The structural and optical properties of InGaN/GaN multiple quantum wells （MQWs） with different barrier thick-nesses are studied by means of high resolution X-ray diffraction （HRXRD）, a cross-sectional transmissio...The structural and optical properties of InGaN/GaN multiple quantum wells （MQWs） with different barrier thick-nesses are studied by means of high resolution X-ray diffraction （HRXRD）, a cross-sectional transmission electron mi-croscope （TEM）, and temperature-dependent photoluminescence （PL） measurements. HRXRD and cross-sectional TEM measurements show that the interfaces between wells and barriers are abrupt and the entire MQW region has good periodic- ity for all three samples. As the barrier thickness is increased, the temperature of the turning point from blueshift to redshift of the S-shaped temperature-dependent PL peak energy increases monotonously, which indicates that the localization po- tentials due to In-rich clusters is deeper. From the Arrhenius plot of the normalized integrated PL intensity, it is found that there are two kinds of nonradiative recombination processes accounting for the thermal quenching of photoluminescence, and the corresponding activation energy （or the localization potential） increases with the increase of the barrier thickness. The dependence on barrier thickness is attributed to the redistribution of In-rich clusters during the growth of barrier layers, i.e., clusters with lower In contents aggregate into clusters with higher In contents.展开更多
Emission properties of self-assembled green-emitting InGaN quantum dots （QDs） grown on sapphire substrates by using metal organic chemical vapor deposition are studied by temperature-dependent photoluminescence （PL...Emission properties of self-assembled green-emitting InGaN quantum dots （QDs） grown on sapphire substrates by using metal organic chemical vapor deposition are studied by temperature-dependent photoluminescence （PL） measurements. As temperature increases （15-300K）, the PL peak energy shows an anomalous V-shaped （redshift blueshift） variation instead of an S-shaped （redshift-blueshift-redshift） variation, as observed typically in green-emitting InGaN/GaN multi-quantum wells （MOWs）. The PL full width at half maximum （FWHM） also shows a V-shaped （decrease-increase） variation. The temperature dependence of the PL peak energy and FWHM of QDs are well explained by a model similar to MOWs, in which carriers transferring in localized states play an important role, while the confinement energy of localized states in the QDs is significantly larger than that in MOWs. By analyzing the integrated PL intensity, the larger confinement energy of localized states in the QDs is estimated to be 105.9meV, which is well explained by taking into account the band-gap shrinkage and carrier thermalization with temperature. It is also found that the nonradiative combination centers in QD samples are much less than those in QW samples with the same In content.展开更多
In diffusion to blue light-emitting diode （LED） wafers is performed by the inductive coupled plasma （ICP） treatment of a covering layer of indium tin oxide （ITO） on the wafer surface. The electrical property of ...In diffusion to blue light-emitting diode （LED） wafers is performed by the inductive coupled plasma （ICP） treatment of a covering layer of indium tin oxide （ITO） on the wafer surface. The electrical property of the p- type contact is improved and the redshift of photoluminescence （PL） from the InGaN quantum well of the wafer is found. Measurements by x-ray photoelectron spectroscopy （XPS） demonstrate that In atoms have diffused into p-GaN. Reflectance spectra of the sample surface reveal the variation caused by the ICP treatment. A model of compensation of the in-plane strain of the InGaN layer is used to explain the redshift of the PL data. Finally, LEDs are fabricated by using as-grown and ICP-treated wafers and their properties are compared. Under an injection current of 20mA, LEDs with ICP-induced In doping show a decrease of 0.3 V in the forward voltage and an increase of 23% in the light output, respectively.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61106044 and 61274052)the Specialized Research Fund for the Doctoral Program of Higher Education of China(Grant No.20110121110029)+1 种基金the Fundamental Research Funds for the Central Universities of Ministry of Education of China(Grant No.2013121024)the Natural Science Foundation of Fujian Province of China(Grant No.2013J05096)
文摘The structural and optical properties of InGaN/GaN multiple quantum wells （MQWs） with different barrier thick-nesses are studied by means of high resolution X-ray diffraction （HRXRD）, a cross-sectional transmission electron mi-croscope （TEM）, and temperature-dependent photoluminescence （PL） measurements. HRXRD and cross-sectional TEM measurements show that the interfaces between wells and barriers are abrupt and the entire MQW region has good periodic- ity for all three samples. As the barrier thickness is increased, the temperature of the turning point from blueshift to redshift of the S-shaped temperature-dependent PL peak energy increases monotonously, which indicates that the localization po- tentials due to In-rich clusters is deeper. From the Arrhenius plot of the normalized integrated PL intensity, it is found that there are two kinds of nonradiative recombination processes accounting for the thermal quenching of photoluminescence, and the corresponding activation energy （or the localization potential） increases with the increase of the barrier thickness. The dependence on barrier thickness is attributed to the redistribution of In-rich clusters during the growth of barrier layers, i.e., clusters with lower In contents aggregate into clusters with higher In contents.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61274052 and 61106044, the Doctoral Program Foundation of Institutions of Higher Education of China under Grant No 20110121110029, the Fundamental Research Funds for the Central Universities under Grant No 2013121024, and the Key Lab of Nanodevices and Nanoapplications, Suzhou Institute of Nano-Tech and Nano-Bionics of Chinese Academy of Sciences under Grant No 14ZS02.
文摘Emission properties of self-assembled green-emitting InGaN quantum dots （QDs） grown on sapphire substrates by using metal organic chemical vapor deposition are studied by temperature-dependent photoluminescence （PL） measurements. As temperature increases （15-300K）, the PL peak energy shows an anomalous V-shaped （redshift blueshift） variation instead of an S-shaped （redshift-blueshift-redshift） variation, as observed typically in green-emitting InGaN/GaN multi-quantum wells （MOWs）. The PL full width at half maximum （FWHM） also shows a V-shaped （decrease-increase） variation. The temperature dependence of the PL peak energy and FWHM of QDs are well explained by a model similar to MOWs, in which carriers transferring in localized states play an important role, while the confinement energy of localized states in the QDs is significantly larger than that in MOWs. By analyzing the integrated PL intensity, the larger confinement energy of localized states in the QDs is estimated to be 105.9meV, which is well explained by taking into account the band-gap shrinkage and carrier thermalization with temperature. It is also found that the nonradiative combination centers in QD samples are much less than those in QW samples with the same In content.
基金Supported by the National Natural Science Foundation of China under Grant Nos 11474235 and 61274052the Fundamental Research Funds for the Central Universities under Grant No 2013121024the Key Lab of Nanodevices and Nanoapplications,Suzhou Institute of Nano-Tech and Nano-Bionics of Chinese Academy of Sciences under Grant No 14ZS02
文摘In diffusion to blue light-emitting diode （LED） wafers is performed by the inductive coupled plasma （ICP） treatment of a covering layer of indium tin oxide （ITO） on the wafer surface. The electrical property of the p- type contact is improved and the redshift of photoluminescence （PL） from the InGaN quantum well of the wafer is found. Measurements by x-ray photoelectron spectroscopy （XPS） demonstrate that In atoms have diffused into p-GaN. Reflectance spectra of the sample surface reveal the variation caused by the ICP treatment. A model of compensation of the in-plane strain of the InGaN layer is used to explain the redshift of the PL data. Finally, LEDs are fabricated by using as-grown and ICP-treated wafers and their properties are compared. Under an injection current of 20mA, LEDs with ICP-induced In doping show a decrease of 0.3 V in the forward voltage and an increase of 23% in the light output, respectively.
