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拓扑绝缘体(Bi_(1-x)Sb_(x))_(2)Te_(3)薄膜制备及其电输运性能研究
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作者 张哲瑞 仇怀利 +3 位作者 周同 黄文宇 葛威锋 杨远俊 《合肥工业大学学报(自然科学版)》 CAS 北大核心 2023年第11期1580-1584,共5页
文章利用分子束外延(molecular beam epitaxy, MBE)法,在超高真空的条件下,于蓝宝石衬底上制备超薄的高质量拓扑绝缘体(Bi_(1-x)Sb_(x))_(2)Te_(3)薄膜。利用反射高能电子衍射(reflection high-energy electron diffraction, RHEED)仪、... 文章利用分子束外延(molecular beam epitaxy, MBE)法,在超高真空的条件下,于蓝宝石衬底上制备超薄的高质量拓扑绝缘体(Bi_(1-x)Sb_(x))_(2)Te_(3)薄膜。利用反射高能电子衍射(reflection high-energy electron diffraction, RHEED)仪、X射线衍射(X-ray diffraction, XRD)仪、显微共焦激光拉曼光谱仪(micro confocal laser Raman spectrometer)和X射线光电子能谱(X-ray photoelectron spectroscopy, XPS)仪对不同Sb掺杂量的样品进行表征,并获得最佳的制备参数。研究结果表明:衬底温度为460℃时Bi和Te的流量比为1∶16左右;在Sb温度为350、360、370、380℃时,可以制得高质量的(Bi_(1-x)Sb_(x))_(2)Te_(3)薄膜。利用霍尔效应测量系统测量样品的电阻率、霍尔系数、迁移率和载流子浓度;测量结果表明,(Bi_(1-x)Sb_(x))_(2)Te_(3)薄膜的载流子浓度和主要载流子类型随x的变化而发生相应的变化,并伴随着费米能级位置的调谐,随着x的增加,在x=0.53到x=0.68的掺杂过程中,费米能级从导带下移到带隙,最终进入价带,多数载流子类型也从自由电子转变成空穴,(Bi_(1-x)Sb_(x))_(2)Te_(3)实现了从n型到p型的转化。 展开更多
关键词 分子束外延(MBE) 拓扑绝缘体 (Bi_(1-x)Sb_(x))_(2)Te_(3)薄膜 霍尔系数 载流子迁移率
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A Simple,Compact and Rigid Scanning Tunneling Microscope 被引量:1
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作者 Wei-feng Ge Ji-hao Wang +1 位作者 Yu-bin Hou Qing-you Lu 《Chinese Journal of Chemical Physics》 SCIE CAS CSCD 2018年第5期731-734,736,共5页
We present a homebuilt scanning tunneling microscope(STM)which employs an inner-wall polished sapphire guiding tube as a rail for the scanner to form a short tip-sample mechanical loop.The scanner is mounted on a squa... We present a homebuilt scanning tunneling microscope(STM)which employs an inner-wall polished sapphire guiding tube as a rail for the scanner to form a short tip-sample mechanical loop.The scanner is mounted on a square rod which is housed in the guiding tube and held by a spring strip.The stiff sapphire guiding tube allows the STM body to be made in a simple,compact and rigid form.Also the material of sapphire improves the thermal stability of the STM for its good thermal conductivity.To demonstrate the performance of the STM,high quality atomic-resolution STM images of high oriented pyrolytic graphite were given. 展开更多
关键词 Scanning tunneling microscope Sapphire guiding tube Finite element analyses Atomic-resolution image
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Strain-mediated magnetoelectric control of tunneling magnetoresistance in magnetic tunneling junction/ferroelectric hybrid structures
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作者 Wenyu Huang Cangmin Wang +7 位作者 Yichao Liu Shaoting Wang Weifeng Ge Huaili Qiu Yuanjun Yang Ting Zhang Hui Zhang Chen Gao 《Chinese Physics B》 SCIE EI CAS CSCD 2022年第9期532-539,共8页
Because of the wide selectivity of ferromagnetic and ferroelectric(FE)components,electric-field(E-field)control of magnetism via strain mediation can be easily realized through composite multiferroic heterostructures.... Because of the wide selectivity of ferromagnetic and ferroelectric(FE)components,electric-field(E-field)control of magnetism via strain mediation can be easily realized through composite multiferroic heterostructures.Here,an MgO-based magnetic tunnel junction(MTJ)is chosen rationally as the ferromagnetic constitution and a high-activity(001)-Pb(Mg_(1/3)Nb_(2/3))_(0.7)Ti_(0.3)O_(3)(PMN-0.3PT)single crystal is selected as the FE component to create a multiferroic MTJ/FE hybrid structure.The shape of tunneling magnetoresistance(TMR)versus in situ E-fields imprints the butterfly loop of the piezo-strain of the FE without magnetic-field bias.The E-field-controlled change in the TMR ratio is up to-0.27%without magnetic-field bias.Moreover,when a typical magnetic field(~±10 Oe)is applied along the minor axis of the MTJ,the butterfly loop is changed significantly by the E-fields relative to that without magnetic-field bias.This suggests that the E-field-controlled junction resistance is spin-dependent and correlated with magnetization switching in the free layer of the MTJ.In addition,based on such a multiferroic heterostructure,a strain-gauge factor up to approximately 40 is achieved,which decreases further with a sign change from positive to negative with increasing magnetic fields.This multiferroic hybrid structure is a promising avenue to control TMR through E-fields in low-power-consumption spintronic and straintronic devices at room temperature. 展开更多
关键词 tunneling magnetoresistance magneti tunnel junction(MTJ) multiferroic heterostructure magnetoelectric coupling
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Direct Observation of Transition Metal Dichalcogenides in Liquid with Scanning Tunneling Microscopy
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作者 Ze Wang Ji-hao Wang +5 位作者 Wei-feng Ge Wen-jie Meng Jing Zhang Qi-yuan Feng Yu-bin Hou Qing-you Lu 《Chinese Journal of Chemical Physics》 SCIE CAS CSCD 2018年第6期767-771,733,共6页
We present atomic-resolution images of TiSe2,MoTe2 and TaS2 single crystals in liquid condition using our home-built scanning tunneling microscopy(STM).By facilely cleaving of single crystals in liquid,we were able to... We present atomic-resolution images of TiSe2,MoTe2 and TaS2 single crystals in liquid condition using our home-built scanning tunneling microscopy(STM).By facilely cleaving of single crystals in liquid,we were able to keep the fresh surface not oxidized within a few hours.Using the high-stable home-built STM,we have obtained atomic resolution images of TiSe2 accompanied with the single atom defects as well as the triangle defects in solution for the first time.Besides,the superstructure of MoTe2 and hexagonal chargedensity wave domain structure in nearly commensurate phase of TaS2 were also obtained at room temperature(295 K).Our results provide a more efficient method in investigating the lively surface of transition metal dichalcogenides.Besides,the high stable liquid-phase STM will support the further investigations in liquid-phase catalysis or electrochemistry. 展开更多
关键词 Scanning tunneling microscopy LIQUID DEFECT Charge-density wave
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