The left-handed nonlinear transmission line （LH-NLTL） based on monolithic microwave integrated circuit （MMIC） technology possesses significant advantages such as wide frequency band, high operating frequency, high...The left-handed nonlinear transmission line （LH-NLTL） based on monolithic microwave integrated circuit （MMIC） technology possesses significant advantages such as wide frequency band, high operating frequency, high conversion efficiency, and applications in millimeter and submillimeter wave frequency multiplier. The planar Schottky varactor diode （PSVD） is a major limitation to the performance of the LH-NLTL frequency multiplier as a nonlinear component. The design and the fabrication of the diode for such an application are presented. An accurate large-signal model of the diode is proposed. A 16 GHz-39,6 GHz LH NLTL frequency doubler using our large-signal model is reported for the first time. The measured maximum output powers of the 2nd harmonic are up to 8 dBm at 26.4 GHz, and above 0 dBm from 16 GHz to 39.6 GHz when the input power is 20 dBm. The application of the LH-NLTL frequency doubler furthermore validates the accuracy of the large-signal model of the PSVD.展开更多
A fabrication technology of GaAs planar Schottky varactor diode （PSVD） is successfully developed and used to design and manufacture CaAs-based monolithic frequency multiplication based on 23-section nonlinear transm...A fabrication technology of GaAs planar Schottky varactor diode （PSVD） is successfully developed and used to design and manufacture CaAs-based monolithic frequency multiplication based on 23-section nonlinear transmission lines （NLTLs） consisting of a coplanar waveguide transmission line and periodically distributed PSVDs. The throughout design and optimization procedure of 23-section monolithic NLTLs for frequency multiplication in the k-band range is based on a large signal equivalent model of PSVD extracted from small-signal S-parameter measurements. This paper reports that the distributed SPVD exhibits a capacitance ratio of 5.4, a normalized capacitance of 0.86 fF/μm2 and a breakdown voltage in excess of 22 V. The integrated 23-section NLTLs fed by 20-dBm input power demonstrates a 26-GHz peak second harmonic output power of 14-dBm with 25.3% conversion efficiency in the second harmonic output frequency range of 6 GHz-26 GHz.展开更多
The epitaxial material, device structure, and corresponding equivalent large signal circuit model of GaAs planar Schottky varactor diode are successfully developed to design and fabricate a monolithic phase shifter, w...The epitaxial material, device structure, and corresponding equivalent large signal circuit model of GaAs planar Schottky varactor diode are successfully developed to design and fabricate a monolithic phase shifter, which is based on right-handed nonlinear transmission lines and consists of a coplanar waveguide transmission line and periodically distributed GaAs planar Schottky varactor diode. The distributed-Schottky transmission-line-type phase shifter at a bias voltage greater than 1.5 V presents a continuous 0°–360° differential phase shift over a frequency range from 0 to 33 GHz. It is demonstrated that the minimum insertion loss is about 0.5 dB and that the return loss is less than-10 dB over the frequency band of 0–33 GHz at a reverse bias voltage less than 4.5 V. These excellent characteristics, such as broad differential phase shift, low insertion loss, and return loss, indicate that the proposed phase shifter can entirely be integrated into a phased array radar circuit.展开更多
GaAs-based planar Gunn diodes with A1GaAs hot electron injector have been successfully developed to be used as a local oscillator of 76 GHz in monolithic millimeter-wave integrated circuits. We designed two kinds of s...GaAs-based planar Gunn diodes with A1GaAs hot electron injector have been successfully developed to be used as a local oscillator of 76 GHz in monolithic millimeter-wave integrated circuits. We designed two kinds of structure diode, one has a fixed distance between the anode and cathode, but has variational cathode area, the other has a fixed cathode area, but has different distances between two electrodes. The fabrication of Gunn diode is performed in accordance with the order of operations： cathode defining, mesa etching, anode defining, isolation, passivation, via hole and electroplating. A peak current density of 29.5 kA/cm^2 is obtained. And the charavteristics of negative differential resistance and the asymmetry of the current-voltage curve due to the A1GaAs hot electron injector are discussed in detail. It is demonstrated that the smaller size of active area corresponds to the smaller current, and the shorter distance between anode and cathode also corresponds to the lower threshold voltage and higher peak current, and hot electron injector can effectively enhance the radio frequency conversion efficiency and output power.展开更多
