双波长外腔面发射激光器

双波长激光光源在干涉测量、非线性频率变换产生中红外及太赫兹波段相干辐射等方面有重要的应用.外腔面发射激光器具有输出功率高、光束质量好、发射波长可设计等突出优势,非常适合用于双波长的产生.用有源区为In0.185Ga0.815As/GaAs应变多量子阱、设计波长为960 nm,以及有源区为In0.26Ga0.74As/GaAsP0.02应变多量子阱、设计波长为1080 nm的两块半导体增益芯片,在一个共线Y型谐振腔中,获得了激光波长分别为953 nm和1100 nm的双波长输出,对应光谱线宽为1.1 nm和2.7 nm,波长间隔147 nm.室温下,每块增益芯片的抽运吸收功率均为5.8 W时,双波长激光器总的输出功率达到293 mW.

Mode characteristics of VCSELs with different shape and size oxidation apertures

Vertical cavity surface emitting laser(VCSELs)as the ideal light source for rubidium(Rb)and cesium(Cs)atomic clocks is analyzed for its mode and polarization control.We fabricated three kinds of shapes:triangular,elliptic,and circular oxidation apertures which also have different sizes.We formed three different shape oxide apertures by wetoxidation with 36μm-39μm circular mesa.Our results show that triangular oxidized-VCSEL has the advantages of mode and polarization selection over elliptic and circular oxide apertures.When triangular oxide-confined VCSELs emit in single mode,the measured side mode suppression ratio(SMSR)is larger than 20 d B and orthogonal polarization suppression ratio achieves 10 d B.Resonant blueshift of VCSELs with triangular and elliptic apertures is observed with the decrease of aperture size.

小型化可调谐外腔面发射绿光激光器

以InGaAs多量子阱为有源区材料,以对抽运光透明的AlGaAs/AlAs为后端分布布拉格反射镜材料,采用后端抽运方式,在腔内插入标准具作为滤波元件,通过腔内倍频,获得小型化可调谐的光抽运外腔面发射绿光激光器。作为滤波元件,标准具可压窄基频光的光谱半峰全宽。为了阻止倍频光返回到增益芯片,标准具镀有倍频光高反膜。激光器的基频光调谐范围超过10 nm,倍频绿光在中心波长559 nm处的调谐范围为4 nm,光谱半峰全宽为1.0 nm,最大输出功率为65 mW。