Low-noise and low-power pixel sensor chip for gas pixel detectors

Topmetal-M2 is a large-area pixel sensor chip fabricated using the GSMC 130 nm CMOS process in 2021.The pixel array of Topmetal-M2 consists of pixels of 400 rows×512 columns with a pixel pitch of 45μm×45μm.The array is divided into 16 subarrays,with pixels of 400 rows×32 columns per subarray.Each pixel incorporates two charge sensors:a diode sensor and a Topmetal sensor.The in-pixel circuit primarily consists of a charge-sensitive amplifier for energy measurements,a discriminator with a peak-holding circuit,and a time-to-amplitude converter for time-of-arrival measurements.The pixel of Topmetal-M2 has a charge input range of~0-3 k e-,a voltage output range of~0-180 mV,and a charge-voltage conversion gain of~59.56μV∕e-.The average equivalent noise charge of Topmetal-M2,which includes the readout electronic system noise,is~43.45 e-.In the scanning mode,the time resolution of Topmetal-M2 is 1 LSB=1.25μs,and the precision is^()7.41μs.At an operating voltage of 1.5 V,Topmetal-M2 has a power consumption of~49 mW∕cm~2.In this article,we provide a comprehensive overview of the chip architecture,pixel working principles,and functional behavior of Topmetal-M2.Furthermore,we present the results of preliminary tests conducted on Topmetal-M2,namely,alpha-particle and soft X-ray tests.

NνDEx-100 conceptual design report

Observing nuclear neutrinoless double beta (0vββ) decay would be a revolutionary result in particle physics.Observing such a decay would prove that the neutrinos are their own antiparticles,help to study the absolute mass of neutrinos,explore the origin of their mass,and may explain the matter-antimatter asymmetry in our universe by lepton number violation.We propose developing a time projection chamber (TPC) using high-pressure ^(82)SeF_(6) gas and Topmetal silicon sensors for readout in the China Jinping Underground Laboratory (CJPL) to search for neutrinoless double beta decay of82Se,called the NvDEx experiment.Besides being located at CJPL with the world’s thickest rock shielding,NvDEx combines the advantages of the high Qββ(2.996 MeV) of82Se and the TPC’s ability to distinguish signal and background events using their different topological characteristics.This makes NvDEx unique,with great potential for low-background and high-sensitivity 0 vββsearches.NvDEx-100,a NvDEx experiment phase with 100 kg of SeF_(6)gas,is being built,with plans to complete installation at CJPL by 2025.This report introduces 0 vββ physics,the NvDEx concept and its advantages,and the schematic design of NvDEx-100,its subsystems,and background and sensitivity estimation.

Design and tests of the prototype a beam monitor of the CSR external target experiment

A prototype beam monitor was designed to provide tracking information for heavy-ion projectiles for the cool storage ring(CSR)external target experiment(CEE)at the Heavy Ion Research Facility in Lanzhou(HIRFL).High granularity and direct charge sensing are the main features of this device.It measures the beam position in a two-dimensional(2D)plane transverse to the beam direction on an event-by-event basis.The current design consists of two field cages inside a single vessel that operates independently and has electrical drift fields in orthogonal directions.Preliminary tests of the prototype were performed using a^(241)Am a source.The results show that a spatial resolution of less than 40μm and a time resolution of less than 600 ns can be achieved.

Prototype of single-event effect localization system with CMOS pixel sensor

The single-event effect(SEE) is a serious threat to electronics in radiation environments. The most important issue in radiation-hardening studies is the localization of the sensitive region in electronics to the SEE. To solve this problem, a prototype based on a complementary metal oxide semiconductor(CMOS) pixel sensor, i.e., TopmetalM, was designed for SEE localization. A beam test was performed on the prototype at the radiation terminal of the Heavy Ion Research Facility in Lanzhou(HIRFL). The results indicated that the inherent deflection angle of the prototype to the beam was 1.7°, and the angular resolution was 0.6°. The prototype localized heavy ions with a position resolution of 3.4 μm.

CMOS direct conversion X-ray detector coupled with fluorinated liquid

X-ray detectors show potential applications in medical imaging,materials science,and nuclear energy.To achieve high detection efficiency and spatial resolution,many conventional semiconductor materials,such as amorphous selenium,cadmium telluride zinc,and perovskites,have been utilized in direct conversion X-ray detectors.However,these semiconductor materials are susceptible to temperature-induced performance degradation,crystallization,delamination,uneven lattice growth,radiation damage,and high dark current.This study explores a new approach by coupling an FC40 electronic fluorinated liquid with a specialized high-resolution and high-readout-speed complementary metal-oxide-semiconductor(CMOS)pixel array,specifically the Topmetal II−chip,to fabricate a direct conversion X-ray detector.The fluorinated liquid FC40(molecular formula:C_(21)F_(48)N_(2))is an electronic medium that is minimally affected by temperature and displays no issues with uniform conductivity.It exhibits a low dark current and minimal radiation damage and enables customizable thickness in X-ray absorption.This addresses the limitations inherent in conventional semiconductor-based detectors.In this study,simple X-ray detector imaging tests were conducted,demonstrating the excellent coupling capability between FC40 electronic fluorinated liquid and CMOS chips by the X-ray detector.A spatial resolution of 4.0 lp/mm was measured using a striped line par card,and a relatively clear image of a cockroach was displayed in the digital radiography imaging results.Preliminary test results indicated the feasibility of fabricating an X-ray detector by combining FC40 electronic fluorinated liquid and CMOS chips.Owing to the absence of issues related to chip-material coupling,a high spatial resolution could be achieved by reducing the chip pixel size.This method presents a new avenue for studies on novel liquid-based direct conversion X-ray detectors.