High-strain InGaAs/GaAs quantum wells （QWs） are grown by low-pressure metal-organic chemical vapor deposition （LP-MOCVD）. Photoluminescence （PL） at room temperature is applied for evaluation of the optical prope...High-strain InGaAs/GaAs quantum wells （QWs） are grown by low-pressure metal-organic chemical vapor deposition （LP-MOCVD）. Photoluminescence （PL） at room temperature is applied for evaluation of the optical property. The influence of growth temperature, V/III ratio, and growth rate on PL characteristic are investigated. It is found that the growth temperature and V/III ratio have strong effects on the peak wavelength and PL intensity. The full-width at half-maximum （FWHM） of PL peak increases with higher growth rate of InGaAs layer. The FWHM of the PL peak located at 1039 nm is 20.1 meV, which grows at 600 ℃ with V/ III ratio of 42.7 and growth rate of 0.96 μm/h.展开更多
基金supported by the National Natural Science Foundation of China(Nos.60976038,61107054,61308051,and 61370043)the NSAF of China(No.U1330136)+1 种基金the Scientific and Technological Development Project in Jilin Province(No.20100419)the National Key Lab of High Power Semiconductor Lasers Foundation
文摘High-strain InGaAs/GaAs quantum wells （QWs） are grown by low-pressure metal-organic chemical vapor deposition （LP-MOCVD）. Photoluminescence （PL） at room temperature is applied for evaluation of the optical property. The influence of growth temperature, V/III ratio, and growth rate on PL characteristic are investigated. It is found that the growth temperature and V/III ratio have strong effects on the peak wavelength and PL intensity. The full-width at half-maximum （FWHM） of PL peak increases with higher growth rate of InGaAs layer. The FWHM of the PL peak located at 1039 nm is 20.1 meV, which grows at 600 ℃ with V/ III ratio of 42.7 and growth rate of 0.96 μm/h.
