Ti ion implantation was implanted into PVD-TiN films using a metal vapor vacuum arc (MEVVA) ion source with a low implantation dose and at a time-averaged ion beam current density of 25|O.A-cm’2. The wear characteris...Ti ion implantation was implanted into PVD-TiN films using a metal vapor vacuum arc (MEVVA) ion source with a low implantation dose and at a time-averaged ion beam current density of 25|O.A-cm’2. The wear characteristics of the implanted zone was measured and compared to the performance of unimplanted zone by a pin-on-disc apparatus and an optical interference microscope. The structure of the implanted zone and unimplanted zone was observed by X-ray photoelectron spectroscopy (XPS) and high voltage electron microscopy (HVEM). The wear mechanisms of the TiN film after ion implantation were discussed according to the results of XPS and HVEM.展开更多
基金supported partly by Science and Technology Engineering of Nantong(2004032)Nantong Institute of Technology(200347)
文摘Ti ion implantation was implanted into PVD-TiN films using a metal vapor vacuum arc (MEVVA) ion source with a low implantation dose and at a time-averaged ion beam current density of 25|O.A-cm’2. The wear characteristics of the implanted zone was measured and compared to the performance of unimplanted zone by a pin-on-disc apparatus and an optical interference microscope. The structure of the implanted zone and unimplanted zone was observed by X-ray photoelectron spectroscopy (XPS) and high voltage electron microscopy (HVEM). The wear mechanisms of the TiN film after ion implantation were discussed according to the results of XPS and HVEM.
