Correction to:Nano-Micro Lett.(2023)15:223 https://doi.org/10.1007/s40820-023-01189-0 In this article the author’s name“Hao-Chung Kuo”was incorrectly written as“Hao-Chung Guo”.And in the last sentence of the firs...Correction to:Nano-Micro Lett.(2023)15:223 https://doi.org/10.1007/s40820-023-01189-0 In this article the author’s name“Hao-Chung Kuo”was incorrectly written as“Hao-Chung Guo”.And in the last sentence of the first paragraph of Introduction,the text‘(20-20)’should have read‘(20-21)’.The original article has been corrected.展开更多
Room temperature low threshold lasing of green GaNbased vertical cavity surface emitting laser(VCSEL)was demonstrated under continuous wave(CW)operation.By using self-formed InGaN quantum dots(QDs)as the active region...Room temperature low threshold lasing of green GaNbased vertical cavity surface emitting laser(VCSEL)was demonstrated under continuous wave(CW)operation.By using self-formed InGaN quantum dots(QDs)as the active region,the VCSEL emitting at 524.0 nm has a threshold current density of 51.97 A cm^(-2),the lowest ever reported.The QD epitaxial wafer featured with a high IQE of 69.94%and theδ-function-like density of states plays an important role in achieving low threshold current.Besides,a short cavity of the device(~4.0λ)is vital to enhance the spontaneous emission coupling factor to 0.094,increase the gain coefficient factor,and decrease the optical loss.To improve heat dissipation,AlN layer was used as the current confinement layer and electroplated copper plate was used to replace metal bonding.The results provide important guidance to achieving high performance GaN-based VCSELs.展开更多
文摘Correction to:Nano-Micro Lett.(2023)15:223 https://doi.org/10.1007/s40820-023-01189-0 In this article the author’s name“Hao-Chung Kuo”was incorrectly written as“Hao-Chung Guo”.And in the last sentence of the first paragraph of Introduction,the text‘(20-20)’should have read‘(20-21)’.The original article has been corrected.
基金This work was supported by the National Natural Science Foundation of China(Nos.U21A20493,62104204,and 62234011)the National Key Research and Development Program of China(No.2017YFE0131500)the President’s Foundation of Xiamen University(No.20720220108).
文摘Room temperature low threshold lasing of green GaNbased vertical cavity surface emitting laser(VCSEL)was demonstrated under continuous wave(CW)operation.By using self-formed InGaN quantum dots(QDs)as the active region,the VCSEL emitting at 524.0 nm has a threshold current density of 51.97 A cm^(-2),the lowest ever reported.The QD epitaxial wafer featured with a high IQE of 69.94%and theδ-function-like density of states plays an important role in achieving low threshold current.Besides,a short cavity of the device(~4.0λ)is vital to enhance the spontaneous emission coupling factor to 0.094,increase the gain coefficient factor,and decrease the optical loss.To improve heat dissipation,AlN layer was used as the current confinement layer and electroplated copper plate was used to replace metal bonding.The results provide important guidance to achieving high performance GaN-based VCSELs.
