With the need of the internet of things,big data,and artificial intelligence,creating new computing architecture is greatly desired for handling data-intensive tasks.Human brain can simultaneously process and store in...With the need of the internet of things,big data,and artificial intelligence,creating new computing architecture is greatly desired for handling data-intensive tasks.Human brain can simultaneously process and store information,which would reduce the power consumption while improve the efficiency of computing.Therefore,the development of brainlike intelligent device and the construction of brain-like computation are important breakthroughs in the field of artificial intelligence.Memristor,as the fourth fundamental circuit element,is an ideal synaptic simulator due to its integration of storage and processing characteristics,and very similar activities and the working mechanism to synapses among neurons which are the most numerous components of the brains.In particular,memristive synaptic devices with optoelectronic responding capability have the benefits of storing and processing transmitted optical signals with wide bandwidth,ultrafast data operation speed,low power consumption,and low cross-talk,which is important for building efficient brain-like computing networks.Herein,we review recent progresses in optoelectronic memristor for neuromorphic computing,including the optoelectronic memristive materials,working principles,applications,as well as the current challenges and the future development of the optoelectronic memristor.展开更多
As a low-bandgap ferroelectric material, BiFeO3 has gained wide attention for the potential photovoltaic applications,since its photovoltaic effect in visible light range was reported in 2009. In the present work, Bi...As a low-bandgap ferroelectric material, BiFeO3 has gained wide attention for the potential photovoltaic applications,since its photovoltaic effect in visible light range was reported in 2009. In the present work, Bi（Fe, Mn）O3thin films are fabricated by pulsed laser deposition method, and the effects of Mn doping on the microstructure, optical, leakage,ferroelectric and photovoltaic characteristics of Bi（Fe, Mn）O3 thin films are systematically investigated. The x-ray diffraction data indicate that Bi（Fe, Mn）O3 thin films each have a rhombohedrally distorted perovskite structure. From the light absorption results, it follows that the band gap of Bi（Fe, Mn）O3 thin films can be tuned by doping different amounts of Mn content. More importantly, photovoltaic measurement demonstrates that the short-circuit photocurrent density and the open-circuit voltage can both be remarkably improved through doping an appropriate amount of Mn content, leading to the fascinating fact that the maximum power output of ITO/BiFe（0.7）Mn（0.3）O3/Nb-STO capacitor is about 175 times higher than that of ITO/BiFeO3/Nb-STO capacitor. The improvement of photovoltaic response in Bi（Fe, Mn）O3 thin film can be reasonably explained as being due to absorbing more visible light through bandgap engineering and maintaining the ferroelectric property at the same time.展开更多
Ferroelectrics are a type of material with a polar structure and their polarization direction can be inverted reversibly by applying an electric field.They have attracted tremendous attention for their extensive appli...Ferroelectrics are a type of material with a polar structure and their polarization direction can be inverted reversibly by applying an electric field.They have attracted tremendous attention for their extensive applications in non-volatile memory,sensors and neuromorphic computing.However,conventional ferroelectric materials face insulating and interfacial issues in the commercialization process.In contrast,two-dimensional(2D)ferroelectric materials usually have excellent semiconductor performance,clean van der Waals interfaces and robust ferroelectric order in atom-thick layers,and hold greater promise for constructing multifunctional ferroelectric optoelectronic devices and nondestructive ultra-high-density memory.Recently,2D ferroelectrics have obtained impressive breakthroughs,showing overwhelming superiority.Herein,firstly,the progress of experimental research on 2D ferroelectric materials is reviewed.Then,the preparation of 2D ferroelectric devices and their applications are discussed.Finally,the future development trend of 2D ferroelectrics is looked at.展开更多
Rare-earth orthoferrite SmFeO3 is an outstanding single-phase multiferroic material,holding great potential in novel low-power electronic devices.Nevertheless,simultaneous magnetic and ferroelectric orders as well as ...Rare-earth orthoferrite SmFeO3 is an outstanding single-phase multiferroic material,holding great potential in novel low-power electronic devices.Nevertheless,simultaneous magnetic and ferroelectric orders as well as magnetoelectric(ME)coupling effect at room temperature(RT)in this system have not been demonstrated yet.In this study,epitaxial SmFeO3 films were successfully prepared onto tensile-strain Nb-SrTiO3(Nb-STO)substrates by a pulsed laser deposition(PLD)method.Measurement results show that the films exhibit obvious ferromagnetic and ferroelectric orders at RT.Meanwhile,the magnetic anisotropy gradually changes from out-of-plane(OP)to in-plane(IP)direction with increasing film thickness,which is attributed to the variations of O 2p-Fe 3d hybridization intensity and Fe 3d-orbit occupancy caused by the strain-relaxed effect.Moreover,electrically driven reversible magnetic switching further proves that the SmFeO3 films exhibit the RT ME coupling effect,suggesting promising applications in new-generation electric-write magnetic-read data storage devices.展开更多
