三维软件建模凭借它真实的场景展现和其直观的视觉感受,成了三维地理信息系统(geographic information system,GIS)领域的主要研究方向。三维软件建模法构建的模型真实、美观,能非常精细地表现地物的特征和细节。通过对3Ds Max和Sketch...三维软件建模凭借它真实的场景展现和其直观的视觉感受,成了三维地理信息系统(geographic information system,GIS)领域的主要研究方向。三维软件建模法构建的模型真实、美观,能非常精细地表现地物的特征和细节。通过对3Ds Max和Sketch Up两种不同三维软件建模方法的比较分析,总结出两种软件各自的优势,然后将两者的优点相结合,能更加快速完整地进行三维模型构建。通过对联合建模方法的研究,能够为三维软件建模提供一种更为简洁的方法,从而缩短建模的时间,减少人力消耗。展开更多
We successfully fabricate a high performanceβ-phase(In_(0.09)Ga_(0.91))_(2)O_(3)single-crystalline film deep ultraviolet(DUV)solar-blind photodetector.The 2-inches high crystalline quality film is hetero-grown on the...We successfully fabricate a high performanceβ-phase(In_(0.09)Ga_(0.91))_(2)O_(3)single-crystalline film deep ultraviolet(DUV)solar-blind photodetector.The 2-inches high crystalline quality film is hetero-grown on the sapphire substrates using the plasma-assisted molecular beam epitaxy(PA-MBE).The smooth InGaO single crystalline film is used to construct the solar-blind DUV detector,which utilized an interdigitated Ti/Au electrode with a metal-semiconductor-metal structure.The device exhibits a low dark current of 40 pA(0 V),while its UV photon responsivity exceeds 450 A/W(50 V)at the peak wavelength of 232 nm with illumination intensity of 0.21 m W/cm^(2)and the UV/VIS rejection ratio(R232 nm/R380 nm)exceeds 4×10^(4).Furthermore,the devices demonstrate ultrafast transient characteristics for DUV signals,with fast-rising and fast-falling times of 80 ns and 420 ns,respectively.This excellent temporal dynamic behavior can be attributed to indium doping can adjust the electronic structure of Ga_(2)O_(3)alloys to enhance the performance of InGaO solar-blind detectors.Additionally,a two-dimensional DUV scanning image is captured using the InGaO photodetector as a sensor in an imaging system.Our results pave the way for future applications of two-dimensional array DUV photodetectors based on the large-scale InGaO heteroepitaxially grown alloy wide bandgap semiconductor films.展开更多
文摘三维软件建模凭借它真实的场景展现和其直观的视觉感受,成了三维地理信息系统(geographic information system,GIS)领域的主要研究方向。三维软件建模法构建的模型真实、美观,能非常精细地表现地物的特征和细节。通过对3Ds Max和Sketch Up两种不同三维软件建模方法的比较分析,总结出两种软件各自的优势,然后将两者的优点相结合,能更加快速完整地进行三维模型构建。通过对联合建模方法的研究,能够为三维软件建模提供一种更为简洁的方法,从而缩短建模的时间,减少人力消耗。
基金the National Natural Science Foundation of China(Grant Nos.U22A2073,11974433,91833301,and 11974122)。
文摘We successfully fabricate a high performanceβ-phase(In_(0.09)Ga_(0.91))_(2)O_(3)single-crystalline film deep ultraviolet(DUV)solar-blind photodetector.The 2-inches high crystalline quality film is hetero-grown on the sapphire substrates using the plasma-assisted molecular beam epitaxy(PA-MBE).The smooth InGaO single crystalline film is used to construct the solar-blind DUV detector,which utilized an interdigitated Ti/Au electrode with a metal-semiconductor-metal structure.The device exhibits a low dark current of 40 pA(0 V),while its UV photon responsivity exceeds 450 A/W(50 V)at the peak wavelength of 232 nm with illumination intensity of 0.21 m W/cm^(2)and the UV/VIS rejection ratio(R232 nm/R380 nm)exceeds 4×10^(4).Furthermore,the devices demonstrate ultrafast transient characteristics for DUV signals,with fast-rising and fast-falling times of 80 ns and 420 ns,respectively.This excellent temporal dynamic behavior can be attributed to indium doping can adjust the electronic structure of Ga_(2)O_(3)alloys to enhance the performance of InGaO solar-blind detectors.Additionally,a two-dimensional DUV scanning image is captured using the InGaO photodetector as a sensor in an imaging system.Our results pave the way for future applications of two-dimensional array DUV photodetectors based on the large-scale InGaO heteroepitaxially grown alloy wide bandgap semiconductor films.
