A type of oxadiazole-functionalized iridium complex is newly employed as red phosphor emitter in polymer lightemitting devices (PLEDs) using a blend of poly (9,9-dioctylfluorene)(PFO) and 2-tert-butylphenyl-5-bi...A type of oxadiazole-functionalized iridium complex is newly employed as red phosphor emitter in polymer lightemitting devices (PLEDs) using a blend of poly (9,9-dioctylfluorene)(PFO) and 2-tert-butylphenyl-5-biphenyl- 1,3,4-oxadiazole (PBD) as a host matrix. The devices show bright red electrophosphorescence with dominant peaks at about 593nm and shoulders at about 642nm. The highest luminance efficiency of 3.3 cd/A at 9.3 V and maximum luminance of 2912cd/m^2 at 14.0V are achieved in the devices. At current density of 100mA/cm^2, the devices still exhibit luminance efficiency of 2.2 cd/A and luminance of 2300 cd/m^2. This indicates that the oxadiazole-functionalized iridium complexes have improved optoelectronic properties in the devices at high current density.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 20272014, and the Science Foundation of the Ministry of Education of China under Grant No 204097, and the 0utstanding Youth Foundation of Hunan Province under Grant No 04JJ1002, and the Science Foundation of the Department of Education of Hunan Province under Grant No 03A049.
文摘A type of oxadiazole-functionalized iridium complex is newly employed as red phosphor emitter in polymer lightemitting devices (PLEDs) using a blend of poly (9,9-dioctylfluorene)(PFO) and 2-tert-butylphenyl-5-biphenyl- 1,3,4-oxadiazole (PBD) as a host matrix. The devices show bright red electrophosphorescence with dominant peaks at about 593nm and shoulders at about 642nm. The highest luminance efficiency of 3.3 cd/A at 9.3 V and maximum luminance of 2912cd/m^2 at 14.0V are achieved in the devices. At current density of 100mA/cm^2, the devices still exhibit luminance efficiency of 2.2 cd/A and luminance of 2300 cd/m^2. This indicates that the oxadiazole-functionalized iridium complexes have improved optoelectronic properties in the devices at high current density.