The wavelength-dependent and frequency-dependent dielectric function of wurtzite-GaN is cMculated totally from fundamental parameters such as the lattice constant using Waiter's ab initio model. The errors occurring ...The wavelength-dependent and frequency-dependent dielectric function of wurtzite-GaN is cMculated totally from fundamental parameters such as the lattice constant using Waiter's ab initio model. The errors occurring in the cMculation are carefully reduced by/inear interpolation of energy data. The Kramers-Kronig transform of the real part of greater range is obtained by extrapolation of the reM part. The calculation is time-consuming but meaningful The long-wave results are similar to the experimental data of the photon and are useful for related investigation of properties of wide-gap semiconductors such as electron scattering like the Auger recombination and impact ionization.展开更多
基金Research Supported by Doctoral Fund of Ministry of Education of China(20101210120007)National Natural Science Foundation of China(No81001632)+1 种基金China Postdoctoral Science Foundation(20100480657)the Key Project of Chinese Ministry of Education(No210013)~~
基金Supported by the National Key Research and Development Program of China under Grant No 2016YFB0400102the National Basic Research Program of China under Grant Nos 2012CB3155605,2013CB632804,2014CB340002 and 2015CB351900+7 种基金the National Natural Science Foundation of China under Grant Nos 61574082,61210014,61321004,61307024 and 51561165012the High Technology Research and Development Program of China under Grant No 2015AA017101the Tsinghua University Student Research Training Projects under Grant No 1611T0157the Tsinghua University Initiative Scientific Research Program under Grant Nos 2013023Z09N and 2015THZ02-3the Open Fund of the State Key Laboratory on Integrated Optoelectronics under Grant No IOSKL2015KF10the CAEP Microsystem and THz Science and Technology Foundation under Grant No CAEPMT201505the Science Challenge Project under Grant No JCKY2016212A503the Guangdong Province Science and Technology Program under Grant No 2014B010121004
文摘The wavelength-dependent and frequency-dependent dielectric function of wurtzite-GaN is cMculated totally from fundamental parameters such as the lattice constant using Waiter's ab initio model. The errors occurring in the cMculation are carefully reduced by/inear interpolation of energy data. The Kramers-Kronig transform of the real part of greater range is obtained by extrapolation of the reM part. The calculation is time-consuming but meaningful The long-wave results are similar to the experimental data of the photon and are useful for related investigation of properties of wide-gap semiconductors such as electron scattering like the Auger recombination and impact ionization.