当前,氮化镓(gallium nitride,GaN)高电子迁移率晶体管(high electron mobility transistors,HEMTs)器件已逐渐被广泛应用。然而,退化问题仍然是困扰其高可靠应用的重要因素。特别是开态应力下,器件的退化机理值得深入研究。文章基于实...当前,氮化镓(gallium nitride,GaN)高电子迁移率晶体管(high electron mobility transistors,HEMTs)器件已逐渐被广泛应用。然而,退化问题仍然是困扰其高可靠应用的重要因素。特别是开态应力下,器件的退化机理值得深入研究。文章基于实验测试及仿真,重点研究了氮化镓射频HEMT器件在开态应力下的退化现象与机理。研究结果表明,单一的高漏压应力并不会对器件带来明显退化,而高漏压与大的漏极电流结合则会对器件产生明显退化,这一影响重点集中在栅极与漏极之间的有源区。需要注意的是,栅极偏置电压在沟道电子进入栅下区域的过程中也起到了重要作用。开态应力下,栅极偏压形成的垂直电场会使得器件栅下区域损伤更加严重。文章的研究成果可以为氮化镓射频器件在复杂环境下的高可靠性应用提供重要支撑。展开更多
The single event effect(SEE) sensitivity of silicon–germanium heterojunction bipolar transistor(Si Ge HBT) irradiated by 100-Me V proton is investigated. The simulation results indicate that the most sensitive positi...The single event effect(SEE) sensitivity of silicon–germanium heterojunction bipolar transistor(Si Ge HBT) irradiated by 100-Me V proton is investigated. The simulation results indicate that the most sensitive position of the Si Ge HBT device is the emitter center, where the protons pass through the larger collector-substrate(CS) junction. Furthermore, in this work the experimental studies are also carried out by using 100-Me V proton. In order to consider the influence of temperature on SEE, both simulation and experiment are conducted at a temperature of 93 K. At a cryogenic temperature, the carrier mobility increases, which leads to higher transient current peaks, but the duration of the current decreases significantly.Notably, at the same proton flux, there is only one single event transient(SET) that occurs at 93 K. Thus, the radiation hard ability of the device increases at cryogenic temperatures. The simulation results are found to be qualitatively consistent with the experimental results of 100-Me V protons. To further evaluate the tolerance of the device, the influence of proton on Si Ge HBT after gamma-ray(^(60)Coγ) irradiation is investigated. As a result, as the cumulative dose increases, the introduction of traps results in a significant reduction in both the peak value and duration of the transient currents.展开更多
根据5G信号对通道带宽的要求,通过研究陶瓷基板中“类同轴”互连的微波特性,设计了一种新型非垂直互连结构,通过陶瓷介电层之间金属化通孔的错位设计,改善垂直过孔与水平传输线转弯处的阻抗突变,更有利于高频信号的传输,进一步扩展带宽...根据5G信号对通道带宽的要求,通过研究陶瓷基板中“类同轴”互连的微波特性,设计了一种新型非垂直互连结构,通过陶瓷介电层之间金属化通孔的错位设计,改善垂直过孔与水平传输线转弯处的阻抗突变,更有利于高频信号的传输,进一步扩展带宽。分析了错位角度、阶梯级数、焊球半径和焊球间距对传输性能的影响,设计并实现了宽带低损耗互连陶瓷基板。测试结果表明,该结构的最高应用频率可达55 GHz,在DC-55 GHz频带内插入损耗小于1.5 dB,回波损耗大于15 dB,同时利用实测数据进行信号传输验证,结果表明在未引入预加重、均衡的情况下即可满足56 G/112 G NRZ,112 G PAM4高速信号的传输。展开更多
文摘当前,氮化镓(gallium nitride,GaN)高电子迁移率晶体管(high electron mobility transistors,HEMTs)器件已逐渐被广泛应用。然而,退化问题仍然是困扰其高可靠应用的重要因素。特别是开态应力下,器件的退化机理值得深入研究。文章基于实验测试及仿真,重点研究了氮化镓射频HEMT器件在开态应力下的退化现象与机理。研究结果表明,单一的高漏压应力并不会对器件带来明显退化,而高漏压与大的漏极电流结合则会对器件产生明显退化,这一影响重点集中在栅极与漏极之间的有源区。需要注意的是,栅极偏置电压在沟道电子进入栅下区域的过程中也起到了重要作用。开态应力下,栅极偏压形成的垂直电场会使得器件栅下区域损伤更加严重。文章的研究成果可以为氮化镓射频器件在复杂环境下的高可靠性应用提供重要支撑。
基金Project supported by the National Natural Science Foundation of China (Grant Nos.61574171,61704127,11875229,51872251,and 12027813)。
文摘The single event effect(SEE) sensitivity of silicon–germanium heterojunction bipolar transistor(Si Ge HBT) irradiated by 100-Me V proton is investigated. The simulation results indicate that the most sensitive position of the Si Ge HBT device is the emitter center, where the protons pass through the larger collector-substrate(CS) junction. Furthermore, in this work the experimental studies are also carried out by using 100-Me V proton. In order to consider the influence of temperature on SEE, both simulation and experiment are conducted at a temperature of 93 K. At a cryogenic temperature, the carrier mobility increases, which leads to higher transient current peaks, but the duration of the current decreases significantly.Notably, at the same proton flux, there is only one single event transient(SET) that occurs at 93 K. Thus, the radiation hard ability of the device increases at cryogenic temperatures. The simulation results are found to be qualitatively consistent with the experimental results of 100-Me V protons. To further evaluate the tolerance of the device, the influence of proton on Si Ge HBT after gamma-ray(^(60)Coγ) irradiation is investigated. As a result, as the cumulative dose increases, the introduction of traps results in a significant reduction in both the peak value and duration of the transient currents.
文摘根据5G信号对通道带宽的要求,通过研究陶瓷基板中“类同轴”互连的微波特性,设计了一种新型非垂直互连结构,通过陶瓷介电层之间金属化通孔的错位设计,改善垂直过孔与水平传输线转弯处的阻抗突变,更有利于高频信号的传输,进一步扩展带宽。分析了错位角度、阶梯级数、焊球半径和焊球间距对传输性能的影响,设计并实现了宽带低损耗互连陶瓷基板。测试结果表明,该结构的最高应用频率可达55 GHz,在DC-55 GHz频带内插入损耗小于1.5 dB,回波损耗大于15 dB,同时利用实测数据进行信号传输验证,结果表明在未引入预加重、均衡的情况下即可满足56 G/112 G NRZ,112 G PAM4高速信号的传输。
