The Regulatory Role and Mechanism of Circadian Rhythm in Hemoglobin Co-cultured Neurovascular Unit

Objective Intracranial hemorrhage(ICH),the second most common subtype of stroke,exacerbates the disruption of the blood-brain barrier(BBB),leading to vasogenic edema,plasma protein extravasation,and infiltration of neurotoxic substances.The clearance capacity of the brain plays a crucial role in maintaining BBB homeostasis and facilitating patient recovery after hemorrhage.This study aimed to investigate the effect of circadian rhythms on BBB function,neuronal damage,and clearance capabilities.Methods The transwell model and hemoglobin were co-cultured to simulate the BBB environment after ICH.After intervention with different light groups,neuronal apoptosis was determined,glial phagocytosis was analyzed,the expression of endogenous clearing-related proteins aquaporin 4(AQP4)and low-density lipoprotein receptor-related protein 1(LRP1)was detected by western blotting and immunofluorescence dual standard method,and the expression of the tight junction protein occludin and melatonin receptor 1A(MTNR1A)was quantitatively analyzed.Results Circadian rhythms play a key role in maintaining the integrity of the BBB,reducing oxidative stress-induced neuronal damage,and improving microglial phagocytosis.Meanwhile,the expression of occludin and MTNR1A in neurovascular unit(NVU)co-cultured with hemoglobin improved the expression of AQP4 and LRP1,the key proteins in the NVU's endogenous brain clearance system.Conclusion Circadian rhythm(alternating black and white light)protects the NVU BBB function after ICH,promotes the expression of proteins related to the clearance of the hematoma,provides new evidence for the clinical treatment of patients recovering from ICH,and improves the circadian rhythm to promote brain metabolism and hematoma clearance.

The study of lithographic variation in resistive random access memory

Reducing the process variation is a significant concern for resistive random access memory(RRAM).Due to its ultrahigh integration density,RRAM arrays are prone to lithographic variation during the lithography process,introducing electrical variation among different RRAM devices.In this work,an optical physical verification methodology for the RRAM array is developed,and the effects of different layout parameters on important electrical characteristics are systematically investigated.The results indicate that the RRAM devices can be categorized into three clusters according to their locations and lithography environments.The read resistance is more sensitive to the locations in the array(~30%)than SET/RESET voltage(<10%).The increase in the RRAM device length and the application of the optical proximity correction technique can help to reduce the variation to less than 10%,whereas it reduces RRAM read resistance by 4×,resulting in a higher power and area consumption.As such,we provide design guidelines to minimize the electrical variation of RRAM arrays due to the lithography process.

Analytical Solutions for Free Vibration and Buckling of Composite Beams Using a Higher Order Beam Theory

To satisfy the interfacial shear force continuity conditions, a new model is proposed for the two-layer composite beam with partial interaction by modifying Reddy＇s higher order beam theory. The governing differential equations for free vibration and buckling are formulated using the Hamilton＇s principle, the natural frequencies and axial forces are thus analytically obtained by Laplace transform technique. The analytical results are verified through the comparison with those of several other models common in use; and the presented model is found to be a finer one than the Reddy＇s. A parametric study is also performed to investigate the effects of geometry and material parameters.

Identification Method for Single-line-to-ground Faults with Line Break Based on Phasor Measurement in Distribution Networks

The single-line-to-ground faults with line breaks(SLGFs-LBs)occur more and more frequently in distribution networks and can cause major safety accidents.It is difficult to distinguish the single-line-to-ground faults(SLGFs)in resonant grounding systems and ungrounding systems due to the same electrical characteristics on the source side and uncertain operation conditions of distribution networks.This paper proposes a method for distinguishing SLGFs-LBs and SLGFs.First,the source-side and load-side voltage characteristics of SLGFs and SLGFs-LBs are analyzed,and the phase difference between the voltages of the fault phase and non-fault phase on the load side is selected as the identification criterion.Phasor measurement units(PMUs)are selected as measuring devices.Then,the effects of operation conditions and external devices in distribution networks on the proposed method are discussed,and the phase errors caused by them are calculated to correct the identification method.Finally,the field testing and simulation experiments are conducted to verify the effectiveness and robustness of the proposed method.