We report an efficient white-light emission based on a single copolymer/InGaN hybrid light-emitting diode. The single copolymer consists of a conjugated polyfluorene backbone by incorporating 2,1,3-benzothiadiazole ...We report an efficient white-light emission based on a single copolymer/InGaN hybrid light-emitting diode. The single copolymer consists of a conjugated polyfluorene backbone by incorporating 2,1,3-benzothiadiazole （BT） and 4,7-bis（2-thienyl）-2,1,3-benzothiadiazole （DBT） as green and red light-emitting units, respectively. For the single copolymer/InGaN hybrid device, the Commission Internationale de 1＇Eclairage （CIE） coordinates, color temperature Tc and color rendering index Ra at 20mA are （0.323,0.329）, 5960K and 86, respectively. In comparison with the performance of red eopolymer PFO-DBT15 （DOF：DBT=85：15 with DOF being 9＇9- dioctylfluorene） and green copolymer PFO-BT35 （DOF：BT=-65：35） blend/InGaN hybrid white devices, it is concluded that the chemically doped copolymer hybridized device shows a higher emission intensity and spectral stability at a high driving current than the polymer blend.展开更多
In this paper full polymer thin-film transistors （PTFTs） based on Poly （acrylonitrile） （PAN） as the gate dielectric and poly （2-methoxy-5-（2＇-ethyl-hexyloxy）-1,4-phenylene-vinylene） （MEH-PPV） as the semic...In this paper full polymer thin-film transistors （PTFTs） based on Poly （acrylonitrile） （PAN） as the gate dielectric and poly （2-methoxy-5-（2＇-ethyl-hexyloxy）-1,4-phenylene-vinylene） （MEH-PPV） as the semiconductor layer were investigated by using different channel width/length ratios. Relatively high dielectric constant of the polymer dielectric layer （6.27） can remarkably reduce the threshold voltage of the transistors to below -3V. Hole field-effect mobility of MEH-PPV of the PTFTs was about 4.8×10^-4cm^2/Vs, and on/off current ratio was larger than 10^2, which was comparable with that of transistors with widely used Poly （4-vinyl phenol） （PVP） or SiO2 as gate dielectrics.展开更多
A strain-compensated InGaN quantum well（QW） active region employing a tensile AlGaN barrier is analyzed.Its spectral stability and efficiency droop for a dual-blue light-emitting diode（LED） are improved compared w...A strain-compensated InGaN quantum well（QW） active region employing a tensile AlGaN barrier is analyzed.Its spectral stability and efficiency droop for a dual-blue light-emitting diode（LED） are improved compared with those of the conventional InGaN/GaN QW dual-blue LEDs based on a stacking structure of two In0.18Ga0.82N/GaN QWs and two In0.12Ga0.88N/GaN QWs on the same sapphire substrate.It is found that the optimal performance is achieved when the Al composition of the strain-compensated AlGaN layer is 0.12 in blue QW and 0.21 in blue-violet QW.The improvement performance can be attributed to the strain-compensated InGaN-AlGaN/GaN QW,which can provide a better carrier confinement and effectively reduce leakage current.展开更多
This paper reports that the n-type organic thin-fihn transistors have been fabricated by using C60 as the active layer and polystyrene as the dielectric. The properties of insulator and the growth characteristic of C6...This paper reports that the n-type organic thin-fihn transistors have been fabricated by using C60 as the active layer and polystyrene as the dielectric. The properties of insulator and the growth characteristic of C60 film were carefully investigated. By choosing different source/drain electrodes, a device with good performance can be obtained. The highest electron field effect mobility about 1.15 cm2/（V. s） could reach when Barium was introduced as electrodes. Moreover, the C60 transistor shows a negligible ＇hysteresis effect＇ contributed to the hydroxyl-free of insulator. The result suggests that polymer dielectrics are promising in applications among n-type organic transistors.展开更多
This paper reports that highly transparent and low resistance tantalum-doped indium tin oxide （Ta-doped ITO） films contacted to p-type GaN have been prepared by the electron-beam evaporation technique. The Ta-doped ...This paper reports that highly transparent and low resistance tantalum-doped indium tin oxide （Ta-doped ITO） films contacted to p-type GaN have been prepared by the electron-beam evaporation technique. The Ta-doped ITO contacts become Ohmic with a specific contact resistance of $／sim 5.65／times 10^{ - 5}$$／Omega ／cdot$cm$^{2}$ and show the transmittance of $／sim $98% at a wavelength of 440nm when annealed at 500／du. Blue light emitting diodes （LEDs） fabricated with Ta-doped ITO p-type Ohmic contact layers give a forward-bias voltage of 3.21V at an injection current of 20mA. It further shows that the output power of LEDs with Ta-doped ITO contacts is enhanced 62% at 20mA in comparison with that of LEDs with conventional Ni/Au contacts展开更多
基金National Natural Science Foundation of China(61504066)Natural Science Foundation of Jiangsu Higher Education Institutions of China(15KJB430024)Natural Science Foundation of Jiangsu Province(BK20150838)~~
基金Supported by the Natural Science Foundation of Guangdong Province under Grant No 06300928 and 8251063101000007.
