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Anisotropic s-Wave Gap in the Vicinity of a Quantum Critical Point in Superconducting BaFe_(2)(As_(1-x)P_(x))_(2) Single Crystals:A Study of Point-Contact Spectroscopy
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作者 詹红星 林玉尺 +8 位作者 赵宇清 左海艳 王兴玉 马肖燕 李春红 罗会仟 陈根富 李世亮 任聪 《Chinese Physics Letters》 SCIE EI CAS CSCD 2024年第4期118-123,共6页
We report on soft c-axis point-contact Andreev reflection(PCAR)spectroscopy combining with resistivity measurements on BaFe_(2)(As_(0.7)P_(0.3))_(2),to elucidate the superconducting gap structure in the vicinity of th... We report on soft c-axis point-contact Andreev reflection(PCAR)spectroscopy combining with resistivity measurements on BaFe_(2)(As_(0.7)P_(0.3))_(2),to elucidate the superconducting gap structure in the vicinity of the quantum critical point.A double peak at the gap edge plus a dip feature at zero-bias has been observed on the PCAR spectra,indicative of the presence of a nodeless gap in BaFe_(2)(As_(0.7)P_(0.3))_(2).Detailed analysis within a sophisticated theoretical model reveals an anisotropic gap with deep gap minima.The PCARs also feature additional structures related to the electron-bosonic coupling mode.Using the extracted superconducting energy gap value,a characteristic bosonic energy Ω_(b) and its temperature dependence are obtained,comparable with the spin-resonance energy observed in neutron scattering experiment.These results indicate a magnetism-driven quantum critical point in the BaFe_(2)(As_(1-x)P_(x))_(2) system. 展开更多
关键词 quantum critical RESISTIVITY
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Tunneling Barrier Thickness Dependence of Spin Polarization of Ferromagnet in Magnetic Tunnel Junctions
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作者 Yu-Qing Zhao hai-yan zuo +5 位作者 Shao-Wei Li Ke Xia Ming Wen Jun-Mei Guo Peng Xiong Cong Ren 《Chinese Physics Letters》 SCIE EI CAS CSCD 2024年第11期93-98,共6页
For designing low-impedance magnetic tunnel junctions(MTJs),it has been found that tunneling magnetoresistance strongly correlates with the insulating barrier thickness,imposing a fundamental problem about the relatio... For designing low-impedance magnetic tunnel junctions(MTJs),it has been found that tunneling magnetoresistance strongly correlates with the insulating barrier thickness,imposing a fundamental problem about the relationship between spin polarization of ferromagnet and the insulating barrier thickness in MTJs.Here,we investigate the influence of alumina barrier thickness on tunneling spin polarization(TSP)through a combination of theoretical calculations and experimental verification.Our simulating results reveal a significant impact of barrier thickness on TSP,exhibiting an oscillating decay of TSP with the barrier layer thinning.Experimental verification is realized on FeNi/AlO_(x)/Al superconducting tunnel junctions to directly probe the spin polarization of FeNi ferromagnet using Zeeman-split tunneling spectroscopy technique.These findings provide valuable insights for designs of high-performance spintronic devices,particularly in applications such as magnetic random access memories,where precise control over the insulating barrier layer is crucial. 展开更多
关键词 technique. TUNNELING POLARIZATION
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