High mobility quasi two-dimensional electron gas(2DEG)found at the CaZrO_(3)/SrTiO_(3) nonpolar heterointerface is attractive and provides a platform for the development of functional devices and nanoelectronics.Here ...High mobility quasi two-dimensional electron gas(2DEG)found at the CaZrO_(3)/SrTiO_(3) nonpolar heterointerface is attractive and provides a platform for the development of functional devices and nanoelectronics.Here we report that the carrier density and mobility at low temperature can be tuned by gate voltage at the CaZrO_(3)/SrTiO_(3) interface.Furthermore,the magnitude of Rashba spin-orbit interaction can be modulated and increases with the gate voltage.Remarkably,the diffusion constant and the spin-orbit relaxation time can be strongly tuned by gate voltage.The diffusion constant increases by a factor of~19.98 and the relaxation time is reduced by a factor of over three orders of magnitude while the gate voltage is swept from-50 V to 100 V.These findings not only lay a foundation for further understanding the underlying mechanism of Rashba spin-orbit coupling,but also have great significance in developing various oxide functional devices.展开更多
We study systematically the negative magnetoresistance(MR)effect in WTe_(2±α)flakes with different thicknesses and doping concentrations.The negative MR is sensitive to the relative orientation between electrica...We study systematically the negative magnetoresistance(MR)effect in WTe_(2±α)flakes with different thicknesses and doping concentrations.The negative MR is sensitive to the relative orientation between electrical-/magnetic-field and crystallographic orientation of WTe_(2±α).The analysis proves that the negative MR originates from chiral anomaly and is anisotropic.Maximum entropy mobility spectrum is used to analyze the electron and hole concentrations in the flake samples.It is found that the negative MR observed in WTe_(2±α)flakes with low doping concentration is small,and the high doping concentration is large.The doping-induced disorder obviously inhibits the positive MR,so the negative MR can be more easily observed.In a word,we introduce disorder to suppress positive MR by doping,and successfully obtain the negative MR in WTe_(2±α)flakes with different thicknesses and doping concentrations,which indicates that the chiral anomaly effect in WTe_(2)is robust.展开更多
High-quality Sr_(2)CrWO_(6)(SCWO) films have been grown on SrTiO_(3)(STO) substrate by pulsed laser deposition under low oxygen pressure. With decrease of the film thickness, a drastic conductivity increase is observe...High-quality Sr_(2)CrWO_(6)(SCWO) films have been grown on SrTiO_(3)(STO) substrate by pulsed laser deposition under low oxygen pressure. With decrease of the film thickness, a drastic conductivity increase is observed. The Hall measurements show that the thicker the film, the lower the carrier density. An extrinsic mechanism of charge doping due to the dominance of oxygen vacancies at SCWO/STO interfaces is proposed. The distribution and gradient of carrier concentration in SCWO films are considered to be related to this phenomenon. Resistivity behavior observed in these films is found to follow the variable range hopping model. It is revealed that with increase of the film thickness, the extent of disorder in the lattice increases, which gives a clear evidence of disorder-induced localization charge carriers in these films.Magnetoresistance measurements show that there is a negative magnetoresistance in SCWO films, which is considered to be caused by the magnetic scattering of magnetic elements Cr^(3+) and W^(5+). In addition, a sign reversal of anisotropic magnetoresistance(AMR) in SCWO film is observed for the first time, when the temperature varies across a characteristic value, T_(M). Magnetization-temperature measurements demonstrate that this AMR sign reversal is caused by the direction transition of easy axis of magnetization from the in-plane ferromagnetic order at T > T_(M) to the out-of-plane at T < T_(M).展开更多
The origin of the quantum superconductor to metal transition at zero temperature in two-dimensional superconductors is still an open problem,which has caused intensely discussion.Here,we report the observation of a qu...The origin of the quantum superconductor to metal transition at zero temperature in two-dimensional superconductors is still an open problem,which has caused intensely discussion.Here,we report the observation of a quantum superconductor-to-metal transition in La Al O_(3)/KTa O_(3)(111)interface,driven by magnetic field.When a small magnetic field perpendicular to the film plane is applied,the residual saturated resistance is observed,indicating the emergence of an anomalous metallic state associated with a failed superconductor.The dependence of saturated resistance on magnetic field at low temperature indicates that the observed metal state is a Bose metal state.From our findings,magnetic field regulating La Al O_(3)/KTa O_(3)(111)interface emerges as a platform to scrutinize the details of the anomalous metallic state in a controllable way.展开更多