A millimeter wave large-signal model of GaAs planar Schottky varactor diodes based on a physical analysis is presented.The model consists of nonlinear resistances and capacitances of the junction region and external p...A millimeter wave large-signal model of GaAs planar Schottky varactor diodes based on a physical analysis is presented.The model consists of nonlinear resistances and capacitances of the junction region and external parasitic parameters.By analyzing the characteristics of the diode under reverse and forward bias,an extraction procedure of all of the parameters is addressed.To validate the newly proposed model,the PSVDs were fabricated based on a planar process and were measured using an automatic network analyzer.Measurement shows that the model exactly represents the behavior of GaAs PSVDs under a wide bias condition from -10 to 0.6 V and for frequencies up to 40 GHz.展开更多
A broadband frequency doubler using left-handed nonlinear transmission lines（LH NLTLs） based on MMIC technology is reported for the first time.The second harmonic generation on LH NLTLs was analyzed theoretically. A...A broadband frequency doubler using left-handed nonlinear transmission lines（LH NLTLs） based on MMIC technology is reported for the first time.The second harmonic generation on LH NLTLs was analyzed theoretically. A four-section LH NLTL which has a layout of 5.4×0.8 mm^2 was fabricated on GaAs semi-insulating substrate. With 20-dBm input power,the doubler obtained 6.33 dBm peak output power at 26.8 GHz with 24-43 GHz—6 dBm bandwidth.The experimental results were quite consistent with the simulated results.The compactness and the broad band characteristics of the circuit make it well suit for GaAs RF/MMIC application.展开更多
A GaAs-based planar Schottky varactor diode （PSVD） is successfully developed to meet the demand of millimeter-wave harmonic generation. Based on the measured S-parameter, I-V and C-V characteristics, an accurate and...A GaAs-based planar Schottky varactor diode （PSVD） is successfully developed to meet the demand of millimeter-wave harmonic generation. Based on the measured S-parameter, I-V and C-V characteristics, an accurate and reliable extraction method of the millimeter-wave large signal equivalent circuit model of the PSVD is proposed and used to extract the model parameters of two PSVDs with Schottky contact areas of 160 μm2 and 49 μm2, respectively. The simulated S-parameter, I-V and C-V performances of the proposed physics-based model are in good agreement with the measured one over the frequency range from 0.1 to 40 GHz for wide operation bias range from -10 to 0.6 V for these two PSVDs. The proposed equivalent large signal circuit model of this PSVD has been proven to be reliable and can potentially be used to design microwave circuits.展开更多
基金Project supported by the National Scientific Major Projects of China (Grant No. 2011ZX03004-001-02)the National Natural Science Foundation of China (Grant No. 60806024)
文摘The left-handed nonlinear transmission line （LH-NLTL） based on monolithic microwave integrated circuit （MMIC） technology possesses significant advantages such as wide frequency band, high operating frequency, high conversion efficiency, and applications in millimeter and submillimeter wave frequency multiplier. The planar Schottky varactor diode （PSVD） is a major limitation to the performance of the LH-NLTL frequency multiplier as a nonlinear component. The design and the fabrication of the diode for such an application are presented. An accurate large-signal model of the diode is proposed. A 16 GHz-39,6 GHz LH NLTL frequency doubler using our large-signal model is reported for the first time. The measured maximum output powers of the 2nd harmonic are up to 8 dBm at 26.4 GHz, and above 0 dBm from 16 GHz to 39.6 GHz when the input power is 20 dBm. The application of the LH-NLTL frequency doubler furthermore validates the accuracy of the large-signal model of the PSVD.
基金Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 60806024)the Fundamental Research Funds for Central Universities, China (Grant No. XDJK2009C020)the Singapore–China Joint Research Project (Grant No. 2009DFA12130)
文摘A fabrication technology of GaAs planar Schottky varactor diode （PSVD） is successfully developed and used to design and manufacture CaAs-based monolithic frequency multiplication based on 23-section nonlinear transmission lines （NLTLs） consisting of a coplanar waveguide transmission line and periodically distributed PSVDs. The throughout design and optimization procedure of 23-section monolithic NLTLs for frequency multiplication in the k-band range is based on a large signal equivalent model of PSVD extracted from small-signal S-parameter measurements. This paper reports that the distributed SPVD exhibits a capacitance ratio of 5.4, a normalized capacitance of 0.86 fF/μm2 and a breakdown voltage in excess of 22 V. The integrated 23-section NLTLs fed by 20-dBm input power demonstrates a 26-GHz peak second harmonic output power of 14-dBm with 25.3% conversion efficiency in the second harmonic output frequency range of 6 GHz-26 GHz.
