Recently,significant experimental advancements in achieving topological phases have been reported in van der Waals(vdW)heterostructures involving graphene.Here,using first-principles calculations,we investigate graphe...Recently,significant experimental advancements in achieving topological phases have been reported in van der Waals(vdW)heterostructures involving graphene.Here,using first-principles calculations,we investigate graphene/CoBr_(2)(Gr/CoBr_(2))heterostructures and find that an enhancement of in-plane magnetic anisotropy(IMA)energy in monolayer CoBr_(2) can be accomplished by reducing the interlayer distance of the vdW heterostructures.In addition,we clarify that the enhancement of IMA energy primarily results from two factors:one is the weakness of the Co-d_(xy) and Co-d_(x^(2)-y^(2)) orbital hybridization and the other is the augmentation of the Co-d_(yz) and Co-d_(z)2 orbital hybridization.Meanwhile,calculation results suggest that the Kosterlitz–Thouless phase transition temperature(TKT)of a 2D XY magnet Gr/CoBr_(2)(23.8 K)is higher than that of a 2D XY monolayer CoBr_(2)(1.35 K).By decreasing the interlayer distances,the proximity effect is more pronounced and band splitting appears.Moreover,by taking into account spin–orbit coupling,a band gap of approximately 14.3 meV and the quantum anomalous Hall effect(QAHE)are attained by decreasing the interlayer distance by 1.0 A.Inspired by the above conclusions,we design a topological field transistor device model.Our results support that the vdW interlayer distance can be used to modulate the IMA energy and QAHE of materials,providing a pathway for the development of new low-power spintronic devices.展开更多
Two-dimensional(2D)nanomaterials with bipolar magnetism show great promise in spintronic applications.Manipulating carriers'spin-polarized orientation in bipolar magnetic semiconductor(BMS)requires a gate voltage,...Two-dimensional(2D)nanomaterials with bipolar magnetism show great promise in spintronic applications.Manipulating carriers'spin-polarized orientation in bipolar magnetic semiconductor(BMS)requires a gate voltage,but that is volatile.Recently,a new method has been proposed to solve the problem of volatility by introducing a ferroelectric gate with proper band alignment.In this paper,we predict that the PdX_(2)(X=F,Cl,Br,I)monolayers are 2D ferromagnetic BMS with dynamic stability,thermal stability,and mechanical stability by first-principles calculations.The critical temperatures are higher than the boiling point of liquid nitrogen and the BMS characteristics are robust against external strains and electric fields for PdCl_(2) and PdBr_(2).Then,we manipulate the spin-polarization of PdCl_(2) and PdBr_(2) by introducing a ferroelectric gate to enable magnetic half-metal/semiconductor switching and spin-up/down polarization switching control.Two kinds of spin devices(multiferroic memory and spin filter)have been proposed to realize the spin-polarized directions of electrons.These results demonstrate that PdCl_(2) and PdBr_(2) with BMS characters can be widely used as a general material structure for spintronic devices.展开更多
Searching for one-dimensional(1D)nanostructure with ferromagnetic(FM)half-metallicity is of significance for the development of miniature spintronic devices.Here,based on the first-principles calculations,we propose t...Searching for one-dimensional(1D)nanostructure with ferromagnetic(FM)half-metallicity is of significance for the development of miniature spintronic devices.Here,based on the first-principles calculations,we propose that the 1D CrN nanostructure is a FM half-metal,which can generate the fully spin-polarized current.The ab initio molecular dynamic simulation and the phonon spectrum calculation demonstrate that the 1D CrN nanostructure is thermodynamically stable.The partially occupied Cr-d orbitals endow the nanostructure with FM half-metallicity,in which the half-metallic gap(?s)reaches up to 1.58 eV.The ferromagnetism in the nanostructure is attributed to the superexchange interaction between the magnetic Cr atoms,and a sizable magnetocrystalline anisotropy energy(MAE)is obtained.Moreover,the transverse stretching of nanostructure can effectively modulate?s and MAE,accompanied by the preservation of half-metallicity.A nanocable is designed by encapsulating the CrN nanostructure with a BN nanotube,and the intriguing magnetic and electronic properties of the nanostructure are retained.These novel characteristics render the 1D CrN nanostructure as a compelling candidate for exploiting high-performance spintronic devices.展开更多