在异质外延薄膜的生长中,应力对薄膜的结构和形貌起着至关重要的作用.理论研究表明,在非公度的薄膜中,应力可以通过形成质量密度波(MDW,Mass Density Wave)的形式释放出来.但是,迄今为止还没有直接的证据证明质量密度波的存在.本文我们...在异质外延薄膜的生长中,应力对薄膜的结构和形貌起着至关重要的作用.理论研究表明,在非公度的薄膜中,应力可以通过形成质量密度波(MDW,Mass Density Wave)的形式释放出来.但是,迄今为止还没有直接的证据证明质量密度波的存在.本文我们用扫描隧道显微镜(STM,Scanning Tunnelling Microscopy)在Bi(001)表面形成的单层红荧烯薄膜中,直接观察到了质量密度波.其表现形式为表面高度有微小的正弦波动,并且分子取向发生周期性畸变.此外,我们还指出质量密度波的形成是由于红荧烯单层膜相对Bi衬底的晶格转动所导致的,由于转动方向不同,质量密度波会呈现出条形或之字形两种不同形状的条纹.展开更多
基金supported by the National Natural Science Foundation of China(Grants Nos.92065110,11974048,and 12074334)。
文摘High mobility quasi two-dimensional electron gas(2DEG)found at the CaZrO_(3)/SrTiO_(3) nonpolar heterointerface is attractive and provides a platform for the development of functional devices and nanoelectronics.Here we report that the carrier density and mobility at low temperature can be tuned by gate voltage at the CaZrO_(3)/SrTiO_(3) interface.Furthermore,the magnitude of Rashba spin-orbit interaction can be modulated and increases with the gate voltage.Remarkably,the diffusion constant and the spin-orbit relaxation time can be strongly tuned by gate voltage.The diffusion constant increases by a factor of~19.98 and the relaxation time is reduced by a factor of over three orders of magnitude while the gate voltage is swept from-50 V to 100 V.These findings not only lay a foundation for further understanding the underlying mechanism of Rashba spin-orbit coupling,but also have great significance in developing various oxide functional devices.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.92065110,11674031,11974048,12074334)the National Basic Research Program of China(Grant Nos.2014CB920903 and 2013CB921701)。
文摘We study systematically the negative magnetoresistance(MR)effect in WTe_(2±α)flakes with different thicknesses and doping concentrations.The negative MR is sensitive to the relative orientation between electrical-/magnetic-field and crystallographic orientation of WTe_(2±α).The analysis proves that the negative MR originates from chiral anomaly and is anisotropic.Maximum entropy mobility spectrum is used to analyze the electron and hole concentrations in the flake samples.It is found that the negative MR observed in WTe_(2±α)flakes with low doping concentration is small,and the high doping concentration is large.The doping-induced disorder obviously inhibits the positive MR,so the negative MR can be more easily observed.In a word,we introduce disorder to suppress positive MR by doping,and successfully obtain the negative MR in WTe_(2±α)flakes with different thicknesses and doping concentrations,which indicates that the chiral anomaly effect in WTe_(2)is robust.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 92065110, 11974048, and 12074334)。
文摘High-quality Sr_(2)CrWO_(6)(SCWO) films have been grown on SrTiO_(3)(STO) substrate by pulsed laser deposition under low oxygen pressure. With decrease of the film thickness, a drastic conductivity increase is observed. The Hall measurements show that the thicker the film, the lower the carrier density. An extrinsic mechanism of charge doping due to the dominance of oxygen vacancies at SCWO/STO interfaces is proposed. The distribution and gradient of carrier concentration in SCWO films are considered to be related to this phenomenon. Resistivity behavior observed in these films is found to follow the variable range hopping model. It is revealed that with increase of the film thickness, the extent of disorder in the lattice increases, which gives a clear evidence of disorder-induced localization charge carriers in these films.Magnetoresistance measurements show that there is a negative magnetoresistance in SCWO films, which is considered to be caused by the magnetic scattering of magnetic elements Cr^(3+) and W^(5+). In addition, a sign reversal of anisotropic magnetoresistance(AMR) in SCWO film is observed for the first time, when the temperature varies across a characteristic value, T_(M). Magnetization-temperature measurements demonstrate that this AMR sign reversal is caused by the direction transition of easy axis of magnetization from the in-plane ferromagnetic order at T > T_(M) to the out-of-plane at T < T_(M).
基金the National Natural Science Foundation of China(Grant Nos.92065110,11974048,and 12074334)the National Basic Research Program of China(Grant Nos.2014CB920903 and 2013CB921701)。
文摘The origin of the quantum superconductor to metal transition at zero temperature in two-dimensional superconductors is still an open problem,which has caused intensely discussion.Here,we report the observation of a quantum superconductor-to-metal transition in La Al O_(3)/KTa O_(3)(111)interface,driven by magnetic field.When a small magnetic field perpendicular to the film plane is applied,the residual saturated resistance is observed,indicating the emergence of an anomalous metallic state associated with a failed superconductor.The dependence of saturated resistance on magnetic field at low temperature indicates that the observed metal state is a Bose metal state.From our findings,magnetic field regulating La Al O_(3)/KTa O_(3)(111)interface emerges as a platform to scrutinize the details of the anomalous metallic state in a controllable way.
文摘在异质外延薄膜的生长中,应力对薄膜的结构和形貌起着至关重要的作用.理论研究表明,在非公度的薄膜中,应力可以通过形成质量密度波(MDW,Mass Density Wave)的形式释放出来.但是,迄今为止还没有直接的证据证明质量密度波的存在.本文我们用扫描隧道显微镜(STM,Scanning Tunnelling Microscopy)在Bi(001)表面形成的单层红荧烯薄膜中,直接观察到了质量密度波.其表现形式为表面高度有微小的正弦波动,并且分子取向发生周期性畸变.此外,我们还指出质量密度波的形成是由于红荧烯单层膜相对Bi衬底的晶格转动所导致的,由于转动方向不同,质量密度波会呈现出条形或之字形两种不同形状的条纹.