基金Project supported by the Fundamental Research Funds for Central Universities,China(Grant No.XDJK2013B004)the Research Fund for the Doctoral Program of Southwest University,China(Grant No.SWU111030)the State Key Laboratory for Millimeter Waves of Southeast University,China(Grant No.K201312)
文摘The epitaxial material, device structure, and corresponding equivalent large signal circuit model of GaAs planar Schottky varactor diode are successfully developed to design and fabricate a monolithic phase shifter, which is based on right-handed nonlinear transmission lines and consists of a coplanar waveguide transmission line and periodically distributed GaAs planar Schottky varactor diode. The distributed-Schottky transmission-line-type phase shifter at a bias voltage greater than 1.5 V presents a continuous 0°–360° differential phase shift over a frequency range from 0 to 33 GHz. It is demonstrated that the minimum insertion loss is about 0.5 dB and that the return loss is less than-10 dB over the frequency band of 0–33 GHz at a reverse bias voltage less than 4.5 V. These excellent characteristics, such as broad differential phase shift, low insertion loss, and return loss, indicate that the proposed phase shifter can entirely be integrated into a phased array radar circuit.
基金Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 60806024)the Fundamental Research Funds for Central University of China (Grant No. XDJK2009C020)
文摘GaAs-based planar Gunn diodes with A1GaAs hot electron injector have been successfully developed to be used as a local oscillator of 76 GHz in monolithic millimeter-wave integrated circuits. We designed two kinds of structure diode, one has a fixed distance between the anode and cathode, but has variational cathode area, the other has a fixed cathode area, but has different distances between two electrodes. The fabrication of Gunn diode is performed in accordance with the order of operations： cathode defining, mesa etching, anode defining, isolation, passivation, via hole and electroplating. A peak current density of 29.5 kA/cm^2 is obtained. And the charavteristics of negative differential resistance and the asymmetry of the current-voltage curve due to the A1GaAs hot electron injector are discussed in detail. It is demonstrated that the smaller size of active area corresponds to the smaller current, and the shorter distance between anode and cathode also corresponds to the lower threshold voltage and higher peak current, and hot electron injector can effectively enhance the radio frequency conversion efficiency and output power.
基金Project supported by the National Natural Science Foundation of China(No.60806024)
文摘A millimeter wave large-signal model of GaAs planar Schottky varactor diodes based on a physical analysis is presented.The model consists of nonlinear resistances and capacitances of the junction region and external parasitic parameters.By analyzing the characteristics of the diode under reverse and forward bias,an extraction procedure of all of the parameters is addressed.To validate the newly proposed model,the PSVDs were fabricated based on a planar process and were measured using an automatic network analyzer.Measurement shows that the model exactly represents the behavior of GaAs PSVDs under a wide bias condition from -10 to 0.6 V and for frequencies up to 40 GHz.
基金Project supported by the National Natural Science Foundation of China(No.60806024)the International Collaboration Program of the Ministry of Science and Technology(No.2009DFA12130)
文摘A broadband frequency doubler using left-handed nonlinear transmission lines（LH NLTLs） based on MMIC technology is reported for the first time.The second harmonic generation on LH NLTLs was analyzed theoretically. A four-section LH NLTL which has a layout of 5.4×0.8 mm^2 was fabricated on GaAs semi-insulating substrate. With 20-dBm input power,the doubler obtained 6.33 dBm peak output power at 26.8 GHz with 24-43 GHz—6 dBm bandwidth.The experimental results were quite consistent with the simulated results.The compactness and the broad band characteristics of the circuit make it well suit for GaAs RF/MMIC application.
基金supported by the Fundamental Research Funds for Central University of China(No.XDJK2013B004)the Research Fund for the Doctoral Program of Southwest University of China(No.SWU111030)the State Key Laboratory for Millimeter Waves of Southeast University of China(No.K201312)
文摘A GaAs-based planar Schottky varactor diode （PSVD） is successfully developed to meet the demand of millimeter-wave harmonic generation. Based on the measured S-parameter, I-V and C-V characteristics, an accurate and reliable extraction method of the millimeter-wave large signal equivalent circuit model of the PSVD is proposed and used to extract the model parameters of two PSVDs with Schottky contact areas of 160 μm2 and 49 μm2, respectively. The simulated S-parameter, I-V and C-V performances of the proposed physics-based model are in good agreement with the measured one over the frequency range from 0.1 to 40 GHz for wide operation bias range from -10 to 0.6 V for these two PSVDs. The proposed equivalent large signal circuit model of this PSVD has been proven to be reliable and can potentially be used to design microwave circuits.
