research Program of China(Nos.2010CB327502,2010CB327505)the Advance Research Project(No.5130803XXXX)
文摘AW-bandtwo-stageamplifierMMIChasbeendevelopedusingafullypassivated 2 × 20 μm gate-width and 0.15 μm gate-length InP-based high electron mobility transistor （HEMT） technology. The two-stage amplifier has been realized in combination with a coplanar waveguide technique and cascode topology, thus leading to a compact chip-size of 1.85 × 0.932 mm^2 and an excellent small-signal gain of 25.7 dB at 106 GHz. Additionally, an inter-digital coupling capacitor blocks low-frequency signal, thereby enhancing the stability of the amplifier. The successful design of the two-stage amplifier MMIC indicates that InP HEMT technology has a great potential for W-band applications.
基金Project supported by the National Basic Research Program of China(No.2010CB327502)
文摘We fabricated 88 nm gate-length InP-based InAlAs/InGaAs high electron mobility transistors（HEMTs） with a current gain cutoff frequency of 100 GHz and a maximum oscillation frequency of 185 GHz.The characteristics of HEMTs with side-etched region lengths（L_（Side）） of 300,412 and 1070 nm were analyzed.With the increase in L_（Side）,the kink effect became notable in the DC characteristics,which resulted from the surface state and the effect of impact ionization.The kink effect was qualitatively explained through energy band diagrams,and then eased off by reducing the L_（Side）.Meanwhile,the L_（Side） dependence of the radio frequency characteristics,which were influenced by the parasitic capacitance,as well as the parasitic resistance of the source and drain,was studied.This work will be of great importance in fabricating high-performance InP HEMTs.
