An experimental study of leakage current is presented in a semi-insulating（SI） Ga As photoconductive semiconductor switch（PCSS） with voltages up to 5.8 kV（average field is 19.3 kV/cm）. The leakage current increa...An experimental study of leakage current is presented in a semi-insulating（SI） Ga As photoconductive semiconductor switch（PCSS） with voltages up to 5.8 kV（average field is 19.3 kV/cm）. The leakage current increases nonlinearly with the bias voltage increasing from 1.2×10^-9 A to 3.6×10^-5A. Furthermore, the dark resistance, which is characterized as a function of electric field, does not monotonically decrease with the field but displays several distinct regimes. By eliminating the field-dependent drift velocity, the free-electron density n is extracted from the current, and then the critical field for each region of n（E） characteristic of PCSS is obtained. It must be the electric field that provides the free electron with sufficient energy to activate the carrier in the trapped state via multiple physical mechanisms, such as impurity ionization, fielddependent EL2 capture, and impact ionization of donor centers EL10 and EL2. The critical fields calculated from the activation energy of these physical processes accord well with the experimental results. Moreover, agreement between the fitting curve and experimental data of J（E）, further confirms that the dark-state characteristics are related to these field-dependent processes. The effects of voltage on SI-Ga As PCSS may give us an insight into its physical mechanism.展开更多
By creating and analyzing two dimensional gas temperature and abundance maps of the RGH 80 compact galaxy group with high-quality Chandra data,we detect a high-abundance （ 0.7 Z⊙） arc,where the metal abundance is s...By creating and analyzing two dimensional gas temperature and abundance maps of the RGH 80 compact galaxy group with high-quality Chandra data,we detect a high-abundance （ 0.7 Z⊙） arc,where the metal abundance is significantly higher than the surrounding regions by 0.3Z⊙.This structure shows tight spatial correlations with the member galaxy PGC 046529,as well as with the arm-like feature identified on the X-ray image in the previous work of Randall et al.（2009）.Since no apparent signature of AGN activity is found to be associated with PGC 046529 in multi-band observations,and the gas temperature,metallicity,and mass of the high-abundance arc resemble those of the ISM of typical early-type galaxies,we conclude that this high-abundance structure is the remnant of the ISM of PGC 046529,which was stripped out of the galaxy by ram pressure stripping due to the motion of PGC 046529 in RGH 80.This novel case shows that ram pressure stripping can work as efficiently in the metal enrichment process in galaxy groups as it can in galaxy clusters.展开更多
基金supported by the National Natural Science Foundation of China(Grant No.31470822)the Advanced Research Foundation of China(Grant Nos.9140A05030114DZ02068,9140A07030514DZ02101,and 9140A07010715DZ02001)
文摘An experimental study of leakage current is presented in a semi-insulating（SI） Ga As photoconductive semiconductor switch（PCSS） with voltages up to 5.8 kV（average field is 19.3 kV/cm）. The leakage current increases nonlinearly with the bias voltage increasing from 1.2×10^-9 A to 3.6×10^-5A. Furthermore, the dark resistance, which is characterized as a function of electric field, does not monotonically decrease with the field but displays several distinct regimes. By eliminating the field-dependent drift velocity, the free-electron density n is extracted from the current, and then the critical field for each region of n（E） characteristic of PCSS is obtained. It must be the electric field that provides the free electron with sufficient energy to activate the carrier in the trapped state via multiple physical mechanisms, such as impurity ionization, fielddependent EL2 capture, and impact ionization of donor centers EL10 and EL2. The critical fields calculated from the activation energy of these physical processes accord well with the experimental results. Moreover, agreement between the fitting curve and experimental data of J（E）, further confirms that the dark-state characteristics are related to these field-dependent processes. The effects of voltage on SI-Ga As PCSS may give us an insight into its physical mechanism.
基金supported by the National Natural Science Foundation of China (Grant Nos. 10673008,10878001 and 10973010)the Ministry of Science and Technology of China (Grant No. 2009CB824900/2009CB24904)the Ministry of Education of China (the NCET Program)
文摘By creating and analyzing two dimensional gas temperature and abundance maps of the RGH 80 compact galaxy group with high-quality Chandra data,we detect a high-abundance （ 0.7 Z⊙） arc,where the metal abundance is significantly higher than the surrounding regions by 0.3Z⊙.This structure shows tight spatial correlations with the member galaxy PGC 046529,as well as with the arm-like feature identified on the X-ray image in the previous work of Randall et al.（2009）.Since no apparent signature of AGN activity is found to be associated with PGC 046529 in multi-band observations,and the gas temperature,metallicity,and mass of the high-abundance arc resemble those of the ISM of typical early-type galaxies,we conclude that this high-abundance structure is the remnant of the ISM of PGC 046529,which was stripped out of the galaxy by ram pressure stripping due to the motion of PGC 046529 in RGH 80.This novel case shows that ram pressure stripping can work as efficiently in the metal enrichment process in galaxy groups as it can in galaxy clusters.
