Accelerated Sequential Deposition Reaction via Crystal Orientation Engineering for Low-Temperature,High-Efficiency Carbon-Electrode CsPbBr_(3) Solar Cells

Low-temperature,ambient processing of high-quality CsPbBr_(3)films is demanded for scalable production of efficient,low-cost carbon-electrode perovskite solar cells(PSCs).Herein,we demonstrate a crystal orientation engineering strategy of PbBr_(2)precursor film to accelerate its reaction with CsBr precursor during two-step sequential deposition of CsPbBr_(3)films.Such a novel strategy is proceeded by adding CsBr species into PbBr_(2)precursor,which can tailor the preferred crystal orientation of PbBr_(2)film from[020]into[031],with CsBr additive staying in the film as CsPb_(2)Br_(5)phase.Theoretical calculations show that the reaction energy barrier of(031)planes of PbBr_(2)with CsBr is lower about 2.28 eV than that of(O2O)planes.Therefore,CsPbBr_(3)films with full coverage,high purity,high crystallinity,micro-sized grains can be obtained at a low temperature of 150℃.Carbon-electrode PSCs with these desired CsPbBr_(3)films yield the record-high efficiency of 10.27%coupled with excellent operation stability.Meanwhile,the 1 cm^(2)area one with the superior efficiency of 8.00%as well as the flexible one with the champion efficiency of 8.27%and excellent mechanical bending characteristics are also achieved.

Interfacial Voids Trigger Carbon-Based, All-Inorganic Cs Pb IBr2 Perovskite Solar Cells with Photovoltage Exceeding 1.33 V

A novel interface design is proposed for carbon-based,all-inorganic CsPbIBr2 perovskite solar cells(PSCs)by introducing interfacial voids between TiO2 electron transport layer and CsPbIBr2 absorber.Compared with the general interfacial engineering strategies,this design exempts any extra modification layer in final PSC.More importantly,the interfacial voids produced by thermal decomposition of 2-phenylethylammonium iodide trigger three beneficial e ects.First,they promote the light scattering in CsPbIBr2 film and thereby boost absorption ability of the resulting CsPbIBr2 PSCs.Second,they suppress recombination of charge carriers and thus reduce dark saturation current density(J0)of the PSCs.Third,interfacial voids enlarge built-in potential(Vbi)of the PSCs,awarding increased driving force for dissociating photo-generated charge carriers.Consequently,the PSC yields the optimized e ciency of 10.20%coupled with an open-circuit voltage(Voc)of 1.338 V.The Voc achieved herein represents the best value among CsPbIBr2 PSCs reported earlier.Meanwhile,the non-encapsulated PSCs exhibit an excellent stability against light,thermal,and humidity stresses,since it remains^97%or^94%of its initial e ciency after being heated at 85℃for 12 h or stored in ambient atmosphere with relative humidity of 30–40%for 60 days,respectively.

无真空、低成本Mist-CVD外延制备高质量单晶NiO/Ga_(2)O_(3)p-n异质结与器件

在氧化镓(Ga_(2)O_(3))材料p型掺杂困难的背景下,Ga_(2)O_(3)p-n异质结器件在氧化镓器件的应用中起着重要作用.因此,寻找一种高效、经济的制备方法制备Ga_(2)O_(3)异质结对器件应用具有重要意义.在这项工作中,我们成功基于低成本、无真空的雾化学气相沉积(Mist-CVD)外延制备了单晶氧化镍(NiO)和β-Ga_(2)O_(3)异质结.其中,NiO(111)和β-Ga_(2)O_(3)(-201)的XRD摇摆曲线半高宽分别为0.077°和0.807°.NiO与β-Ga_(2)O_(3)之间的能带表现为Ⅱ型异质结构.基于此异质结,我们制备了准垂直器件,器件具有明显的p-n结整流特性,反向击穿电压为117 V.本工作为β-Ga_(2)O_(3)异质p-n结的制备提供了一种低成本、高质量的方法.