文摘We report an efficient white-light emission based on a single copolymer/InGaN hybrid light-emitting diode. The single copolymer consists of a conjugated polyfluorene backbone by incorporating 2,1,3-benzothiadiazole （BT） and 4,7-bis（2-thienyl）-2,1,3-benzothiadiazole （DBT） as green and red light-emitting units, respectively. For the single copolymer/InGaN hybrid device, the Commission Internationale de 1＇Eclairage （CIE） coordinates, color temperature Tc and color rendering index Ra at 20mA are （0.323,0.329）, 5960K and 86, respectively. In comparison with the performance of red eopolymer PFO-DBT15 （DOF：DBT=85：15 with DOF being 9＇9- dioctylfluorene） and green copolymer PFO-BT35 （DOF：BT=-65：35） blend/InGaN hybrid white devices, it is concluded that the chemically doped copolymer hybridized device shows a higher emission intensity and spectral stability at a high driving current than the polymer blend.
基金Project support by the National ＂973＂ Project of China （Grant No 2002CB613405）, the National Natural Science Foundation of China （Grant Nos 50573024, 50433030 and 20505020）, the Key Project of Chinese Ministry of Education （Grant No 104208）.
文摘In this paper full polymer thin-film transistors （PTFTs） based on Poly （acrylonitrile） （PAN） as the gate dielectric and poly （2-methoxy-5-（2＇-ethyl-hexyloxy）-1,4-phenylene-vinylene） （MEH-PPV） as the semiconductor layer were investigated by using different channel width/length ratios. Relatively high dielectric constant of the polymer dielectric layer （6.27） can remarkably reduce the threshold voltage of the transistors to below -3V. Hole field-effect mobility of MEH-PPV of the PTFTs was about 4.8×10^-4cm^2/Vs, and on/off current ratio was larger than 10^2, which was comparable with that of transistors with widely used Poly （4-vinyl phenol） （PVP） or SiO2 as gate dielectrics.
基金Project supported by the National Natural Science Foundation of China (Grant No. U1174001)the Ministry of Education Scientific Research Foundation for Returned Scholars,China (Grant No. 20091001)+1 种基金the Scientific and Technological Plan of Guangzhou City,China (Grant No. 2010U1-D00131)the Natural Science Foundation of Guangdong Province,China (Grant No. S2011010003400)
文摘A strain-compensated InGaN quantum well（QW） active region employing a tensile AlGaN barrier is analyzed.Its spectral stability and efficiency droop for a dual-blue light-emitting diode（LED） are improved compared with those of the conventional InGaN/GaN QW dual-blue LEDs based on a stacking structure of two In0.18Ga0.82N/GaN QWs and two In0.12Ga0.88N/GaN QWs on the same sapphire substrate.It is found that the optimal performance is achieved when the Al composition of the strain-compensated AlGaN layer is 0.12 in blue QW and 0.21 in blue-violet QW.The improvement performance can be attributed to the strain-compensated InGaN-AlGaN/GaN QW,which can provide a better carrier confinement and effectively reduce leakage current.
基金supported by the National Natural Science Foundation of China (Grant No. 60676033)
文摘This paper reports that the n-type organic thin-fihn transistors have been fabricated by using C60 as the active layer and polystyrene as the dielectric. The properties of insulator and the growth characteristic of C60 film were carefully investigated. By choosing different source/drain electrodes, a device with good performance can be obtained. The highest electron field effect mobility about 1.15 cm2/（V. s） could reach when Barium was introduced as electrodes. Moreover, the C60 transistor shows a negligible ＇hysteresis effect＇ contributed to the hydroxyl-free of insulator. The result suggests that polymer dielectrics are promising in applications among n-type organic transistors.
基金Project supported by Science and Technology Planning Project of Guangdong Province (Grant No. 2007A010501008)the Production and Research Project of Guangdong Province and the Ministry of Education (Grant No. 2009B090300338)
文摘This paper reports that highly transparent and low resistance tantalum-doped indium tin oxide （Ta-doped ITO） films contacted to p-type GaN have been prepared by the electron-beam evaporation technique. The Ta-doped ITO contacts become Ohmic with a specific contact resistance of $／sim 5.65／times 10^{ - 5}$$／Omega ／cdot$cm$^{2}$ and show the transmittance of $／sim $98% at a wavelength of 440nm when annealed at 500／du. Blue light emitting diodes （LEDs） fabricated with Ta-doped ITO p-type Ohmic contact layers give a forward-bias voltage of 3.21V at an injection current of 20mA. It further shows that the output power of LEDs with Ta-doped ITO contacts is enhanced 62% at 20mA in comparison with that of LEDs with conventional Ni/Au contacts