Controlling the polar order in ferroelectric materials may enrich the diversity of their property and functionality,offering new opportunities for the design of novel electronic and optoelectronic devices.In this pape...Controlling the polar order in ferroelectric materials may enrich the diversity of their property and functionality,offering new opportunities for the design of novel electronic and optoelectronic devices.In this paper,we report a planar multi-state memory device built upon a twodimensional(2D)van der Waals layered ferroelectric material,2Hα-In_(2)Se_(3).Three(high,median and low)resistance states are demonstrated to be interconvertible in this device with a fast switching speed,excellent endurance and retention performances via the modulation of the polar order of the ferroelectricα-In_(2)Se_(3) layers under an in-plane electric field.Remarkably,reversible switching between the median-resistance state and the low-resistance state can be achieved by an ultralow electric field of 1-2 orders of magnitude smaller than the reported values in other 2D ferroelectric materialbased memory devices.Furthermore,the three different polar order states are discovered to exhibit distinctive photoresponses.These results demonstrate great potentials ofα-In_(2)Se_(3)in nonvolatile high-density memory and advanced optoelectronic device applications.展开更多
基金Project supported by the National Key R&D Program of China(Grant No.2017YFB0405600)the National Natural Science Foundation of China(Grant Nos.61674153,61722407,61974090,and 61904099)the Natural Science Foundation of Shanghai,China(Grant No.19ZR1474500)。
文摘With the need of the internet of things,big data,and artificial intelligence,creating new computing architecture is greatly desired for handling data-intensive tasks.Human brain can simultaneously process and store information,which would reduce the power consumption while improve the efficiency of computing.Therefore,the development of brainlike intelligent device and the construction of brain-like computation are important breakthroughs in the field of artificial intelligence.Memristor,as the fourth fundamental circuit element,is an ideal synaptic simulator due to its integration of storage and processing characteristics,and very similar activities and the working mechanism to synapses among neurons which are the most numerous components of the brains.In particular,memristive synaptic devices with optoelectronic responding capability have the benefits of storing and processing transmitted optical signals with wide bandwidth,ultrafast data operation speed,low power consumption,and low cross-talk,which is important for building efficient brain-like computing networks.Herein,we review recent progresses in optoelectronic memristor for neuromorphic computing,including the optoelectronic memristive materials,working principles,applications,as well as the current challenges and the future development of the optoelectronic memristor.
基金supported by the National Natural Science Foundation of China(Grant Nos.11274322,51402318,61404080,and 61675066)the National Key Technology Research and Development Program of China(Grant No.2016YFA0201102)the China Postdoctoral Science Foundation(Grant No.2016LH0050)
文摘As a low-bandgap ferroelectric material, BiFeO3 has gained wide attention for the potential photovoltaic applications,since its photovoltaic effect in visible light range was reported in 2009. In the present work, Bi（Fe, Mn）O3thin films are fabricated by pulsed laser deposition method, and the effects of Mn doping on the microstructure, optical, leakage,ferroelectric and photovoltaic characteristics of Bi（Fe, Mn）O3 thin films are systematically investigated. The x-ray diffraction data indicate that Bi（Fe, Mn）O3 thin films each have a rhombohedrally distorted perovskite structure. From the light absorption results, it follows that the band gap of Bi（Fe, Mn）O3 thin films can be tuned by doping different amounts of Mn content. More importantly, photovoltaic measurement demonstrates that the short-circuit photocurrent density and the open-circuit voltage can both be remarkably improved through doping an appropriate amount of Mn content, leading to the fascinating fact that the maximum power output of ITO/BiFe（0.7）Mn（0.3）O3/Nb-STO capacitor is about 175 times higher than that of ITO/BiFeO3/Nb-STO capacitor. The improvement of photovoltaic response in Bi（Fe, Mn）O3 thin film can be reasonably explained as being due to absorbing more visible light through bandgap engineering and maintaining the ferroelectric property at the same time.
