本文研究了采用微波等离子体辅助化学气相沉积方法在几种碳化物形成元素衬底上生长金刚石薄膜的可能性。用扫描电镜和 X 射线衍射等手段对薄膜的形貌和结构进行了分析。结果表明,在620～650℃的沉积条件下,各衬底表面均可生长出晶体特...本文研究了采用微波等离子体辅助化学气相沉积方法在几种碳化物形成元素衬底上生长金刚石薄膜的可能性。用扫描电镜和 X 射线衍射等手段对薄膜的形貌和结构进行了分析。结果表明,在620～650℃的沉积条件下,各衬底表面均可生长出晶体特征良好的金刚石薄膜;在衬底和薄膜之间均存在一到二种碳化物过渡层,其组成与较高温度沉积条件下获得的碳化物有一定区别,趋于形成碳含量较低的碳化物相。在若干种衬底上,如 Mo、Nb、Ta、Si 和 Ti 上,获得了与基体结合良好的金刚石薄膜。展开更多
Low-temperature deposition of diamond thin films in the range of 280￣445℃ has been successfully carried out by microwave plasma-assisted CVD method.At lower deposition temperatures (280￣445℃),the large increase in...Low-temperature deposition of diamond thin films in the range of 280￣445℃ has been successfully carried out by microwave plasma-assisted CVD method.At lower deposition temperatures (280￣445℃),the large increase in the nucleation density and great improvement in the average surfae roughness of the diamond were observed. Results of low temperature deposition and characterization of diamond thin films obtained are presented.展开更多
文摘本文研究了采用微波等离子体辅助化学气相沉积方法在几种碳化物形成元素衬底上生长金刚石薄膜的可能性。用扫描电镜和 X 射线衍射等手段对薄膜的形貌和结构进行了分析。结果表明,在620～650℃的沉积条件下,各衬底表面均可生长出晶体特征良好的金刚石薄膜;在衬底和薄膜之间均存在一到二种碳化物过渡层,其组成与较高温度沉积条件下获得的碳化物有一定区别,趋于形成碳含量较低的碳化物相。在若干种衬底上,如 Mo、Nb、Ta、Si 和 Ti 上,获得了与基体结合良好的金刚石薄膜。
文摘Low-temperature deposition of diamond thin films in the range of 280￣445℃ has been successfully carried out by microwave plasma-assisted CVD method.At lower deposition temperatures (280￣445℃),the large increase in the nucleation density and great improvement in the average surfae roughness of the diamond were observed. Results of low temperature deposition and characterization of diamond thin films obtained are presented.