The two-dimensional(2D) materials with nodal line band crossing have been attracting great research interest. However, it remains a challenge to find high-stable nodal line structure in 2D systems. Herein, based on th...The two-dimensional(2D) materials with nodal line band crossing have been attracting great research interest. However, it remains a challenge to find high-stable nodal line structure in 2D systems. Herein, based on the first-principles calculations and theoretical analysis, we propose that monolayer B_(6)O possesses symmetry protected Dirac nodal line(DNL)state, with its Fermi velocity of 10^(6)m/s in the same order of magnitude as that of graphene. The origin of DNL fermions is induced by coexistence of time-reversal symmetry and inversion symmetry. A two-band tight-binding model is further given to understand the mechanism of DNL. Considering its robustness against spin–orbit coupling(SOC) and high structural stability, these results suggest monolayer B_(6)O as a new platform for realizing future high-speed low-dissipation devices.展开更多
Though the quantum spin Hall effect(QSHE) in two-dimensional(2 D) crystals has been widely explored, the experimental realization of quantum transport properties is only limited to HgTe/CdTe or InAs/GaSb quantum w...Though the quantum spin Hall effect(QSHE) in two-dimensional(2 D) crystals has been widely explored, the experimental realization of quantum transport properties is only limited to HgTe/CdTe or InAs/GaSb quantum wells. Here we employ a tight-binding model on the basis of d(z^2), d(xy), and d(x^2-y^2) orbitals to propose QSHE in the triangular lattice, which are driven by a crossing of electronic bands at the Γ point. Remarkably, 2 D oxidized Mxenes W2 M2 C3 are ideal materials with nontrivial gap of 0.12 eV, facilitating room-temperature observations in experiments. We also find that the nontrivially topological properties of these materials are sensitive to the cooperative effect of the electron correlation and spin-orbit coupling. Due to the feasible exfoliation from its 3 D MAX phase, our work paves a new direction towards realizing QSHE with low dissipation.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.52173283)Taishan Scholar Program of Shandong Province(Grant No.ts20190939)Independent Cultivation Program of Innovation Team of Jinan City(Grant No.2021GXRC043).
文摘Recently,significant experimental advancements in achieving topological phases have been reported in van der Waals(vdW)heterostructures involving graphene.Here,using first-principles calculations,we investigate graphene/CoBr_(2)(Gr/CoBr_(2))heterostructures and find that an enhancement of in-plane magnetic anisotropy(IMA)energy in monolayer CoBr_(2) can be accomplished by reducing the interlayer distance of the vdW heterostructures.In addition,we clarify that the enhancement of IMA energy primarily results from two factors:one is the weakness of the Co-d_(xy) and Co-d_(x^(2)-y^(2)) orbital hybridization and the other is the augmentation of the Co-d_(yz) and Co-d_(z)2 orbital hybridization.Meanwhile,calculation results suggest that the Kosterlitz–Thouless phase transition temperature(TKT)of a 2D XY magnet Gr/CoBr_(2)(23.8 K)is higher than that of a 2D XY monolayer CoBr_(2)(1.35 K).By decreasing the interlayer distances,the proximity effect is more pronounced and band splitting appears.Moreover,by taking into account spin–orbit coupling,a band gap of approximately 14.3 meV and the quantum anomalous Hall effect(QAHE)are attained by decreasing the interlayer distance by 1.0 A.Inspired by the above conclusions,we design a topological field transistor device model.Our results support that the vdW interlayer distance can be used to modulate the IMA energy and QAHE of materials,providing a pathway for the development of new low-power spintronic devices.
