以硫化钠、氯化铜、氯化铟为原料,分别以乙醇、乙二醇、乙醇胺、乙二胺为溶剂,采用溶剂热法制备CuInS2纳米粉体,用X射线衍射仪（XRD）、场发射扫描电镜（FESEM）、透射电镜（TEM）、紫外可见–分光光度计（UV-Vis）分析该粉体的微观结...以硫化钠、氯化铜、氯化铟为原料,分别以乙醇、乙二醇、乙醇胺、乙二胺为溶剂,采用溶剂热法制备CuInS2纳米粉体,用X射线衍射仪（XRD）、场发射扫描电镜（FESEM）、透射电镜（TEM）、紫外可见–分光光度计（UV-Vis）分析该粉体的微观结构和光学性能,研究不同溶剂与反应温度对粉末结构与性能的影响。结果表明：在180℃下以乙醇胺或乙二胺为溶剂时,不仅有黄铜矿相CuInS2,还形成纤锌矿相CuInS2;以乙二醇或乙醇为溶剂时,所得粉末为黄铜矿相CuInS2。采用乙二胺为溶剂,当反应温度达到180℃时,粉体中出现部分纤锌矿相CuInS2,粉末呈颗粒状,颗粒尺寸为20~40 nm。采用溶剂热法与化学水浴沉积法相结合的工艺一步合成CuInS2薄膜,薄膜沿（112）晶面择优生长。CuInS2粉体和薄膜的光学带隙范围为1.35~1.56 e V。展开更多
A series of nanocrystalline SnO2 powders, doped with different Sb contents, were synthesized by route of alkoxides hydrolysis using SnCl4·5H2O and SbCl3 as starting materials and calcined at different temperature...A series of nanocrystalline SnO2 powders, doped with different Sb contents, were synthesized by route of alkoxides hydrolysis using SnCl4·5H2O and SbCl3 as starting materials and calcined at different temperatures. The microstructure and morphology of samples are investigated by XRD and TEM, the valence state changes of Sb in SnO2 crystal lattice is detected by Mssbauer spectroscopy and XPS.The resistivity of powders is examined with a mould of inside diameter d=10mm at a constant pressure. The results show that lightly-doping Sb is effective means of semiconducting of nanocrystalline SnO2. The ratio of Sb5+ to Sb3+ decreases with increasing Sb content in SnO2 crystal lattices and calcination temperature. The XPS diffraction confirms the same result as Mssbauer spectroscopy.展开更多
文摘以硫化钠、氯化铜、氯化铟为原料,分别以乙醇、乙二醇、乙醇胺、乙二胺为溶剂,采用溶剂热法制备CuInS2纳米粉体,用X射线衍射仪（XRD）、场发射扫描电镜（FESEM）、透射电镜（TEM）、紫外可见–分光光度计（UV-Vis）分析该粉体的微观结构和光学性能,研究不同溶剂与反应温度对粉末结构与性能的影响。结果表明：在180℃下以乙醇胺或乙二胺为溶剂时,不仅有黄铜矿相CuInS2,还形成纤锌矿相CuInS2;以乙二醇或乙醇为溶剂时,所得粉末为黄铜矿相CuInS2。采用乙二胺为溶剂,当反应温度达到180℃时,粉体中出现部分纤锌矿相CuInS2,粉末呈颗粒状,颗粒尺寸为20~40 nm。采用溶剂热法与化学水浴沉积法相结合的工艺一步合成CuInS2薄膜,薄膜沿（112）晶面择优生长。CuInS2粉体和薄膜的光学带隙范围为1.35~1.56 e V。
文摘A series of nanocrystalline SnO2 powders, doped with different Sb contents, were synthesized by route of alkoxides hydrolysis using SnCl4·5H2O and SbCl3 as starting materials and calcined at different temperatures. The microstructure and morphology of samples are investigated by XRD and TEM, the valence state changes of Sb in SnO2 crystal lattice is detected by Mssbauer spectroscopy and XPS.The resistivity of powders is examined with a mould of inside diameter d=10mm at a constant pressure. The results show that lightly-doping Sb is effective means of semiconducting of nanocrystalline SnO2. The ratio of Sb5+ to Sb3+ decreases with increasing Sb content in SnO2 crystal lattices and calcination temperature. The XPS diffraction confirms the same result as Mssbauer spectroscopy.
