As a direct wide bandgap semiconductor,CsPbCl_(3)has great potential applications in the eld of near-ultraviolet photodetectors,lasers and higher-order multiphoton uores-cent detectors.In this work,we synthesized CsPb...As a direct wide bandgap semiconductor,CsPbCl_(3)has great potential applications in the eld of near-ultraviolet photodetectors,lasers and higher-order multiphoton uores-cent detectors.In this work,we synthesized CsPbCl_(3)micro/nanocrystals by vapor depo-sition method with CsCl and PbCl_(2)powders as the source materials.It was con rmed that the formation of CsPbCl_(3)perovskite through the chemical reaction of CsCl with PbCl_(2)occurred in the quartz boat before the source evaporation,not in vapor or on sub-strate surface.The evaporated CsPbCl_(3)can form micro/nanocrystals on substrate surfaces under appropriate conditions.Various morphologies including irregular polyhedrons,rods and pyramids could be observed at lower temperature,while stable and uniform CsPbCl_(3)single crystal microplatelets were controllably synthesized at 450℃.Prolonging the growth time could modulate the size and density of the microcrystals,but could not change the morphology.Substrate types made little di erence to the morphology of CsPbCl_(3)crystals.The photoluminescence spectra indicated that the crystallinity and morphology of CsPbCl_(3)micro/nanocrystals have signi cant e ects on their optical properties.The work is expected to be helpful to the development of optoelectronic devices based on individual CsPbCl_(3)microcrystal.展开更多
Zinc oxide has a large energy gap and thus it has potential application in the field of solar cells by tuning the absorption of sunlight. In order to enhance its absorption of sunlight,dark color zinc oxides have been...Zinc oxide has a large energy gap and thus it has potential application in the field of solar cells by tuning the absorption of sunlight. In order to enhance its absorption of sunlight,dark color zinc oxides have been prepared by traditional hydrothermal method directly using a zinc foil as both source and substrate. We found that we could tune the optical properties of ZnO samples by changing the temperature. In particular, increasing temperature could significantly reduce the reflectivity of solar energy in the visible range. We speculate that the phenomenon is relevant to the sharp cone morphology of the ZnO nanorods grown on the surface of Zn foils, which furthermore enhance refraction and reflection of light in the nanorods. The capacity to improve the light absorption of ZnO may have a bright application in raising the efficiency of solar cells.展开更多
We present a theoretical calculation of the atomic and electronic structure of β-SiC and its non-polar (110) surface using the full potential linear augmented plane wave (FPLAPW) approach. The calculated lattice cons...We present a theoretical calculation of the atomic and electronic structure of β-SiC and its non-polar (110) surface using the full potential linear augmented plane wave (FPLAPW) approach. The calculated lattice constant and bulk modulus of p-SiC crystal are in excellent agreement with experimental data. The atomic and electronic structure of β-SiC(110) surface has been calculated by employing the slab and supercell model. It is found that the surface is characterized by a top-layer bond-length-contracting rotation relaxation in which the Si-surface atom moves closer towards the substrate while the C-surface atom moves outward. This relaxation is analogous to that of Ⅲ-Ⅴ semiconductor surface. The driving mechanism for this atomic rearrangement is that the Si atom tends to a planar sp2-like bonding situation with its three N neighbors and the N atom tends to a p3-like bonding with its three Si neighbors. Furthermore, surface relaxation induces the change from metallic to semiconducting展开更多
The growth of Gd film on Ni(110) surfaco was studied by synchrotron radiation photoemission spectroscopy and XPS techniques. It is revealed that in the coverage range of 0—0.22 nm Gd4f core level showed a single-peak...The growth of Gd film on Ni(110) surfaco was studied by synchrotron radiation photoemission spectroscopy and XPS techniques. It is revealed that in the coverage range of 0—0.22 nm Gd4f core level showed a single-peak structure, therefore Gd film grows over Ni(110) in the layer-by-layer mode. However, when Gd coverage was larger than 0.22, nm the Gd4f peak turned gradually into double-peak and a double-peak structure with 2.3 eV separation was formed at 1.51 nm, meanwhile similar phenomenon was observed in the Gd4d XPS spectra. It is suggested that the double-peak structure of Gd4f was derived from the growth of Gd film in cluster mode and the Gd atomic clusters may exhibit different electronic states from Gd metal owing to their special structures. The Gd4f double-peak evolved into a single-peak on annealing at 600 K, implying that Gd clusters are thermodynamically unstable.展开更多
The single crystalline nanostructure of organic semiconductors provides a very promising class of materials for applications in modern optoelectronic devices. However, morphology control and optoelectronic property mo...The single crystalline nanostructure of organic semiconductors provides a very promising class of materials for applications in modern optoelectronic devices. However, morphology control and optoelectronic property modulation of high quality single crystalline samples remain a challenge. Here, we report the morphology-controlled growth of single crystalline nanorod arrays of perylene- 3,4,9,10-tetracarboxylic dianhydride (IrFCDA). We demonstrate that, unlike FTCDA film, PTCDA nanorods exhibits optical waveguide features, enhanced absorption, and Frenkel excitation emission in the visible region. Additionally, we measured the electrical properties of PTCDA nanorods, including the conductivity along the growth direction of the nanorod, which is roughly 0.61 S-m i (much higher than that of pure crystalline PTCDA films).展开更多
基金supported by the National Natu-ral Science Foundation of China(No.11575187)the National Key Research and Development Program(No.2016YFB0700205).