基金Project supported by the Taishan Scholar Program of Shandong Province,China (Grant No.ts20190939)the Independent Cultivation Program of Innovation Team of Jinan City (Grant No.2021GXRC043)+1 种基金the National Natural Science Foundation of China (Grant No.52173283)the Natural Science Foundation of Shandong Province (Grant No.ZR2020QA052)。
文摘Two-dimensional(2D)nanomaterials with bipolar magnetism show great promise in spintronic applications.Manipulating carriers'spin-polarized orientation in bipolar magnetic semiconductor(BMS)requires a gate voltage,but that is volatile.Recently,a new method has been proposed to solve the problem of volatility by introducing a ferroelectric gate with proper band alignment.In this paper,we predict that the PdX_(2)(X=F,Cl,Br,I)monolayers are 2D ferromagnetic BMS with dynamic stability,thermal stability,and mechanical stability by first-principles calculations.The critical temperatures are higher than the boiling point of liquid nitrogen and the BMS characteristics are robust against external strains and electric fields for PdCl_(2) and PdBr_(2).Then,we manipulate the spin-polarization of PdCl_(2) and PdBr_(2) by introducing a ferroelectric gate to enable magnetic half-metal/semiconductor switching and spin-up/down polarization switching control.Two kinds of spin devices(multiferroic memory and spin filter)have been proposed to realize the spin-polarized directions of electrons.These results demonstrate that PdCl_(2) and PdBr_(2) with BMS characters can be widely used as a general material structure for spintronic devices.
基金the National Natural Science Foundation of China(Grant Nos.12004137,62071200,and 12104236)Shandong Provincial Natural Science Foundation of China(Grant Nos.ZR2020QA052,ZR2020ZD28,ZR2021MA040,and ZR2021MA060).
文摘Searching for one-dimensional(1D)nanostructure with ferromagnetic(FM)half-metallicity is of significance for the development of miniature spintronic devices.Here,based on the first-principles calculations,we propose that the 1D CrN nanostructure is a FM half-metal,which can generate the fully spin-polarized current.The ab initio molecular dynamic simulation and the phonon spectrum calculation demonstrate that the 1D CrN nanostructure is thermodynamically stable.The partially occupied Cr-d orbitals endow the nanostructure with FM half-metallicity,in which the half-metallic gap(?s)reaches up to 1.58 eV.The ferromagnetism in the nanostructure is attributed to the superexchange interaction between the magnetic Cr atoms,and a sizable magnetocrystalline anisotropy energy(MAE)is obtained.Moreover,the transverse stretching of nanostructure can effectively modulate?s and MAE,accompanied by the preservation of half-metallicity.A nanocable is designed by encapsulating the CrN nanostructure with a BN nanotube,and the intriguing magnetic and electronic properties of the nanostructure are retained.These novel characteristics render the 1D CrN nanostructure as a compelling candidate for exploiting high-performance spintronic devices.
基金Project supported by Taishan Scholar Program of Shandong Province, China (Grant No. ts20190939)Independent Cultivation Program of Innovation Team of Jinan City (Grant No. 2021GXRC043)the National Natural Science Foundation of China (Grant Nos. 52173283 and 62071200)。
文摘The two-dimensional(2D) materials with nodal line band crossing have been attracting great research interest. However, it remains a challenge to find high-stable nodal line structure in 2D systems. Herein, based on the first-principles calculations and theoretical analysis, we propose that monolayer B_(6)O possesses symmetry protected Dirac nodal line(DNL)state, with its Fermi velocity of 10^(6)m/s in the same order of magnitude as that of graphene. The origin of DNL fermions is induced by coexistence of time-reversal symmetry and inversion symmetry. A two-band tight-binding model is further given to understand the mechanism of DNL. Considering its robustness against spin–orbit coupling(SOC) and high structural stability, these results suggest monolayer B_(6)O as a new platform for realizing future high-speed low-dissipation devices.
基金Supported by the Natural Science Foundation of Shandong Province under Grant No ZR2018MA033the National Natural Science Foundation of China under Grant No 11274143
文摘Though the quantum spin Hall effect(QSHE) in two-dimensional(2 D) crystals has been widely explored, the experimental realization of quantum transport properties is only limited to HgTe/CdTe or InAs/GaSb quantum wells. Here we employ a tight-binding model on the basis of d(z^2), d(xy), and d(x^2-y^2) orbitals to propose QSHE in the triangular lattice, which are driven by a crossing of electronic bands at the Γ point. Remarkably, 2 D oxidized Mxenes W2 M2 C3 are ideal materials with nontrivial gap of 0.12 eV, facilitating room-temperature observations in experiments. We also find that the nontrivially topological properties of these materials are sensitive to the cooperative effect of the electron correlation and spin-orbit coupling. Due to the feasible exfoliation from its 3 D MAX phase, our work paves a new direction towards realizing QSHE with low dissipation.