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11.2 W/mm power density AlGaN/GaN high electron-mobility transistors on a GaN substrate 被引量:1
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作者 Yansheng Hu Yuangang Wang +11 位作者 Wei Wang Yuanjie Lv Hongyu Guo Zhirong Zhang Hao Yu Xubo Song Xingye zhou Tingting Han Shaobo Dun Hongyu Liu aimin bu Zhihong Feng 《Journal of Semiconductors》 EI CAS CSCD 2024年第1期38-41,共4页
In this letter,high power density AlGaN/GaN high electron-mobility transistors(HEMTs)on a freestanding GaN substrate are reported.An asymmetricΓ-shaped 500-nm gate with a field plate of 650 nm is introduced to improv... In this letter,high power density AlGaN/GaN high electron-mobility transistors(HEMTs)on a freestanding GaN substrate are reported.An asymmetricΓ-shaped 500-nm gate with a field plate of 650 nm is introduced to improve microwave power performance.The breakdown voltage(BV)is increased to more than 200 V for the fabricated device with gate-to-source and gate-to-drain distances of 1.08 and 2.92μm.A record continuous-wave power density of 11.2 W/mm@10 GHz is realized with a drain bias of 70 V.The maximum oscillation frequency(f_(max))and unity current gain cut-off frequency(f_(t))of the AlGaN/GaN HEMTs exceed 30 and 20 GHz,respectively.The results demonstrate the potential of AlGaN/GaN HEMTs on freestanding GaN substrates for microwave power applications. 展开更多
关键词 freestanding GaN substrates AlGaN/GaN HEMTs continuous-wave power density breakdown voltage Γ-shaped gate
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2.83-kV double-layered NiO/β-Ga_(2)O_(3) vertical p-n heterojunction diode with a power figure-of-merit of 5.98 GW/cm^(2)
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作者 Tingting Han Yuangang Wang +4 位作者 Yuanjie Lv Shaobo Dun Hongyu Liu aimin bu Zhihong Feng 《Journal of Semiconductors》 EI CAS CSCD 2023年第7期28-31,共4页
This work demonstrates high-performance NiO/β-Ga_(2)O_(3) vertical heterojunction diodes(HJDs)with double-layer junc-tion termination extension(DL-JTE)consisting of two p-typed NiO layers with varied lengths.The bott... This work demonstrates high-performance NiO/β-Ga_(2)O_(3) vertical heterojunction diodes(HJDs)with double-layer junc-tion termination extension(DL-JTE)consisting of two p-typed NiO layers with varied lengths.The bottom 60-nm p-NiO layer fully covers theβ-Ga_(2)O_(3) wafer,while the geometry of the upper 60-nm p-NiO layer is 10μm larger than the square anode elec-trode.Compared with a single-layer JTE,the electric field concentration is inhibited by double-layer JTE structure effectively,resulting in the breakdown voltage being improved from 2020 to 2830 V.Moreover,double p-typed NiO layers allow more holes into the Ga_(2)O_(3) drift layer to reduce drift resistance.The specific on-resistance is reduced from 1.93 to 1.34 mΩ·cm^(2).The device with DL-JTE shows a power figure-of-merit(PFOM)of 5.98 GW/cm^(2),which is 2.8 times larger than that of the conven-tional single-layer JTE structure.These results indicate that the double-layer JTE structure provides a viable way of fabricating high-performance Ga_(2)O_(3) HJDs. 展开更多
关键词 β-Ga_(2)O_(3) breakdown voltage heterojunction diode(HJD) junction termination extension(JTE) power figure-of-merit(PFOM)
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High-stability _(4)H-SiC avalanche photodiodes for UV detection at high temperatures 被引量:1
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作者 周幸叶 吕元杰 +5 位作者 郭红雨 宋旭波 王元刚 梁士雄 卜爱民 冯志红 《Chinese Optics Letters》 SCIE EI CAS CSCD 2023年第3期123-126,共4页
In this work,high-stability _[4]H-SiC avalanche photodiodes[APDs]for ultraviolet[UV]detection at high temperatures are fabricated and investigated.With the temperature increasing from room temperature to 150℃,a very ... In this work,high-stability _[4]H-SiC avalanche photodiodes[APDs]for ultraviolet[UV]detection at high temperatures are fabricated and investigated.With the temperature increasing from room temperature to 150℃,a very small temperature coefficient of 7.4 m V/℃is achieved for the avalanche breakdown voltage of devices.For the first time,the stability of 4H-SiC APDs is verified based on an accelerated aging test with harsh stress conditions.Three different stress conditions are selected with the temperatures and reverse currents of 175℃/100μA,200℃/100μA,and 200℃/500μA,respectively.The results show that our 4H-SiC APD exhibits robust high-temperature performance and can even endure more than120 hours at the harsh aging condition of 200℃/500μA,which indicates that 4H-SiC APDs are very stable and reliable for applications at high temperatures. 展开更多
关键词 silicon carbide photodiod
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