Corrective Effect of the Angle of Incidence of the Magnetic Field Intensity on the Performance (Series and Shunt Resistances) of a Bifacial Silicon Solar Cell

This article presents a three-dimensional analysis of the impact of the angle of incidence of the magnetic field intensity on the electrical performance (series resistance, shunt resistance) of a bifacial polycrystalline silicon solar cell. The cell is illuminated simultaneously from both sides. The continuity equation for the excess minority carriers is solved at the emitter and at the depth of the base respectively. The analytical expressions for photocurrent density, photovoltage, series resistance and shunt resistance were deduced. Using these expressions, the values of the series and shunt resistances were extracted for different values of the angle of incidence of the magnetic field intensity. The study shows that as the angle of incidence increases, the slopes of the minority carrier density for the two modes of operation of the solar cell decrease. This is explained by a drop in the accumulation of carriers in the area close to the junction due to the fact that the Lorentz force is unable to drive the carriers towards the lateral surfaces due to the weak action of the magnetic field, which tends to cancel out as the incidence angle increases, and consequently a drop in the open circuit photovoltage. This, in turn, reduces the Lorentz force. These results predict that the p-n junction of the solar cell will not heat up. The study also showed a decrease in series resistance as the incidence angle of the magnetic field intensity increased from 0 rad to π/2 rad and an increase in shunt resistance as the incidence angle increased. His behaviour of the electrical parameters when the angle of incidence of the field from 0 rad to π/2 rad shows that the decreasing magnetic field vector tends to be collinear with the electron trajectory. This allows them to cross the junction and participate in the external current. The best orientation for the Lorentz force is zero, in which case the carriers can move easily towards the junction.

Investigating the Impact of Base Heating and External Electric Field on PV Cell Performance under Intense Illumination

The characterization of the performances of a PV cell is linked to intrinsic factors of this cell. It is therefore important for us to identify the favorable or unfavorable conditions that affect the performance of PV cells. It is from this perspective that it seems judicious to us to study the simultaneous influence of the heating of the base and an external electric field on the performance of a PV cell under intense illumination of 50 suns. Two phenomena contribute to the heating of the base of a PV cell which is heating due to the transfer by conduction of solar radiation energy received by the surface of the PV cell and the heat generated inside the PV cell by various phenomena linked to the movement of photogenerated charged carriers. In this study, we take into account the heating linked to the movement of the charged carriers in the base. After a mathematical modeling of the PV cell considered, some hypotheses are formulated and the expressions of the electrical parameters are established as a function of the electric field and base temperature. Subsequently, we use numerical simulation to highlight the behavior of theses parameters as a function of temperature and of the intensity of the electric field. The results show that for any given temperature, the orientation of the electric field as considered in our work improves the performance of the PV cell while high temperatures degrade these performances. Furthermore, the analysis of the curves shows that the harmful effect of temperature on the performance of a PV cell is more accentuated at large values of electric field.

Investigation of the Behavior of a Photovoltaic Cell under Concentration as a Function of the Temperature of the Base and a Variable External Magnetic Field in 3D Approximation

The photovoltaic (PV) cell performances are connected to the base photogenerated carriers charge. Some studies showed that the quantity of the photogenerated carriers charge increases with the increase of the solar illumination. This situation explains the choice of concentration PV cell (C = 50 suns) in this study. However, the strong photogeneration of the carriers charge causes a high heat production by thermalization, collision and carriers charge braking due to the electric field induced by concentration gradient. This heat brings the heating of the PV cell base. That imposes the taking into account of the temperature influence in the concentrator PV cell operation. Moreover, with the proliferation of the magnetic field sources in the life space, it is important to consider its effect on the PV cell performances. Thus, when magnetic field and base temperature increase simultaneously, we observe a deterioration of the photovoltage, the electric power, the space charge region capacity, the fill factor and the conversion efficiency. However the photocurrent increases when the base temperature increases and the magnetic field strength decreases. It appears an inversion phenomenon in the evolution of the electrical parameters as a function of magnetic field for the values of magnetic field B> 4×10-4 T.

Experimental Study of the Evolution of Temperatures in Pavement Structures and Influence of Traffic on the RN1 in Burkina Faso in a Hot and Dry Climate

Asphalt concrete pavements in hot and dry climates deteriorate prematurely some time after their construction. This degradation is accelerated under the effect of heavy vehicle traffic pressure and high temperatures after the bitumen has softened. A study was conducted on the RN1 in Burkina Faso in order to analyze the evolution of temperature and traffic in the process of degradation of asphalt concrete pavements. It consisted on the one hand in recording the temperatures at different points inside the layers of asphalt concrete pavements and the layer of laterite. These results were compared with the values of the softening temperatures of the bitumen obtained in the laboratory. On the other hand, this study is supplemented by the daily counting of heavy goods vehicles passing through the RN1 during the month of April in order to study the influence of the evolution of heavy goods vehicle traffic on the degradation of pavements in hot and dry climatic conditions. The results obtained for temperatures and the frequency of heavy goods vehicle traffic favor pavement deterioration under certain conditions.

