The ohmic contact interface between diamond and metal is essential for the application of diamond detectors.Surface modification can significantly affect the contact performance and eliminate the interface polarizatio...The ohmic contact interface between diamond and metal is essential for the application of diamond detectors.Surface modification can significantly affect the contact performance and eliminate the interface polarization effect.However,the radiation stability of a diamond detector is also sensitive to surface modification.In this work,the influence of surface modification technology on a diamond ohmic contact under high-energy radiation was investigated.Before radiation,the specific contact resistivities(ρc)between Ti/Pt/Au-hydrogen-terminated diamond(H-diamond)and Ti/Pt/Au-oxygenterminated diamond(O-diamond)were 2.0×10^(-4)W·cm^(2) and 4.3×10^(-3)Wcm^(2),respectively.After 10 MeV electron radiation,the ρc of Ti/Pt/Au H-diamond and Ti/Pt/Au O-diamond were 5.3×10^(-3)W·cm^(2)and 9.1×10^(-3)W·cm^(2),respectively.The rates of change of ρc of H-diamond and O-diamond after radiation were 2550%and 112%,respectively.The electron radiation promotes bond reconstruction of the diamond surface,resulting in an increase in ρc.展开更多
采用微波等离子体技术在CH4-H2-C2H6气体条件下制备了钛基掺硼金刚石薄膜。四点探针法测得薄膜电阻率在零掺杂时为1×1012Ω·cm,当反应气源中B/C上升为5×10-3时电阻率降至5×10-3Ω·cm。扫描电镜显示掺硼金刚石...采用微波等离子体技术在CH4-H2-C2H6气体条件下制备了钛基掺硼金刚石薄膜。四点探针法测得薄膜电阻率在零掺杂时为1×1012Ω·cm,当反应气源中B/C上升为5×10-3时电阻率降至5×10-3Ω·cm。扫描电镜显示掺硼金刚石具有完整晶型和致密结构。拉曼光谱观察到金刚石结构在掺杂前后发生明显改变。采用循环伏安测试了Ti/BDD电极的电化学参量,并与PbO2,Sn-Sb and PbO2-Er三种电极进行阳极氧化对-硝基酚的对比实验。结果表明,在Ti/BDD电极上,对-硝基酚的总有机碳去除率接近100%,远高于其它三种电极。展开更多
基金Project supported by the National Key Research and Development Program of China(Grant No.2022YFB3608601).
文摘The ohmic contact interface between diamond and metal is essential for the application of diamond detectors.Surface modification can significantly affect the contact performance and eliminate the interface polarization effect.However,the radiation stability of a diamond detector is also sensitive to surface modification.In this work,the influence of surface modification technology on a diamond ohmic contact under high-energy radiation was investigated.Before radiation,the specific contact resistivities(ρc)between Ti/Pt/Au-hydrogen-terminated diamond(H-diamond)and Ti/Pt/Au-oxygenterminated diamond(O-diamond)were 2.0×10^(-4)W·cm^(2) and 4.3×10^(-3)Wcm^(2),respectively.After 10 MeV electron radiation,the ρc of Ti/Pt/Au H-diamond and Ti/Pt/Au O-diamond were 5.3×10^(-3)W·cm^(2)and 9.1×10^(-3)W·cm^(2),respectively.The rates of change of ρc of H-diamond and O-diamond after radiation were 2550%and 112%,respectively.The electron radiation promotes bond reconstruction of the diamond surface,resulting in an increase in ρc.
文摘采用微波等离子体技术在CH4-H2-C2H6气体条件下制备了钛基掺硼金刚石薄膜。四点探针法测得薄膜电阻率在零掺杂时为1×1012Ω·cm,当反应气源中B/C上升为5×10-3时电阻率降至5×10-3Ω·cm。扫描电镜显示掺硼金刚石具有完整晶型和致密结构。拉曼光谱观察到金刚石结构在掺杂前后发生明显改变。采用循环伏安测试了Ti/BDD电极的电化学参量,并与PbO2,Sn-Sb and PbO2-Er三种电极进行阳极氧化对-硝基酚的对比实验。结果表明,在Ti/BDD电极上,对-硝基酚的总有机碳去除率接近100%,远高于其它三种电极。