文摘As a direct wide bandgap semiconductor,CsPbCl_(3)has great potential applications in the eld of near-ultraviolet photodetectors,lasers and higher-order multiphoton uores-cent detectors.In this work,we synthesized CsPbCl_(3)micro/nanocrystals by vapor depo-sition method with CsCl and PbCl_(2)powders as the source materials.It was con rmed that the formation of CsPbCl_(3)perovskite through the chemical reaction of CsCl with PbCl_(2)occurred in the quartz boat before the source evaporation,not in vapor or on sub-strate surface.The evaporated CsPbCl_(3)can form micro/nanocrystals on substrate surfaces under appropriate conditions.Various morphologies including irregular polyhedrons,rods and pyramids could be observed at lower temperature,while stable and uniform CsPbCl_(3)single crystal microplatelets were controllably synthesized at 450℃.Prolonging the growth time could modulate the size and density of the microcrystals,but could not change the morphology.Substrate types made little di erence to the morphology of CsPbCl_(3)crystals.The photoluminescence spectra indicated that the crystallinity and morphology of CsPbCl_(3)micro/nanocrystals have signi cant e ects on their optical properties.The work is expected to be helpful to the development of optoelectronic devices based on individual CsPbCl_(3)microcrystal.
基金supported by the National Natural Science Foundation of China(No.11575187)the National Key Research and Development Program(No.2016YFB0700205)
文摘Zinc oxide has a large energy gap and thus it has potential application in the field of solar cells by tuning the absorption of sunlight. In order to enhance its absorption of sunlight,dark color zinc oxides have been prepared by traditional hydrothermal method directly using a zinc foil as both source and substrate. We found that we could tune the optical properties of ZnO samples by changing the temperature. In particular, increasing temperature could significantly reduce the reflectivity of solar energy in the visible range. We speculate that the phenomenon is relevant to the sharp cone morphology of the ZnO nanorods grown on the surface of Zn foils, which furthermore enhance refraction and reflection of light in the nanorods. The capacity to improve the light absorption of ZnO may have a bright application in raising the efficiency of solar cells.
基金This work was supported by the National Natural Science Foundation of China (Grant No. 50132040)the High-level College Research Institution of the University of Science & Technology of China.
文摘We present a theoretical calculation of the atomic and electronic structure of β-SiC and its non-polar (110) surface using the full potential linear augmented plane wave (FPLAPW) approach. The calculated lattice constant and bulk modulus of p-SiC crystal are in excellent agreement with experimental data. The atomic and electronic structure of β-SiC(110) surface has been calculated by employing the slab and supercell model. It is found that the surface is characterized by a top-layer bond-length-contracting rotation relaxation in which the Si-surface atom moves closer towards the substrate while the C-surface atom moves outward. This relaxation is analogous to that of Ⅲ-Ⅴ semiconductor surface. The driving mechanism for this atomic rearrangement is that the Si atom tends to a planar sp2-like bonding situation with its three N neighbors and the N atom tends to a p3-like bonding with its three Si neighbors. Furthermore, surface relaxation induces the change from metallic to semiconducting
文摘The growth of Gd film on Ni(110) surfaco was studied by synchrotron radiation photoemission spectroscopy and XPS techniques. It is revealed that in the coverage range of 0—0.22 nm Gd4f core level showed a single-peak structure, therefore Gd film grows over Ni(110) in the layer-by-layer mode. However, when Gd coverage was larger than 0.22, nm the Gd4f peak turned gradually into double-peak and a double-peak structure with 2.3 eV separation was formed at 1.51 nm, meanwhile similar phenomenon was observed in the Gd4d XPS spectra. It is suggested that the double-peak structure of Gd4f was derived from the growth of Gd film in cluster mode and the Gd atomic clusters may exhibit different electronic states from Gd metal owing to their special structures. The Gd4f double-peak evolved into a single-peak on annealing at 600 K, implying that Gd clusters are thermodynamically unstable.
文摘The single crystalline nanostructure of organic semiconductors provides a very promising class of materials for applications in modern optoelectronic devices. However, morphology control and optoelectronic property modulation of high quality single crystalline samples remain a challenge. Here, we report the morphology-controlled growth of single crystalline nanorod arrays of perylene- 3,4,9,10-tetracarboxylic dianhydride (IrFCDA). We demonstrate that, unlike FTCDA film, PTCDA nanorods exhibits optical waveguide features, enhanced absorption, and Frenkel excitation emission in the visible region. Additionally, we measured the electrical properties of PTCDA nanorods, including the conductivity along the growth direction of the nanorod, which is roughly 0.61 S-m i (much higher than that of pure crystalline PTCDA films).