Recent progress of Ga_(2)O_(3)materials and devices based on the low-cost,vacuum-free Mist-CVD epitaxial growth method

Compared with silicon,gallium nitride,silicon carbide,and other traditional semiconductors,gallium oxide(Ga_(2)O_(3))who possesses,an ultrawide bandgap of approximately 5.0 eV and a higher breakdown field strength of approximately 8 MV/cm has attracted increasing attention from researchers,especially for the potential application in power devices.Moreover,Ga_(2)O_(3)material has natural ultraviolet detection ability for photodetectors due to its ultrawide bandgap.These future commercial applications put forward an urgent require for high-quality epitaxial Ga_(2)O_(3)material in an efficient growth method at a lower cost.Although there are some conventional methods for single crystal Ga_(2)O_(3)film epitaxial growth such as MBE and MOCVD,these methods always need a vacuum growth environment and expensive equipment.As a fast-growing method,Mist-CVD gives the growth of Ga_(2)O_(3)in a vacuum-free,process-simple,and low-cost method,which will greatly reduce the cost and facilitate the development of Ga_(2)O_(3).This review has summarizes the Mist-CVD epitaxy growth mechanism of Ga_(2)O_(3),recent progress in the Ga_(2)O_(3)film epitaxial growth,and various device properties based on the Mist-CVD method.Our work aims to provide help for the development of Ga_(2)O_(3)material growth and device applications.

Graded Heterojunction Improves Wide-Bandgap Perovskite for Highly Efficient 4-Terminal Perovskite/Silicon Tandem Solar Cells

Wide-bandgap(WBG)perovskite solar cells(PSCs)are essential for highly efficient and stable silicon/perovskite tandem solar cells.In this study,we adopted a synthetic strategy with lead thiocyanate(Pb(SCN)_(2))additive and methylammonium chloride(MACl)posttreatment to enhance the crystallinity and improve the interface of WBG perovskite films with a bandgap of 1.68 eV.The excessive PbI_(2)was formed at grain boundaries and converted into MAPbI_(3-x)Cl_(x)perovskites,which are utilized to form the graded heterojunction(GHJ)and compressive strain.This is beneficial for passivating nonradiative recombination defects,suppressing halide phase segregation,and facilitating carrier extraction.Subsequently,the device with GHJ delivered a champion efficiency of 20.30%and superior stability in ambient air and under 85℃.Finally,we achieved a recorded efficiency of 30.91%for 4-terminal WBG perovskite/TOPCon tandem silicon solar cells.Our findings demonstrate a promising approach for fabricating efficient and stable WBG PSCs through the formation of GHJ.

Ultrahigh fill-factor all-inorganic CsPbBr_(3)perovskite solar cells processed from two-step solution method and solvent additive strategy

All-inorganic CsPbBr_(3)perovskite solar cells(PSCs)have attracted more attentions due to the excellent environmental stability,however,the wide bandgap and relatively poor crystallinity of CsPbBr_(3)have been the main obstacle to improve their power conversion efficiency(PCE).Herein,we proposed an efficient and simple strategy of precursor additive in the two-step aqueous-solution method,the resulted CsPbBr_(3)film has achieved more uniform grain size,almost pure perovskite phase,smoother surface,less defects,enhanced light absorption and longer carrier lifetime.This is due to the rapid evaporation of additive(IPA and CH_(3)OH)in the CsBr/H_(2)O precursor leads to a relatively higher local CsBr concentration on the surface of PbBr_(2),which can provide more nucleation sites and accelerate the crystallization of perovskite.Further,when utilizing the optimal additive of 5%(in volume)IPA,the HTM-free carbonbased CsPbBr_(3)PSCs obtained a PCE improvement from 9.09%to 10.29%,and an ultrahigh fill factor(FF)of 85.21%.What is more,by adding 0.1 mol/L PbCl_(2)into the PbBr_(2)solution in the first step,the open circuit voltage of device has increased from 1.36 V to 1.48 V,the champion PCE reached 10.37%(steady output PCE of 10.17%),and the non-encapsulated device could maintain 85%of its initial efficiency after 50 d in the air.This work provides a cost-effective approach to grow CsPbBr_(3)film and boosts the efficiency benchmark of the CsPbBr_(3)PSCs to more than 10%,it is desirable that the highly efficient and stable CsPbBr_(3)PSCs can be developed in future.

