One-dimensional ZnO nanorods are synthesized by ox idating thin metal zinc films deposited on Si(111) substrates with radio frequen cy magnetron sputtering.The crystal structure,surface morphology,and optical pro per...One-dimensional ZnO nanorods are synthesized by ox idating thin metal zinc films deposited on Si(111) substrates with radio frequen cy magnetron sputtering.The crystal structure,surface morphology,and optical pro perties of nanorods are investigated.X-ray diffraction(XRD) pattern,scanning el ectron microscopy(SEM),and transmission electron microscopy(TEM) analyses show t hat the synthesized single-crystal ZnO nanorods develop like hairpins along dif ferent radials,with a hexagonal wurtzite structure.The diameters of nanorods ran ge between 30 and 60nm and lengths up to micrometers.Photoluminescence(PL) analy sis shows that,under 280nm light excitation,a strong and sharp near band-edge U V light emission band at 372nm and a relatively weak green deep-level light emi ssion band at 516nm are observed from the ZnO nanorods,which indicates excellent crystallization and optical quality of the fabricated ZnO nanorods.展开更多
研究了 Ga_2O_3/Al_2O_3 膜反应自组装制备 GaN 薄膜。首先利用磁控溅射法在硅衬底上制备 Ga_2O_3/Al2O3膜,再将Ga_2O_3/Al_2O_3 膜在高纯氨气气氛中氨化反应得到了 GaN 薄膜。用 X 射线衍射(XRD),X 光光电子能谱(XPS)、扫描电镜(SEM)...研究了 Ga_2O_3/Al_2O_3 膜反应自组装制备 GaN 薄膜。首先利用磁控溅射法在硅衬底上制备 Ga_2O_3/Al2O3膜,再将Ga_2O_3/Al_2O_3 膜在高纯氨气气氛中氨化反应得到了 GaN 薄膜。用 X 射线衍射(XRD),X 光光电子能谱(XPS)、扫描电镜(SEM)、透射电镜(TEM)和 荧光光谱(PL)对样品进行结构、组分、形貌和发光特性的分析。测试结果表明:用此方法得到了六方纤锌矿结构的 GaN 晶体膜。展开更多
文摘One-dimensional ZnO nanorods are synthesized by ox idating thin metal zinc films deposited on Si(111) substrates with radio frequen cy magnetron sputtering.The crystal structure,surface morphology,and optical pro perties of nanorods are investigated.X-ray diffraction(XRD) pattern,scanning el ectron microscopy(SEM),and transmission electron microscopy(TEM) analyses show t hat the synthesized single-crystal ZnO nanorods develop like hairpins along dif ferent radials,with a hexagonal wurtzite structure.The diameters of nanorods ran ge between 30 and 60nm and lengths up to micrometers.Photoluminescence(PL) analy sis shows that,under 280nm light excitation,a strong and sharp near band-edge U V light emission band at 372nm and a relatively weak green deep-level light emi ssion band at 516nm are observed from the ZnO nanorods,which indicates excellent crystallization and optical quality of the fabricated ZnO nanorods.
文摘研究了 Ga_2O_3/Al_2O_3 膜反应自组装制备 GaN 薄膜。首先利用磁控溅射法在硅衬底上制备 Ga_2O_3/Al2O3膜,再将Ga_2O_3/Al_2O_3 膜在高纯氨气气氛中氨化反应得到了 GaN 薄膜。用 X 射线衍射(XRD),X 光光电子能谱(XPS)、扫描电镜(SEM)、透射电镜(TEM)和 荧光光谱(PL)对样品进行结构、组分、形貌和发光特性的分析。测试结果表明:用此方法得到了六方纤锌矿结构的 GaN 晶体膜。
