采用 L P- MOVPE在 Si O2 掩膜的 In P衬底上实现了高质量的 In Ga As P多量子阱 (MQW)的选择区域生长(SAG) .通过改变生长温度和生长压力 ,MQW的适用范围由 C波段扩展至 L 波段 ,即 MQW的光致发光波长从15 46 nm延展至 16 2 1nm.光致发...采用 L P- MOVPE在 Si O2 掩膜的 In P衬底上实现了高质量的 In Ga As P多量子阱 (MQW)的选择区域生长(SAG) .通过改变生长温度和生长压力 ,MQW的适用范围由 C波段扩展至 L 波段 ,即 MQW的光致发光波长从15 46 nm延展至 16 2 1nm.光致发光 (PL)测试表明 :在宽达 75 nm的波长范围内 ,MQW的质量与非选择生长的MQW质量相当 ,并成功制作出电吸收调制 DFB激光器 (EML) .展开更多
A new type strongly gain coupled (GC) DFB laser and a new type self alignment spot size converter (SA SSC) are proposed and successfully fabricated.The strongly GC DFB laser is monolithically integrated with the ...A new type strongly gain coupled (GC) DFB laser and a new type self alignment spot size converter (SA SSC) are proposed and successfully fabricated.The strongly GC DFB laser is monolithically integrated with the SA SSC with three step epitaxies.A high single mode yield and large side mode suppression ratio is obtained from the strongly GC DFB laser.A near circle far field pattern is obtained by using the SA SSC.展开更多
文摘采用 L P- MOVPE在 Si O2 掩膜的 In P衬底上实现了高质量的 In Ga As P多量子阱 (MQW)的选择区域生长(SAG) .通过改变生长温度和生长压力 ,MQW的适用范围由 C波段扩展至 L 波段 ,即 MQW的光致发光波长从15 46 nm延展至 16 2 1nm.光致发光 (PL)测试表明 :在宽达 75 nm的波长范围内 ,MQW的质量与非选择生长的MQW质量相当 ,并成功制作出电吸收调制 DFB激光器 (EML) .
文摘A new type strongly gain coupled (GC) DFB laser and a new type self alignment spot size converter (SA SSC) are proposed and successfully fabricated.The strongly GC DFB laser is monolithically integrated with the SA SSC with three step epitaxies.A high single mode yield and large side mode suppression ratio is obtained from the strongly GC DFB laser.A near circle far field pattern is obtained by using the SA SSC.