Temperature Effect on Light Concentration Silicon Solar Cell’s Operating Point and Conversion Efficiency

It is well known that temperature acts negatively on practically all the parameters of photovoltaic solar cells. Also, the solar cells which are subjected to particularly very high temperatures are the light concentration solar cells and are used in light concentration photovoltaic systems (CPV). In fact, the significant heating of these solar cells is due to the concentration of the solar flux which arrives on them. Light concentration solar cells appear as solar cells under strong influences of heating and temperature. It is therefore necessary to take into account temperature effect on light concentration solar cells performances in order to obtain realistic results. This one-dimensional study of a crystalline silicon solar cell under light concentration takes into account electrons concentration gradient electric field in the determination of the continuity equation of minority carriers in the base. To determine excess minority carrier’s density, the effects of temperature on the diffusion and mobility of electrons and holes, on the intrinsic concentration of electrons, on carrier’s generation rate as well as on width of band gap have also been taken into account. The results show that an increase of temperature improves diffusion parameters and leads to an increase of the short-circuit photocurrent density. However, an increase of temperature leads to a significant decrease in open-circuit photovoltage, maximum electric power and conversion efficiency. The results also show that the operating point and the maximum power point (MPP) moves to the open circuit when the cell temperature increases.

Analysis and Comparison of Doping Level Effects on a Crystalline Silicon PV Cell under Both Moderate Light Concentration and Normal Illumination Modes

The main purpose of this work is to study doping level effects on a silicon PV cell under both moderate light concentration and normal illumination. This study also aims to compare the doping level effects under the both illumination modes. The results show for both illumination modes that diffusion parameters decrease with increasing doping level. These results are in agreement with the studies of the current and the voltage which showed for the two illumination modes that doping level increase leads to a decrease in current density and an increase in voltage. It also emerges for the two illumination modes and for the doping range 1013 cm-3 - 1016 cm-3, a decrease of maximum power and conversion efficiency. The results also show that decrease of diffusion parameters is faster under moderate concentration in comparison with normal illumination. These results predict a greater variation rate of the current, the voltage, the maximum power and the conversion efficiency under moderate concentration compared to normal illumination. Contrary to diffusion parameters study, the results show higher variation rates of parameters under normal illumination. This is explained by the fact that under moderate concentration, carriers density is close to doping level: the cell is then in high injection condition. Consequently, under moderate concentration, carriers density is less sensitive to doping level variations. The study confirms that carriers density variation with the doping level is weak under the moderate concentration compared to normal illumination.

3-D Modeling of Temperature Effect on a Polycrystalline Silicon Solar Cell under Intense Light Illumination

The efficiency of a silicon solar cell is directly linked to the quantity of carrier photogenerated in its base. It increases with the increase of the quantity of carrier in the base of the solar cell. The carrier density in the base of the solar cell increases with the increase of the flux of photons that crosses the solar cell. One of the methods used to increase the flux of photon on the illuminated side of the solar cell is the intensification of the illumination light. However, the intensification of the light come with the increase of the energy released by thermalization, the collision between carriers, their braking due to the carriers concentration gradient electric field which lead to increase the temperature in the base of the solar cell. This work presents a 3-D study, of the effect of the temperature on the electronic parameters of a polycrystalline silicon solar under intense light illumination. The electronic parameters on which we analyze the temperature effect are:?the mobility of solar cell carriers?(electrons and holes),?their diffusion coefficient, their diffusion length and their distribution in the bulk of the base. To study the effect of the temperature on electronic parameters, we take into account, the dependence of carriers (electrons and holes) mobility with the temperature (μn,(T)?μp(T)). Then, the resolution of the continuity equation,which is a function of the carriers gradient electric field and the carriers mobility,?leads to the expressions of?the diffusion coefficient, the diffusion length, and the density of carriers which are function of the temperature. Then, we studied the effects of the temperature on the diffusion parameters in order to explain their effect on the behavior the carriers distribution in intermediate, short circuit and open circuit operating modes at several positions in the base depth. It appears through this study that the diffusion coefficient and the diffusion length decrease with the increase of the temperature. We observe also that with the increase of the temperature, the density of carriers in the base of the solar cell in short circuit and open voltage operating modes increases. In intermediate operating mode, the density of carriers increases also with the temperature but it is function of the base depth.