基金Project supported by the National Key Research and Development Program of China (Grant No.2022YFB3505301)the National Natural Science Foundation of China (Grant Nos.12241403 and12174237)the Graduate Education Innovation Project in Shanxi Province (Grant No.2021Y484)。
文摘Ferroelectrics are a type of material with a polar structure and their polarization direction can be inverted reversibly by applying an electric field.They have attracted tremendous attention for their extensive applications in non-volatile memory,sensors and neuromorphic computing.However,conventional ferroelectric materials face insulating and interfacial issues in the commercialization process.In contrast,two-dimensional(2D)ferroelectric materials usually have excellent semiconductor performance,clean van der Waals interfaces and robust ferroelectric order in atom-thick layers,and hold greater promise for constructing multifunctional ferroelectric optoelectronic devices and nondestructive ultra-high-density memory.Recently,2D ferroelectrics have obtained impressive breakthroughs,showing overwhelming superiority.Herein,firstly,the progress of experimental research on 2D ferroelectric materials is reviewed.Then,the preparation of 2D ferroelectric devices and their applications are discussed.Finally,the future development trend of 2D ferroelectrics is looked at.
基金This work was supported by the National Natural Science Foundation of China(51871137,51901118,51571136 and 61904099).The authors acknowledge Shanghai Synchrotron Radiation Facility at the Beamline BL08U1A and the National Synchrotron Radiation Laboratory at the Beamline BL12-a for the XAS measurements.
文摘Rare-earth orthoferrite SmFeO3 is an outstanding single-phase multiferroic material,holding great potential in novel low-power electronic devices.Nevertheless,simultaneous magnetic and ferroelectric orders as well as magnetoelectric(ME)coupling effect at room temperature(RT)in this system have not been demonstrated yet.In this study,epitaxial SmFeO3 films were successfully prepared onto tensile-strain Nb-SrTiO3(Nb-STO)substrates by a pulsed laser deposition(PLD)method.Measurement results show that the films exhibit obvious ferromagnetic and ferroelectric orders at RT.Meanwhile,the magnetic anisotropy gradually changes from out-of-plane(OP)to in-plane(IP)direction with increasing film thickness,which is attributed to the variations of O 2p-Fe 3d hybridization intensity and Fe 3d-orbit occupancy caused by the strain-relaxed effect.Moreover,electrically driven reversible magnetic switching further proves that the SmFeO3 films exhibit the RT ME coupling effect,suggesting promising applications in new-generation electric-write magnetic-read data storage devices.
基金supported by the National Natural Science Foundation of China(12174237,61904099,52002232 and 51871137)the Graduate Science and Technology Innovation Project of Shanxi Normal University(01053013)。
文摘Controlling the polar order in ferroelectric materials may enrich the diversity of their property and functionality,offering new opportunities for the design of novel electronic and optoelectronic devices.In this paper,we report a planar multi-state memory device built upon a twodimensional(2D)van der Waals layered ferroelectric material,2Hα-In_(2)Se_(3).Three(high,median and low)resistance states are demonstrated to be interconvertible in this device with a fast switching speed,excellent endurance and retention performances via the modulation of the polar order of the ferroelectricα-In_(2)Se_(3) layers under an in-plane electric field.Remarkably,reversible switching between the median-resistance state and the low-resistance state can be achieved by an ultralow electric field of 1-2 orders of magnitude smaller than the reported values in other 2D ferroelectric materialbased memory devices.Furthermore,the three different polar order states are discovered to exhibit distinctive photoresponses.These results demonstrate great potentials ofα-In_(2)Se_(3)in nonvolatile high-density memory and advanced optoelectronic device applications.
