A novel patterned-SOI LDMOSFET with a silicon window beneath the p-type channel was designed and fabricated for RF power amplifier applications. This novel device has good DC and RF characteristics. It has no kink eff...A novel patterned-SOI LDMOSFET with a silicon window beneath the p-type channel was designed and fabricated for RF power amplifier applications. This novel device has good DC and RF characteristics. It has no kink effect on output performance,an off-state breakdown of up to 13V,and fT = 6GHz at DC bias of Vg = Vd = 3.6V.At 1.5GHz,a power-added efficiency (PAE) of 50% is achieved with an output power of up to 27dBm from this device.展开更多
提出一种适用于反型层RF SOI MOS变容管行为表征模型。在BSIMSOI的基础上,模型采用简化的衬底模型和外围射频寄生模型来表征变容管的射频寄生效应,同时采用T、π互转的方式提出参数提取算法。模型最终应用到华虹宏力SOI工艺提供的不同栅...提出一种适用于反型层RF SOI MOS变容管行为表征模型。在BSIMSOI的基础上,模型采用简化的衬底模型和外围射频寄生模型来表征变容管的射频寄生效应,同时采用T、π互转的方式提出参数提取算法。模型最终应用到华虹宏力SOI工艺提供的不同栅指,每栅指长度为1.6μm、宽度为5μm的MOS变容管器件,并且在15 GHz以下,模型与测量数据的CV、QV以及S参数有较好的拟合。在高频情况下,模型既保证了精度又解决了参数提取困难等问题。展开更多
文摘A novel patterned-SOI LDMOSFET with a silicon window beneath the p-type channel was designed and fabricated for RF power amplifier applications. This novel device has good DC and RF characteristics. It has no kink effect on output performance,an off-state breakdown of up to 13V,and fT = 6GHz at DC bias of Vg = Vd = 3.6V.At 1.5GHz,a power-added efficiency (PAE) of 50% is achieved with an output power of up to 27dBm from this device.
文摘提出一种适用于反型层RF SOI MOS变容管行为表征模型。在BSIMSOI的基础上,模型采用简化的衬底模型和外围射频寄生模型来表征变容管的射频寄生效应,同时采用T、π互转的方式提出参数提取算法。模型最终应用到华虹宏力SOI工艺提供的不同栅指,每栅指长度为1.6μm、宽度为5μm的MOS变容管器件,并且在15 GHz以下,模型与测量数据的CV、QV以及S参数有较好的拟合。在高频情况下,模型既保证了精度又解决了参数提取困难等问题。