针对宇航用大容量SRAM器件抗单粒子效应性能的试验评估需要,利用重离子加速器对抗辐射加固32 M Bulk CMOS工艺SRAM和16 M SOI CMOS工艺SRAM进行了单粒子效应模拟试验研究,获得SRAM器件单粒子效应特性并进行在轨翻转率预估;对单粒子翻转...针对宇航用大容量SRAM器件抗单粒子效应性能的试验评估需要,利用重离子加速器对抗辐射加固32 M Bulk CMOS工艺SRAM和16 M SOI CMOS工艺SRAM进行了单粒子效应模拟试验研究,获得SRAM器件单粒子效应特性并进行在轨翻转率预估;对单粒子翻转试验中重离子射程的影响,不同SEU类型的翻转截面差异,在轨翻转率预估的有关因素等进行了分析讨论。结果表明,这2款抗辐射加固SRAM器件都达到了较高的抗单粒子效应性能指标。试验结果可以为SRAM器件的单粒子效应试验评估提供参考。展开更多
The threshold voltage(V_(th))of the p-channel metal-oxide-semiconductor field-effect transistors(MOSFETs)is investigated via Silvaco-Atlas simulations.The main factors which influence the threshold voltage of p-channe...The threshold voltage(V_(th))of the p-channel metal-oxide-semiconductor field-effect transistors(MOSFETs)is investigated via Silvaco-Atlas simulations.The main factors which influence the threshold voltage of p-channel GaN MOSFETs are barrier heightΦ_(1,p),polarization charge density σ_(b),and equivalent unite capacitance C_(oc).It is found that the thinner thickness of p-GaN layer and oxide layer will acquire the more negative threshold voltage V_(th),and threshold voltage|V_(th)|increases with the reduction in p-GaN doping concentration and the work-function of gate metal.Meanwhile,the increase in gate dielectric relative permittivity may cause the increase in threshold voltage|V_(th)|.Additionally,the parameter influencing output current most is the p-GaN doping concentration,and the maximum current density is 9.5 mA/mm with p-type doping concentration of 9.5×10^(16) cm^(-3) at VGS=-12 V and VDS=-10 V.展开更多
文摘针对宇航用大容量SRAM器件抗单粒子效应性能的试验评估需要,利用重离子加速器对抗辐射加固32 M Bulk CMOS工艺SRAM和16 M SOI CMOS工艺SRAM进行了单粒子效应模拟试验研究,获得SRAM器件单粒子效应特性并进行在轨翻转率预估;对单粒子翻转试验中重离子射程的影响,不同SEU类型的翻转截面差异,在轨翻转率预估的有关因素等进行了分析讨论。结果表明,这2款抗辐射加固SRAM器件都达到了较高的抗单粒子效应性能指标。试验结果可以为SRAM器件的单粒子效应试验评估提供参考。
基金Project supported by the Key-Area Research and Development Program of Guangdong Province,China(Grant Nos.2020B010174001 and 2020B010171002)the Ningbo Science and Technology Innovation Program 2025(Grant No.2019B10123)the National Natural Science Foundation of China(Grant No.62074122).
文摘The threshold voltage(V_(th))of the p-channel metal-oxide-semiconductor field-effect transistors(MOSFETs)is investigated via Silvaco-Atlas simulations.The main factors which influence the threshold voltage of p-channel GaN MOSFETs are barrier heightΦ_(1,p),polarization charge density σ_(b),and equivalent unite capacitance C_(oc).It is found that the thinner thickness of p-GaN layer and oxide layer will acquire the more negative threshold voltage V_(th),and threshold voltage|V_(th)|increases with the reduction in p-GaN doping concentration and the work-function of gate metal.Meanwhile,the increase in gate dielectric relative permittivity may cause the increase in threshold voltage|V_(th)|.Additionally,the parameter influencing output current most is the p-GaN doping concentration,and the maximum current density is 9.5 mA/mm with p-type doping concentration of 9.5×10^(16) cm^(-3) at VGS=-12 V and VDS=-10 V.