Wide-range-adjusted threshold voltages for E-mode AlGaN/GaN HEMT with a p-SnO cap gate

p-GaN cap layer has been recognized as a commercial technology to manufacture enhanced-mode(E-mode)AlGaN/GaN high electron mobility transistor(HEMT);however,the difficult activation of Mg doping and etching damage of p-GaN limit the further improvement of device performance.Thus,the more cost-effective cap layer has attracted wide attention in GaN-based HEMT.In this paper,p-type tin monoxide(p-SnO)was firstly investigated as a gate cap to realize E-mode AlGaN/GaN HEMT by both Silvaco simulation and experiment.Simulation results show that by simply adjusting the thickness(50 to 200 nm)or the doping concentration(3×10^(17)to 3×10^(18)cm^(-3))of p-SnO,the threshold voltage(V_(th))of HEMT can be continuously adjusted in the range from zero to 10 V.Simultaneously,the device demonstrated a drain current density above 120 mA mm^(-1),a gate breakdown voltage(V_(BG))of 7.5 V and a device breakdown voltage(V_(B))of 2470 V.What is more,the etching-free AlGaN/GaN HEMT with sputtered p-SnO gate cap were fabricated,and achieved a positive V_(th) of 1 V,V_(BG) of 4.2 V and V_(B) of 420 V,which confirms the application potential of the p-SnO film as a gate cap layer for E-mode GaN-based HEMT.This work is instructive to the design and manufacture of p-oxide gate cap E-mode AlGaN/GaN HEMT with low cost.

Slow halide exchange in CsPbIBr_(2) films for high-efficiency,carbon-based,all-inorganic perovskite solar cells

Halide exchange offers a versatile way to modify the properties of halide perovskites,but it is particularly challenging to slow the reaction rate to restrain defect growth in the products.Herein,we propose a slow halide exchange strategy to simultaneously fine-tune the optical and microstructural characteristics of CsPbIBr_(2) films by physically pairing CsPbIBr_(2) and CH_(3)NH_(3)PbI_(3) films.Once a proper heating treatment is applied,halide exchange of Br^(-)and I^(-)ions between the films is activated,and the reaction rate can be well-controlled by the heating recipe,in which a high temperature can accelerate the exchange reaction,while a low temperature slows or stops it.By using an optimal halide exchange temperature(110℃)and time(2 h),the parent CsPbIBr_(2) film was transformed into high-quality CsPbI_(1+x)Br_(2-x) film,featuring an extended absorption onset from 590 to 625 nm,coarsened grains,improved crystallinity,reduced surface roughness,suppressed halide phase segregation,and identical stability to the pristine film.Accordingly,the efficiency of a carbon-based,all-inorganic perovskite solar cell(PSC)was boosted to 10.94%,which was much higher than that of the pristine CsPbIBr_(2) film(8.21%).The CsPbI_(1+x)Br_(2-x) PSC also possessed excellent tolerance against heat and moisture stresses.

Research on the hydrogen terminated single crystal diamond MOSFET with MoO_3 dielectric and gold gate metal

The single crystal diamond with maximum width about 10 mm has been grown by using microwave plasma chemical vapor deposition equipment. The quality of the grown diamond was characterized using an X-ray diffractometer. The FWHM of the（004） rocking curve is 37.91 arcsec, which is comparable to the result of the electronic grade single crystal diamond commercially obtained from Element Six Ltd. The hydrogen terminated diamond field effect transistors with Au/Mo03 gates were fabricated based on our CVD diamond and the characteristics of the device were compared with the prototype Al/MoO3 gate. The device with the Au/MoO3 gate shows lower on-resistance and higher gate leakage current. The detailed analysis indicates the presence of aluminum oxide at the Al/MoO3 interface, which has been directly demonstrated by characterizing the interface between A1 and MoO3 by X-ray photoelectron spectroscopy. In addition, there should be a surface transfer doping effect of the MoO3 layer on H-diamond even with the atmospheric-adsorbate induced 2 DHG preserved after MoO3 deposition.