A heavy-ion irradiation experiment is studied in digital storage cells with different design approaches in 130？nm CMOS bulk Si and silicon-on-insulator （SOI） technologies. The effectiveness of linear energy transf...A heavy-ion irradiation experiment is studied in digital storage cells with different design approaches in 130？nm CMOS bulk Si and silicon-on-insulator （SOI） technologies. The effectiveness of linear energy transfer （LET） with a tilted ion beam at the 130？nm technology node is obtained. Tests of tilted angles θ=0 ° , 30 ° and 60 ° with respect to the normal direction are performed under heavy-ion Kr with certain power whose LET is about 40？MeVcm 2 /mg at normal incidence. Error numbers in D flip-flop chains are used to determine their upset sensitivity at different incidence angles. It is indicated that the effective LETs for SOI and bulk Si are not exactly in inverse proportion to cosθ , furthermore the effective LET for SOI is more closely in inverse proportion to cosθ compared to bulk Si, which are also the well known behavior. It is interesting that, if we design the sample in the dual interlocked storage cell approach, the effective LET in bulk Si will look like inversely proportional to cosθ very well, which is also specifically explained.展开更多
The total dose effect of an AD678 with a BiMOS process is studied.We investigate the performance degradation of the device in different bias states and at several dose rates.The results show that an AD678 can endure 3...The total dose effect of an AD678 with a BiMOS process is studied.We investigate the performance degradation of the device in different bias states and at several dose rates.The results show that an AD678 can endure 3 krad（Si） at low dose rate and 5 krad（Si） at a high dose rate for static bias.The sensitive parameters to the bias states also differ distinctly.We find that the degradation is more serious on static bias.The underlying mechanisms are discussed in detail.展开更多
基金Supported by the Key Laboratory of Microsatellites,Chinese Academy of Sciences
文摘A heavy-ion irradiation experiment is studied in digital storage cells with different design approaches in 130？nm CMOS bulk Si and silicon-on-insulator （SOI） technologies. The effectiveness of linear energy transfer （LET） with a tilted ion beam at the 130？nm technology node is obtained. Tests of tilted angles θ=0 ° , 30 ° and 60 ° with respect to the normal direction are performed under heavy-ion Kr with certain power whose LET is about 40？MeVcm 2 /mg at normal incidence. Error numbers in D flip-flop chains are used to determine their upset sensitivity at different incidence angles. It is indicated that the effective LETs for SOI and bulk Si are not exactly in inverse proportion to cosθ , furthermore the effective LET for SOI is more closely in inverse proportion to cosθ compared to bulk Si, which are also the well known behavior. It is interesting that, if we design the sample in the dual interlocked storage cell approach, the effective LET in bulk Si will look like inversely proportional to cosθ very well, which is also specifically explained.
文摘The total dose effect of an AD678 with a BiMOS process is studied.We investigate the performance degradation of the device in different bias states and at several dose rates.The results show that an AD678 can endure 3 krad（Si） at low dose rate and 5 krad（Si） at a high dose rate for static bias.The sensitive parameters to the bias states also differ distinctly.We find that the degradation is more serious on static bias.The underlying mechanisms are discussed in detail.
