1 064 nm, 532 nm frequency-doubled antireflection （AR） coatings with buffer layer of SiO2 between the coating and the substrate were fabricated by the electron beam evaporation technology on the substrate of lithium...1 064 nm, 532 nm frequency-doubled antireflection （AR） coatings with buffer layer of SiO2 between the coating and the substrate were fabricated by the electron beam evaporation technology on the substrate of lithium triborate （LiB3O5 or LBO） crystals. The residual reflectance of the sample is 0.07% and 0.11% at 1 064 nm and 532 nm, respectively. The adhesion and the laser-induced damage threshold （LIDT） of the sample are greater than 200 mN and 18.6 J/cm2. The strengthening mechanism of adhesion and LIDT of the buffer layer of SiO2 were discussed by considering full plastic indentation and shear theory, and spallation of a plated film induced by thermal shock stress, respectively.展开更多
基金Funded by the Doctorial Start-up Fund of the Department of Science and Technology of Liaoning Province (20081030)
文摘1 064 nm, 532 nm frequency-doubled antireflection （AR） coatings with buffer layer of SiO2 between the coating and the substrate were fabricated by the electron beam evaporation technology on the substrate of lithium triborate （LiB3O5 or LBO） crystals. The residual reflectance of the sample is 0.07% and 0.11% at 1 064 nm and 532 nm, respectively. The adhesion and the laser-induced damage threshold （LIDT） of the sample are greater than 200 mN and 18.6 J/cm2. The strengthening mechanism of adhesion and LIDT of the buffer layer of SiO2 were discussed by considering full plastic indentation and shear theory, and spallation of a plated film induced by thermal shock stress, respectively.
